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Simulation of Porous Layer Sintering During High-Temperature Annealing 高温退火过程中多孔层烧结的模拟
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.230303
T. B. Govorukha, N. Shwartz, Z. Yanovitskaja, A. V. Zverev
{"title":"Simulation of Porous Layer Sintering During High-Temperature Annealing","authors":"T. B. Govorukha, N. Shwartz, Z. Yanovitskaja, A. V. Zverev","doi":"10.1109/SIBEDM.2006.230303","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.230303","url":null,"abstract":"Kinetic of porous layers transformation during annealing was investigated using Monte Carlo simulation. Model with primitive cubic lattice was used for calculations. Time dependence of film evolution rate at initial stage of annealing process was demonstrated to be power type: ~t-γ (1/5 < γ <1/3). At any porosity film thickness decreases in discrete steps during annealing. The discontinuous change of film thickness takes place when portion of pores simultaneously comes out from the bulk to the surface. Thickness change is about average pore size, and periods between sudden thickness changes far exceed duration of film thickness jumps.","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128576059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reconstruction Phase Transition γ(2×4) <-> c(4×4) on (001) GaAs Surface (001) GaAs表面重建相变γ(2×4) c(4×4
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.230302
D. Dmitriev
{"title":"Reconstruction Phase Transition γ(2×4) <-> c(4×4) on (001) GaAs Surface","authors":"D. Dmitriev","doi":"10.1109/SIBEDM.2006.230302","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.230302","url":null,"abstract":"In present study MBE equipment /spl Lt/Riber-32P/spl Gt/ with solid state sources of materials was used. The RHEED system was applied to get the diffraction patterns on reflection. The RHEED patterns changing let us determine surface reconstruction and sharply tracking reconstructional transitions. The [001] GaAs substrates with dimensional 3/spl times/3 mm/sup 2/ were used. That geometry of samples let reach the high accuracy as assigned in investigated parameters. The elections of conditions of experiment were done in connection with the fact of homoepitaxy on [001] GaAs surface from As/sub 4/ and Ga beam is the modeling system in A/sup 3/B/sup 5/ compound epitaxy. The reconstruction /spl gamma/(2/spl times/4) and c(4/spl times/4) on the [001]GaAs surface is the well example of ordered and disordered structure.","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133978572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanotubes - the Future of Television 纳米管——电视的未来
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.231993
M. E. Shmakova, S. Kalinin
{"title":"Nanotubes - the Future of Television","authors":"M. E. Shmakova, S. Kalinin","doi":"10.1109/SIBEDM.2006.231993","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.231993","url":null,"abstract":"Construction and principles of nanotube display operation are considered in this paper. Performance attributes of such emitting cathodes and displays, produced on basis of them, are analyzed","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"68 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125380838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Perspective Structures for Microwave Heterotransistors for Communication Techniques 用于通信技术的微波异质晶体管透视结构
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.231995
Vitaliy G. Mashkantsev, Sergey Kalinin
{"title":"The Perspective Structures for Microwave Heterotransistors for Communication Techniques","authors":"Vitaliy G. Mashkantsev, Sergey Kalinin","doi":"10.1109/SIBEDM.2006.231995","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.231995","url":null,"abstract":"This information contains the main elementary base of nanoheterostructural electronics, which combines high electron mobility transistors (HEMT), heterojunction bipolar transistors (HBT) and GaN transistors","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"27 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120974153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Kinetics of Photoluminescence of Two-Dimensionally Electron Gas in AlGaN/GaN Heterostructure 二维电子气体在AlGaN/GaN异质结构中的光致发光动力学
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.230310
N. S. Korzhavina, T. Shamirzaev, V. Mansurov, K. Zhuravlev
{"title":"Kinetics of Photoluminescence of Two-Dimensionally Electron Gas in AlGaN/GaN Heterostructure","authors":"N. S. Korzhavina, T. Shamirzaev, V. Mansurov, K. Zhuravlev","doi":"10.1109/SIBEDM.2006.230310","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.230310","url":null,"abstract":"In this work statistician photoluminescence and photoluminescence kinetics of two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure has been studied. 2DEG was formed at GaN/AlGaN heterostructure by doping of AlGaN layer. Two lines present in a low temperature (4,2K) PL spectrum of the GaN/AlGaN structure: a line A results from excitonic recombination in GaN and a line B is due to recombination of electron of 2DEG. Transient PL spectra of the structure demonstrate that the line A decay time is shorter than 10-8 sec, while the line B demonstrates a nonexponential decay with duration of several tens of microseconds and a red shift with time after excitation pulse. The experimental results were explained in framework of a model of special separation of two-dimensional electrons and holes localized at acceptors","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115273953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Researching of Ultrasonic Influence to Sterilization and Plants Cells Growth of Culture in Vitro 超声波对植物离体培养灭菌及细胞生长影响的研究
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.231657
M. E. Lamberova, A. N. Khmeleva, I. S. Emelianova, A. A. Lamberova, A.S. Kosolapova
{"title":"Researching of Ultrasonic Influence to Sterilization and Plants Cells Growth of Culture in Vitro","authors":"M. E. Lamberova, A. N. Khmeleva, I. S. Emelianova, A. A. Lamberova, A.S. Kosolapova","doi":"10.1109/SIBEDM.2006.231657","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.231657","url":null,"abstract":"For the explants from a roots, stems and leafs of potatoes has sort named Lugovskoy, soy has sort named as Altom and buckwheat has sort Natasha, that had been zoned for Alaty region (Russia) by means of leading into culture a cells and a tissues and its further reproduction, it have been for the first time confirmed that ultrasonic intensify sterilizing action of chemical reagents to isolated vegetable tissues and provides stimulant force to callusforming and further grow of cells biomass. Ultrasonic action occurs in conditions of absence of contact between explants and cavitation bubbles through agarized medium, sides of glass bottles and water medium around of bottles","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128245710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Specialized Meter of Parameters of Ultrasonic Oscillation Systems 超声振荡系统参数专用仪表
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.230971
V. Khmelev, D. V. Genne, R. Barsukov
{"title":"Specialized Meter of Parameters of Ultrasonic Oscillation Systems","authors":"V. Khmelev, D. V. Genne, R. Barsukov","doi":"10.1109/SIBEDM.2006.230971","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.230971","url":null,"abstract":"The article is devoted to a problem of definition of characteristics ultrasonic piezoelectric oscillatory systems. The developed device intended for the solution test of ultrasonic piezoelectric oscillatory systems is presented","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132118658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical Basics of Adult Vocational Training by Means of Distance Learning Technologies 成人职业培训远程学习技术的理论基础
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.230961
E. A. Terentyeva
{"title":"Theoretical Basics of Adult Vocational Training by Means of Distance Learning Technologies","authors":"E. A. Terentyeva","doi":"10.1109/SIBEDM.2006.230961","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.230961","url":null,"abstract":"The theoretical aspects of distance learning (DL) system design are considered in the given paper. The paper defines the place of DL in the system of continuous vocational training, features particular qualities of the training process based on the andragogic training model, and necessary conditions for a successful realization of the distance learning system in the Russian higher educational institutions","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130839708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Marketing Analysis of the Internet-Education in Telecommunication Field 电信领域网络教育的营销分析
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.230965
E. Strukova, B. Krouk
{"title":"The Marketing Analysis of the Internet-Education in Telecommunication Field","authors":"E. Strukova, B. Krouk","doi":"10.1109/SIBEDM.2006.230965","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.230965","url":null,"abstract":"This paper is devoted to the analysis of the market of the Internet-education consumers. On the basis of the database classification the students of distance learning have been segmented by geographical, socially-demographic criteria, and also market segmentation by telecommunication enterprises, has been made. By results of carried out research prospects of development of the considered segments of the market have been defined in the accordance with the results of the research carried out","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"24 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132845968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Modern Technology for Silicon NanoFET 硅纳米效应晶体管的现代技术
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.231996
T. V. Lobanova, Y.I. Vorontsov, S. Kalinin
{"title":"The Modern Technology for Silicon NanoFET","authors":"T. V. Lobanova, Y.I. Vorontsov, S. Kalinin","doi":"10.1109/SIBEDM.2006.231996","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.231996","url":null,"abstract":"Under consideration are the technological peculiarities of the production and construction of modern field silicon nanotransistors (FSNT), including teracycle transistors (TCT), their performance capabilities and limit properties are analyzed","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114110612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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