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Radiation Defects in the Light - Emitting Silicon Nanocrystals 发光硅纳米晶体的辐射缺陷
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-09-11 DOI: 10.1109/SIBEDM.2006.230308
T. Korchagina, S. Cherkova, G. Kachurin
{"title":"Radiation Defects in the Light - Emitting Silicon Nanocrystals","authors":"T. Korchagina, S. Cherkova, G. Kachurin","doi":"10.1109/SIBEDM.2006.230308","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.230308","url":null,"abstract":"The influence of an ion irradiation on the properties of light-emitting silicon NC has been examined in conditions when accelerated ions F passed the studied layer through. For introduction of radiation defects in NC the layers were irradiated with 200 keV F/sup +/ ions within the dose range of 10/sup 12/-10/sup 14/ cm/sup -2/. The samples were characterized by PL, and their structural properties - by HREM and Raman spectroscopy. It is shown, that for PL quenching there is enough to create in NC individual displacements (1-5 displacement/NC). However NC retain crystal structure even at the doses exceeding the doses of PL quenching for about an order (up to 50 displacement/NC). At such doses the electron microscopy reveals in NC a heavily damaged lattice.","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121389461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-equilibrium Charge Carriers Life Times in Semi-Insulating GaAs Compensated with Chromium 铬补偿半绝缘砷化镓中非平衡载流子寿命
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-09-11 DOI: 10.1109/SIBEDM.2006.231988
A. Zarubin, D. Mokeev, L. Okaevich, A. Tyazhev, M. Bimatov, M. Lelekov, I. Ponomarev
{"title":"Non-equilibrium Charge Carriers Life Times in Semi-Insulating GaAs Compensated with Chromium","authors":"A. Zarubin, D. Mokeev, L. Okaevich, A. Tyazhev, M. Bimatov, M. Lelekov, I. Ponomarev","doi":"10.1109/SIBEDM.2006.231988","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.231988","url":null,"abstract":"In activity the observed data of a life time of non-equilibrium charge carriers in detectors based on GaAs, compensated with Cr are shown On the basis of the analysis of experimental data is established, that in electrical fields with strength in range from 1 to 10 kV/s the values of non-equilibrium electrons and holes life times do not depend on electric field strength It is shown, that using of two miscellaneous techniques results in considerable difference in values of a nonequilibrium holes life time, while the life times of electrons have comparable values.","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128511210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Automiate Startup of Multi-channel System for Pressure Measurement in Powder Hydr-impulse Technological Settings 粉末液压冲击工艺设置中多通道压力测量系统的自动启动
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-09-11 DOI: 10.1109/SIBEDM.2006.231663
D. Grachev, V. Abanin, I. Titov
{"title":"Automiate Startup of Multi-channel System for Pressure Measurement in Powder Hydr-impulse Technological Settings","authors":"D. Grachev, V. Abanin, I. Titov","doi":"10.1109/SIBEDM.2006.231663","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.231663","url":null,"abstract":"The algorithm of the automated startup of multichannel system for pressure measurement in hydro-impulse technological settings synchronized with the running of the multi-channel measuring system is presented in the article.","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123162931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation of Anion - Stabilized III-V Surfaces using Wet Treatments 湿法制备阴离子稳定III-V型表面
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-09-11 DOI: 10.1109/SIBEDM.2006.230305
O. Tereshchenko
{"title":"Preparation of Anion - Stabilized III-V Surfaces using Wet Treatments","authors":"O. Tereshchenko","doi":"10.1109/SIBEDM.2006.230305","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.230305","url":null,"abstract":"The InAs, InP, and InSb (001) surfaces chemically treated in HCl-isopropanol solution (HCl-iPA) and annealed in vacuum at relatively low temperatures were studied by means of x-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and electron energy loss spectroscopy (EELS). The photoemission results demonstrate that the chemical treatment removes natural oxides from III-V surfaces and yields As-rich surface with several monolayers of excess arsenic on InAs and GaAs surfaces, and InClx terminated surfaces of III-P and III-Sb compounds and their alloys. Under low-temperature annealing LEED showed the anion-stabilized surface reconstructions: As-rich (2×4)c/(2×8) structure on GaAs and InAs(100) surfaces, P-rich (2×1) structure on InP(100), and (3×1) on InSb(001) surfaces. The structural properties of chemically prepared III-V (001) surfaces were found to be similar to those obtained by decapping of anioncapped epitaxial layers.","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"375 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133768836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Design of Specialized Constant-Voltage Power Supply using Software `Parus' 用Parus软件设计专用恒压电源
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-09-11 DOI: 10.1109/SIBEDM.2006.231665
S. Kharitonov, N. Borodin, D. Korobkov, T. Zhoraev, M. Maslov, A.I. Mitryashkina
{"title":"The Design of Specialized Constant-Voltage Power Supply using Software `Parus'","authors":"S. Kharitonov, N. Borodin, D. Korobkov, T. Zhoraev, M. Maslov, A.I. Mitryashkina","doi":"10.1109/SIBEDM.2006.231665","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.231665","url":null,"abstract":"in this paper the rewlts of specialized constant-voltage power spply design for processes separated manufactures are presented. Output voltage of the power supply is stabilized and controlled at each level. Analysis of source operation is realized with simulation models.","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121986676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Features of the Course `Engineering and Computer Graphics' in Distance Education of Students 《工程与计算机图形学》课程在远程教育中的特点
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-09-11 DOI: 10.1109/SIBEDM.2006.230962
O. Konukova, O. Soboleva
{"title":"Features of the Course `Engineering and Computer Graphics' in Distance Education of Students","authors":"O. Konukova, O. Soboleva","doi":"10.1109/SIBEDM.2006.230962","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.230962","url":null,"abstract":"The distant education is arisen since XX century as extra-mural courses. With the aid of extramural courses it's possible today to receive the high education, to study the foreign language, to prepare to entrance examinations, etc. However, the quality of extra-mural high education is less than internal education because of bad interaction between lecturers and students inside the period from one examination session to another session. This paper presents the experience of distance education in the Siberian State University of Telecommunication and Informatics.","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131697219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monte Carlo Simulation of As2 Adsorption on GaAs Surface 砷化镓表面吸附As2的蒙特卡罗模拟
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-09-11 DOI: 10.1109/SIBEDM.2006.230307
A. Nastovjak, N. Shwartz, Z. Yanovitskaja, A. Zverev
{"title":"Monte Carlo Simulation of As2 Adsorption on GaAs Surface","authors":"A. Nastovjak, N. Shwartz, Z. Yanovitskaja, A. Zverev","doi":"10.1109/SIBEDM.2006.230307","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.230307","url":null,"abstract":"Investigation of As2 adsorption on(111) and (001) GaAs srfaces was carried out using Monte Carlo simulation. The program package SilSim3D-7Comp taking into account chemical reactions on the surface in multicomponent systems and reconstruction of (001) surface was developed. Dependences of arsenic coverage on energy parameters of the model system were examined.","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116042115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-Ray Topography Research of Dislocation Structure in Epitaxial GeSi Films Grown on Vicinal (001) Si Substrates 邻近(001)Si衬底外延GeSi薄膜位错结构的x射线形貌研究
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.230309
A. Y. Krasotin, A. Kolesnikov, E. M. Trukhanov, A. Vasilenko, A. S. Derjabin, A.S. llin
{"title":"X-Ray Topography Research of Dislocation Structure in Epitaxial GeSi Films Grown on Vicinal (001) Si Substrates","authors":"A. Y. Krasotin, A. Kolesnikov, E. M. Trukhanov, A. Vasilenko, A. S. Derjabin, A.S. llin","doi":"10.1109/SIBEDM.2006.230309","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.230309","url":null,"abstract":"It has been theoretically predicted for the quasi-equilibrium conditions that at the first relaxation stage two dislocation arrays are formed in the vicinal (1 1 15macr) interface. The slip plane of these arrays is the same $(1 1 1) and Burgers vector directions are [0 2 2] and [2 0 2]. In this paper the investigation results of the stress relieving in GeSi/Si epitaxial heterosystem are presented, it was found that about 30% MDs have (a/2)[0 2 2] Burgers vector and 30% - (a/2) [2 0 2] one. The total amount of MDs with (a/2)[0 2 2] and (a/2)[2 0 2] Burgers vector is less than 40% of all registered MDs. This result confirms theoretical data","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127437878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Developments of Non-Volatile Memory 非易失性存储器的发展
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.231992
I. Panov, S. Kalinin
{"title":"Developments of Non-Volatile Memory","authors":"I. Panov, S. Kalinin","doi":"10.1109/SIBEDM.2006.231992","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.231992","url":null,"abstract":"The article contains the information about the most perspective technologies in area of non-volatile memory: flash memory, SONOS structures, high K structures, FRAM, MRAM, NRAM, OUM","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129774478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Removing Limitations for Value of Acoustic Oscillations Energy Entering into Processing Media 消除进入加工介质的声振荡能量值的限制
International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI: 10.1109/SIBEDM.2006.231658
V. Khmelev, S. V. Levin, S. N. Tsyganok, R. Barsukov
{"title":"Removing Limitations for Value of Acoustic Oscillations Energy Entering into Processing Media","authors":"V. Khmelev, S. V. Levin, S. N. Tsyganok, R. Barsukov","doi":"10.1109/SIBEDM.2006.231658","DOIUrl":"https://doi.org/10.1109/SIBEDM.2006.231658","url":null,"abstract":"In the present works it has been analyzed the causes, that cut down possibilities for increasing effectiveness of ultrasonic technological devices. It is shown that it is necessary to increasing the area of radiation surface of oscillatory system during with maintaining oscillations intensity required for realization of technological processes","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"298 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115925876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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