Journal of Materiomics最新文献

{"title":"Flexible ZrO2/ZrB2/C nanofiber felt with enhanced microwave absorption and ultralow thermal conductivity","authors":"Chengwan Yang, Kewei Li, Mengen Hu, Xinyang Li, Ming Li, Xiaoye Hu, Yue Li, Zhulin Huang, Guowen Meng","doi":"10.1016/j.jmat.2024.100988","DOIUrl":"https://doi.org/10.1016/j.jmat.2024.100988","url":null,"abstract":"Carbon-based materials, renowned for their low density, adjustable electrical conductivity, superior corrosion resistance and mechanical properties, and have found extensive applications in the field of electromagnetic wave absorption (EMWA). Despite their merits, the current EMWA and thermal insulation capabilities are not fully optimized, thereby restricting their applications in the aerospace sector. Herein, we introduce a combinatory methodology employing electrospinning followed by pyrolysis to <em>in-situ</em> integrate ZrO₂ and ZrB₂ nanoparticles onto the surface of carbon nanofibers, culminating in a flexible ZrO₂/ZrB₂/C nanofiber felt. The integration of ZrO₂ and ZrB₂ nanoparticles significantly augments impedance matching and promotes multifaceted scattering and interfacial polarization. Consequently, the ZrO₂/ZrB₂/C nanofiber felt demonstrates a minimum reflection loss (RL_min) of –54 dB and the effective absorption bandwidth (EAB, RL≤–10 dB) is 3.1 GHz. Moreover, the three-dimensional porous architecture and the presence of multiple heterogeneous interfaces endow the ZrO₂/ZrB₂/C nanofiber felt with an ultralow thermal conductivity of 0.016 W⸱m⁻¹⸱K⁻¹ at 1100 °C, underscoring its exceptional potential for infrared stealth. This work shows considerable guiding significance for the design of bi-functional EMWA materials with ultralow thermal conductivity in aerospace field.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"8 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2024-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142782493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MgIn2S4/COF S-scheme heterostructure for improved photocatalytic H2O2 production under pure water and air","authors":"Yong Zhang, Youjun Wang, Yuchen Liu, Shumin Zhang, Yanyan Zhao, Jianjun Zhang","doi":"10.1016/j.jmat.2024.100985","DOIUrl":"https://doi.org/10.1016/j.jmat.2024.100985","url":null,"abstract":"Photocatalytic H₂O₂ production from O₂ and H₂O is an economical and environmentally sustainable approach. However, the reliance on sacrificial agents and pure O₂ greatly limits the practical application of numerous photocatalysts. Herein, a novel S-scheme photocatalyst composed of MgIn₂S₄ and covalent organic framework (COF) was developed toward efficient photocatalytic H₂O₂ evolution under pure water and air. MgIn₂S₄/COF (MC) S-scheme heterojunction was constructed by decorating MgIn₂S₄ nanosheets on hollow spherical COF using wet chemistry. The H₂O₂ yield of the optimal MC composite in pure water and air was 4.52 mmol⸱g⁻¹⸱h⁻¹ under pure water and air, which was separately 6.6 times and 9.4 times higher than that of pristine MgIn₂S₄ and COF. Photocatalytic mechanism characterizations confirmed that the continuous 2e⁻ O₂ reduction and 4e⁻ H₂O oxidation simultaneously occurred within this reaction system, and both ·O₂^– and e^– were pivotal intermediates for H₂O₂ evolution. The MC S-scheme heterojunction was advantageous to the effective separation and transfer of photogenerated electrons and holes, thereby enhancing the photocatalytic H₂O₂ production activity. This work offers important guidance for constructing high-efficiency COFs-based S-scheme heterojunction for H₂O₂ production.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"4 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142782577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Magnetic proximity effect and tunable valley splitting in 2D CrGeTe3/MTe2 (M = Mo, W) van der Waals heterostructures","authors":"Wenli Zhang, Jing Wang, Tiantian Zhang, Bin Shao, Xu Zuo","doi":"10.1016/j.jmat.2024.100986","DOIUrl":"https://doi.org/10.1016/j.jmat.2024.100986","url":null,"abstract":"Proximity-induced magnetic exchange interactions offer a novel approach to manipulate the valley degree of freedom (DOF) in nonmagnetic monolayers without external magnetic fields. Transition metal dichalcogenides (TMDs) serve as an ideal platform for valleytronics research. Here, by introducing a two-dimensional (2D) magnetic substrate, chromium germanium telluride (CrGeTe₃), we demonstrate effective control over the spin and valley properties of CrGeTe₃/MTe₂ (M = Mo, W) van der Waals (vdW) heterostructures. Our first-principles calculations and <span><span style=\"\"></span><span data-mathml='&lt;math xmlns=\"http://www.w3.org/1998/Math/MathML\" /&gt;' role=\"presentation\" style=\"font-size: 90%; display: inline-block; position: relative;\" tabindex=\"0\"><svg aria-hidden=\"true\" focusable=\"false\" height=\"0.24ex\" role=\"img\" style=\"vertical-align: -0.12ex;\" viewbox=\"0 -51.7 0 103.4\" width=\"0\" xmlns:xlink=\"http://www.w3.org/1999/xlink\"><g fill=\"currentColor\" stroke=\"currentColor\" stroke-width=\"0\" transform=\"matrix(1 0 0 -1 0 0)\"></g></svg><span role=\"presentation\"><math xmlns=\"http://www.w3.org/1998/Math/MathML\"></math></span></span><script type=\"math/mml\"><math></math></script></span> model Hamiltonian analysis reveal that the magnetic proximity effect (MPE) induces valley splitting and polarization in monolayer MoTe₂ and WTe₂ through the synergistic action of spin-orbit coupling (SOC) and proximity exchange interactions. Further investigation shows that valley splitting in these heterostructures is highly sensitive to the overlap between the atomic projection positions of TMDs and the magnetic Cr atoms, and can be continuously adjusted by varying the magnetization of CrGeTe₃. Additionally, normal strain and experimentally accessible electric fields can effectively modulate the proximity exchange coupling, thus enabling extensive tunability of valley splitting. These controllable manipulations of the valley DOF through external stimuli mark a significant advancement in valleytronics, paving the way for next-generation electronic devices with enhanced performance and novel functionalities.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"32 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142763446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-high energy storage density and efficiency at low electric fields/voltages in dielectric thin film capacitors through synergistic effects","authors":"Jamal Belhadi, Zouhair Hanani, Nick A. Shepelin, Urška Trstenjak, Nina Daneu, Arnold M. Müller, Christof Vockenhuber, Bojan Ambrožič, Vid Bobnar, Gertjan Koster, Mimoun El Marssi, Thomas Lippert, Matjaž Spreitzer","doi":"10.1016/j.jmat.2024.100980","DOIUrl":"https://doi.org/10.1016/j.jmat.2024.100980","url":null,"abstract":"Ensuring reliable and safe operation of high-power electronic devices necessitates the development of high-quality dielectric nano-capacitors with high recoverable energy density (<em>U</em>_Rec) and efficiency (<em>η</em>) at low applied electric fields (<em>E</em>)/voltages. In this work, we demonstrate ultra-high <em>U</em>_Rec and η at low <em>E</em> &lt;500 kV/cm in as-grown epitaxial relaxor ferroelectric (RFE) PMN-33PT films, rivaling those typically achieved in state-of-the-art RFE and antiferroelectric (AFE) materials. The high energy storage properties were achieved using a synergistic strategy involving large polarization, a giant built-in potential/imprint (five times higher than the coercive field), and AFE like behavior. The structural, chemical, and electrical investigations revealed that these achievements mainly arise from the effects of strain, dipole defects, and chemical composition. For instance, at low E, the capacitors exhibit under 160 kV/cm (<em>i.e.</em>, 8V) and 400 kV/cm (<em>i.e.</em>, 20V), respectively, an ultra- high Δ<em>P</em> (45 μC/cm² and 60 μC/cm²), <em>U</em>_E= <em>U</em>_Rec /<em>E</em> (21 J⸱MV/cm² and 17 J⸱MV/cm²), and <em>U</em>_F=<em>U</em>_Rec/(1–η) (20 J/cm³ and 47 J/cm³) with a robust charge-discharge fatigue endurance and outstanding frequency and thermal stability. Additionally, the designed films exhibit outstanding energy storage performance at higher <em>E</em> up to 2 MV/cm (Δ<em>P</em> ≈ 78 μC/cm², <em>U</em>_E≈ 17.3 J⸱MV/cm² and <em>U</em>_F≈ 288 J/cm³) due to their low leakage current density.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"76 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142756331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SnO2–SnS2/graphene heterojunction composite promotes high-performance sodium ion storage","authors":"Yuanyuan Ma, Ke Ping, Peng Sun, Kaibin Lin, Junjie Guo, Lu Yue, Wenhui Zhang, Xiangwei Wu, Zhaoyin Wen","doi":"10.1016/j.jmat.2024.100983","DOIUrl":"https://doi.org/10.1016/j.jmat.2024.100983","url":null,"abstract":"The design of electrode material nanostructures including reducing material sizes and designing appropriate heterostructures, has great potential in improving charge storage dynamics and enhancing practical performance. In this study, we present the innovative synthesis of SnO₂-SnS₂/graphene heterojunction composite materials via a controlled vulcanization reaction process. The unique structure endows the composite with high electronic conductivity, rapid ion diffusion rates, elevated electrochemical activity, excellent structural stability, and abundant reaction sites, making it a highly efficient anode material for sodium-ion batteries (SIBs). Half-cell tests demonstrate that the SnO₂–SnS₂/r–G composite achieves a first Coulombic efficiency of 77.3% at a high current density of 5 A/g, showing remarkable cycling stability. Remarkably, the composite retains a reversible capacity of 330 mA·h/g after 1000 cycles, with a capacity retention rate of 77.5%. Moreover, we elucidate the specific sodium storage mechanisms of the heterojunction composite electrode <em>via in-situ</em> and <em>ex-situ</em> characterization methods. Furthermore, a full battery utilizing Na_0.53MnO₂ as the cathode and SnO₂–SnS₂/r–G composite as the anode exhibits outstanding rate performance and long-term cycling stability. This method of heterostructure design and fabrication, coupled with the exceptional performance metrics, suggests that the SnO₂–SnS₂/r–G heterostructure is a promising candidate for advanced anode materials in SIBs applications.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"5 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Defect engineering induced phase competition in BNT-based relaxor ferroelectrics for dielectric energy storage","authors":"Dong-Xu Li, Zhipeng Li, Zong-Yang Shen, Xuhai Shi, Xiaojun Zeng, You Zhang, Wenqin Luo, Fusheng Song, Chao-Feng Wu","doi":"10.1016/j.jmat.2024.100979","DOIUrl":"https://doi.org/10.1016/j.jmat.2024.100979","url":null,"abstract":"Dielectric capacitors are independent in advanced electronics and pulse power systems as an energy storage and conversion medium. However, achieving high energy density at a low electric field remains challenging for dielectric materials to improve the safety of integrated electronic devices. In this work, the strategy of defect engineering-induced phase competition is proposed to improve the polarization behavior and strengthen dielectric temperature stability of (Bi,Na)TiO₃ (BNT)-based relaxor ferroelectric, <em>i.e.</em>, Na_0.325Sr_0.245Ba_{0.105–1.5<em>x</em>}□_{0.5<em>x</em>}Bi_{0.325+<em>x</em>}TiO₃ (NSB_{0.105–1.5<em>x</em>}□_{0.5<em>x</em>}B_{0.325+<em>x</em>}T) ceramics by changing the ratio of Bi³⁺/Ba²⁺. A high recoverable energy density (<em>W</em>_rec=3.6 J/cm³) is achieved at a relatively low electric field of 160 kV/cm for <em>x</em>=0.06 composition together with a high dielectric constant of 3142±15% in a wide temperature range of 30–386 °C, which exceeds other lead-free dielectric ceramics at the same electric field. The results demonstrate that NSB_0.015□_0.03B_0.385T ceramics are desirable for advanced pulsed power capacitors and will push the development of defect-tuned functionality of dielectric ceramics for energy storage applications.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"25 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142742458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High entropy engineering boosts thermo-mechanical properties of rare-earth tantalates: Influences of cocktail effects","authors":"Luyang Zhang, Lin Chen, Jiankun Wang, Yuxuan Zhang, Yanhui Chu, Jing Feng","doi":"10.1016/j.jmat.2024.100984","DOIUrl":"https://doi.org/10.1016/j.jmat.2024.100984","url":null,"abstract":"High entropy engineering has been widely used to optimize properties of various materials, and we improve comprehensive performance of rare-earth tantalates RETaO₄ (RE is rare earth) by changing configurational entropy in this work. Four medium/high entropy RETaO₄ (M/HERT) are successfully prepared, and the variations of disorders and distortion degree of lattices with the increasing configurational entropy are described in detail. It is revealed that M/HERT with the highest configurational entropy does not correspond to the best comprehensive properties. Unexpected variations in properties of M/HERT compared to RETaO₄ are observed. By comparing with values obtained from rule of mixture (ROM), it is believed that the cocktail effect exists in M/HERT. The synergistic optimizations of thermo-mechanical properties are realized, including reducing thermal conductivity, increasing thermal expansion coefficients (TECs), and enhancing mechanical properties. M/HERT exhibit excellent high temperature stability and provide a good thermal insulation gradient, which is significant for high-temperature applications of RETaO₄. This work serves as an important part for thermal barrier coatings materials with high working temperatures and low thermal conductivity.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"26 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142742716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"(001) β-Ga2O3 homoepitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD","authors":"Yunlong He, Yang Liu, Xiaoli Lu, Zhan Wang, Xianqiang Song, Ying Zhou, Xuefeng Zheng, Xiaohua Ma, Yue Hao","doi":"10.1016/j.jmat.2024.100981","DOIUrl":"https://doi.org/10.1016/j.jmat.2024.100981","url":null,"abstract":"In this paper, to overcome the issues of high roughness and defect density in (001) β-Ga₂O₃ homoepitaxial films grown by MOCVD, a novel in-situ pulsed Al atom assisted growth method is proposed. Compared to films grown by conventional growth methods, the β-Ga₂O₃ epitaxial film grown using this method exhibited lower RMS roughness and a smaller FWHM of the (002) peak in the X-ray rocking curve. Additionally, oxygen vacancy defects within the film are significantly reduced, and Al incorporation is relatively limited without inducing lattice distortion. The width of serrations at the substrate-epitaxial layer interface is reduced from 70 nm to 17 nm, demonstrating improved interface flatness. The mechanism of pulsed Al atoms in optimizing homoepitaxial growth of (001) β-Ga₂O₃ is proposed, including their roles as preferential nucleation sites for Ga atoms, their inhibitory effects on Ga₂O formation and desorption, and the enhancement of atomic diffusion while minimizing parasitic side reactions. The phenomenon of epitaxial orientation rotation is observed, and a hypothesis is proposed regarding the causes of the difference in rotation angle and surface flatness. Additionally, Schottky barrier diodes (SBDs) are also fabricated to study the electrical properties of these epitaxial materials. The epitaxial layer obtained through the pulsed Al atom assisted growth method exhibited a breakdown field strength of 1.8 MV/cm. These results demonstrate that the pulsed Al atom assisted growth method may serve as a valuable reference for achieving high-quality (001) β-Ga₂O₃ epitaxial growth by the MOCVD method.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"72 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142742713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic effects lead to high thermoelectric performance of iodine doped pseudo-binary layered GeSb2Te4","authors":"Yongjin Chen, Hong Wu, Guang Han, Bin Zhang, Xu Lu, Wenge Yang, Guoyu Wang, Xiaodong Han, Xiaoyuan Zhou","doi":"10.1016/j.jmat.2024.100973","DOIUrl":"https://doi.org/10.1016/j.jmat.2024.100973","url":null,"abstract":"Pseudo-binary layered compound ⅣVI-V₂VI₃ families show great promise for application in thermoelectrics. Herein, through introducing iodine in GeSb₂Te₄, several synergistic effects come into being and contribute to outstanding thermoelectric performance. The I^Te donor-like defects suppress the hole carrier concentration from 5.72 × 10²⁰ cm^–3 to 2.80 × 10²⁰ cm^–3. First-principles calculations reveal that iodine doping increases the band gap from 0.253 eV to 0.302 eV and contributes to valence band convergence. Seebeck coefficient value reaches up to 135.7 μV/K at 773 K, and the power factor values are entirely boosted in the whole temperature region, reaching a maximum value of 12.4 μW⸱cm^–1⸱K^–2 in GeSb₂Te_3.96I_0.04. Moreover, iodine doping simultaneously reduces the lattice and electronic thermal conductivity, leading to the greatly reduced total thermal conductivity from 2.89 W⸱m^–1⸱K^–1 in pristine sample to 0.89 W⸱m^–1⸱K^–1 in GeSb₂Te_3.84I_0.16 at 323 K. Finally, a maximum <em>zT</em> ∼ 1.12 at 773 K and an average <em>zT</em> ∼ 0.62 over 323–773 K are achieved in GeSb₂Te_3.88I_0.12. This work puts forward an effective strategy to synergistically optimize phonon and carrier transport properties of pseudo-binary compounds through halogen doping, which may be effective in other similar material systems.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"23 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142684805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Convenient synthesis of hollow tubular In2O3/PDA S-scheme inorganic/organic heterojunction photocatalyst for H2O2 production and its mechanism","authors":"Yunhao Ma, Shan Wang, Yingjie Zhang, Bei Cheng, Liuyang Zhang","doi":"10.1016/j.jmat.2024.100978","DOIUrl":"https://doi.org/10.1016/j.jmat.2024.100978","url":null,"abstract":"The development of heterojunction photocatalysts for hydrogen peroxide (H₂O₂) generation is both environmentally sustainable and cost-effective but presents considerable challenges. In this study, we synthesized hollow tubular indium oxide (In₂O₃) by calcining In-MIL-68 and subsequently composited it with polydopamine (PDA) <em>via in-situ</em> self-polymerization. This process resulted in the formation of an In₂O₃/PDA step-scheme (S-scheme) heterojunction. The optimized sample demonstrated H₂O₂ production rates approximately 2.1 and 4.5 times higher than the pure In₂O₃ and PDA, respectively. The enhanced photocatalytic performance of the In₂O₃/PDA composite is the result of several synergistic factors: increased light absorption due to the hollow structure, a larger specific surface area, and high separation efficiency of photo-generated electron-hole pairs facilitated by the S-scheme heterojunction. <em>In-situ</em> irradiated X-ray photoelectron spectroscopy (ISI-XPS) confirmed the charge transfer pathway follows the S-scheme mechanism. This work not only highlights a practical method for constructing inorganic/organic S-scheme heterojunction photocatalysts but also provides a detailed analysis of their underlying mechanisms, paving the way for more efficient and sustainable photocatalytic systems.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"17 1","pages":""},"PeriodicalIF":9.4,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142684746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}