{"title":"The Perspective Structures for Microwave Heterotransistors for Communication Techniques","authors":"Vitaliy G. Mashkantsev, Sergey Kalinin","doi":"10.1109/SIBEDM.2006.231995","DOIUrl":null,"url":null,"abstract":"This information contains the main elementary base of nanoheterostructural electronics, which combines high electron mobility transistors (HEMT), heterojunction bipolar transistors (HBT) and GaN transistors","PeriodicalId":151587,"journal":{"name":"International Workshops and Tutorials on Electron Devices and Materials","volume":"27 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshops and Tutorials on Electron Devices and Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBEDM.2006.231995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This information contains the main elementary base of nanoheterostructural electronics, which combines high electron mobility transistors (HEMT), heterojunction bipolar transistors (HBT) and GaN transistors