The Modern Technology for Silicon NanoFET

International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI:10.1109/SIBEDM.2006.231996

T. V. Lobanova, Y.I. Vorontsov, S. Kalinin

引用次数: 1

Abstract

Under consideration are the technological peculiarities of the production and construction of modern field silicon nanotransistors (FSNT), including teracycle transistors (TCT), their performance capabilities and limit properties are analyzed

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硅纳米效应晶体管的现代技术

针对现代现场硅纳米晶体管(FSNT)，包括太周期晶体管(TCT)的生产和结构的技术特点，分析了其性能和极限特性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Workshops and Tutorials on Electron Devices and Materials

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