X-Ray Topography Research of Dislocation Structure in Epitaxial GeSi Films Grown on Vicinal (001) Si Substrates

International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI:10.1109/SIBEDM.2006.230309

A. Y. Krasotin, A. Kolesnikov, E. M. Trukhanov, A. Vasilenko, A. S. Derjabin, A.S. llin

引用次数: 0

Abstract

It has been theoretically predicted for the quasi-equilibrium conditions that at the first relaxation stage two dislocation arrays are formed in the vicinal (1 1 15macr) interface. The slip plane of these arrays is the same $(1 1 1) and Burgers vector directions are [0 2 2] and [2 0 2]. In this paper the investigation results of the stress relieving in GeSi/Si epitaxial heterosystem are presented, it was found that about 30% MDs have (a/2)[0 2 2] Burgers vector and 30% - (a/2) [2 0 2] one. The total amount of MDs with (a/2)[0 2 2] and (a/2)[2 0 2] Burgers vector is less than 40% of all registered MDs. This result confirms theoretical data

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邻近(001)Si衬底外延GeSi薄膜位错结构的x射线形貌研究

在准平衡条件下，理论上预测了在第一松弛阶段相邻(1 1 15macr)界面上形成两个位错阵列。这些数组的滑动面是相同的$(1 1 1)，Burgers矢量方向是[0 2 2]和[2 2 2]。本文介绍了GeSi/Si外延异质系统中应力消除的研究结果，发现约30%的MDs具有(a/2)[0 2 2] Burgers矢量和30% - (a/2)[2 2] Burgers矢量。(a/2)[0 2 2]和(a/2)[2 2] Burgers向量的MDs总数不到所有注册MDs的40%。这一结果证实了理论数据

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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International Workshops and Tutorials on Electron Devices and Materials

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