{"title":"发光硅纳米晶体的辐射缺陷","authors":"T. Korchagina, S. Cherkova, G. Kachurin","doi":"10.1109/SIBEDM.2006.230308","DOIUrl":null,"url":null,"abstract":"The influence of an ion irradiation on the properties of light-emitting silicon NC has been examined in conditions when accelerated ions F passed the studied layer through. For introduction of radiation defects in NC the layers were irradiated with 200 keV F/sup +/ ions within the dose range of 10/sup 12/-10/sup 14/ cm/sup -2/. The samples were characterized by PL, and their structural properties - by HREM and Raman spectroscopy. It is shown, that for PL quenching there is enough to create in NC individual displacements (1-5 displacement/NC). However NC retain crystal structure even at the doses exceeding the doses of PL quenching for about an order (up to 50 displacement/NC). At such doses the electron microscopy reveals in NC a heavily damaged lattice.","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Radiation Defects in the Light - Emitting Silicon Nanocrystals\",\"authors\":\"T. Korchagina, S. Cherkova, G. Kachurin\",\"doi\":\"10.1109/SIBEDM.2006.230308\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of an ion irradiation on the properties of light-emitting silicon NC has been examined in conditions when accelerated ions F passed the studied layer through. For introduction of radiation defects in NC the layers were irradiated with 200 keV F/sup +/ ions within the dose range of 10/sup 12/-10/sup 14/ cm/sup -2/. The samples were characterized by PL, and their structural properties - by HREM and Raman spectroscopy. It is shown, that for PL quenching there is enough to create in NC individual displacements (1-5 displacement/NC). However NC retain crystal structure even at the doses exceeding the doses of PL quenching for about an order (up to 50 displacement/NC). At such doses the electron microscopy reveals in NC a heavily damaged lattice.\",\"PeriodicalId\":151587,\"journal\":{\"name\":\"International Workshops and Tutorials on Electron Devices and Materials\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Workshops and Tutorials on Electron Devices and Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBEDM.2006.230308\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshops and Tutorials on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2006.230308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Radiation Defects in the Light - Emitting Silicon Nanocrystals
The influence of an ion irradiation on the properties of light-emitting silicon NC has been examined in conditions when accelerated ions F passed the studied layer through. For introduction of radiation defects in NC the layers were irradiated with 200 keV F/sup +/ ions within the dose range of 10/sup 12/-10/sup 14/ cm/sup -2/. The samples were characterized by PL, and their structural properties - by HREM and Raman spectroscopy. It is shown, that for PL quenching there is enough to create in NC individual displacements (1-5 displacement/NC). However NC retain crystal structure even at the doses exceeding the doses of PL quenching for about an order (up to 50 displacement/NC). At such doses the electron microscopy reveals in NC a heavily damaged lattice.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
