{"title":"用于通信技术的微波异质晶体管透视结构","authors":"Vitaliy G. Mashkantsev, Sergey Kalinin","doi":"10.1109/SIBEDM.2006.231995","DOIUrl":null,"url":null,"abstract":"This information contains the main elementary base of nanoheterostructural electronics, which combines high electron mobility transistors (HEMT), heterojunction bipolar transistors (HBT) and GaN transistors","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"27 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The Perspective Structures for Microwave Heterotransistors for Communication Techniques\",\"authors\":\"Vitaliy G. Mashkantsev, Sergey Kalinin\",\"doi\":\"10.1109/SIBEDM.2006.231995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This information contains the main elementary base of nanoheterostructural electronics, which combines high electron mobility transistors (HEMT), heterojunction bipolar transistors (HBT) and GaN transistors\",\"PeriodicalId\":151587,\"journal\":{\"name\":\"International Workshops and Tutorials on Electron Devices and Materials\",\"volume\":\"27 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Workshops and Tutorials on Electron Devices and Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBEDM.2006.231995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshops and Tutorials on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2006.231995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Perspective Structures for Microwave Heterotransistors for Communication Techniques
This information contains the main elementary base of nanoheterostructural electronics, which combines high electron mobility transistors (HEMT), heterojunction bipolar transistors (HBT) and GaN transistors