Non-equilibrium Charge Carriers Life Times in Semi-Insulating GaAs Compensated with Chromium

A. Zarubin, D. Mokeev, L. Okaevich, A. Tyazhev, M. Bimatov, M. Lelekov, I. Ponomarev
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引用次数: 11

Abstract

In activity the observed data of a life time of non-equilibrium charge carriers in detectors based on GaAs, compensated with Cr are shown On the basis of the analysis of experimental data is established, that in electrical fields with strength in range from 1 to 10 kV/s the values of non-equilibrium electrons and holes life times do not depend on electric field strength It is shown, that using of two miscellaneous techniques results in considerable difference in values of a nonequilibrium holes life time, while the life times of electrons have comparable values.
铬补偿半绝缘砷化镓中非平衡载流子寿命
在对实验数据分析的基础上,得出了在1 ~ 10kv /s的电场强度范围内,非平衡电子和空穴的寿命值与电场强度无关。两种技术的混合使用导致了非平衡空穴寿命值的显著差异,而电子的寿命值具有可比性。
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