非易失性存储器的发展

I. Panov, S. Kalinin
{"title":"非易失性存储器的发展","authors":"I. Panov, S. Kalinin","doi":"10.1109/SIBEDM.2006.231992","DOIUrl":null,"url":null,"abstract":"The article contains the information about the most perspective technologies in area of non-volatile memory: flash memory, SONOS structures, high K structures, FRAM, MRAM, NRAM, OUM","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Developments of Non-Volatile Memory\",\"authors\":\"I. Panov, S. Kalinin\",\"doi\":\"10.1109/SIBEDM.2006.231992\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The article contains the information about the most perspective technologies in area of non-volatile memory: flash memory, SONOS structures, high K structures, FRAM, MRAM, NRAM, OUM\",\"PeriodicalId\":151587,\"journal\":{\"name\":\"International Workshops and Tutorials on Electron Devices and Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Workshops and Tutorials on Electron Devices and Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBEDM.2006.231992\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshops and Tutorials on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2006.231992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文介绍了非易失性存储器领域的最新技术:闪存、SONOS结构、高K结构、FRAM、MRAM、NRAM、OUM
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Developments of Non-Volatile Memory
The article contains the information about the most perspective technologies in area of non-volatile memory: flash memory, SONOS structures, high K structures, FRAM, MRAM, NRAM, OUM
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