Monte Carlo Simulation of As2 Adsorption on GaAs Surface

International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-09-11 DOI:10.1109/SIBEDM.2006.230307

A. Nastovjak, N. Shwartz, Z. Yanovitskaja, A. Zverev

引用次数: 0

Abstract

Investigation of As2 adsorption on(111) and (001) GaAs srfaces was carried out using Monte Carlo simulation. The program package SilSim3D-7Comp taking into account chemical reactions on the surface in multicomponent systems and reconstruction of (001) surface was developed. Dependences of arsenic coverage on energy parameters of the model system were examined.

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砷化镓表面吸附As2的蒙特卡罗模拟

采用蒙特卡罗模拟方法研究了(111)和(001)GaAs表面对As2的吸附。开发了考虑多组分体系表面化学反应和(001)表面重构的程序包SilSim3D-7Comp。研究了砷覆盖对模型系统能量参数的依赖关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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International Workshops and Tutorials on Electron Devices and Materials

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