Reconstruction Phase Transition γ(2×4) <-> c(4×4) on (001) GaAs Surface

Abstract

In present study MBE equipment /spl Lt/Riber-32P/spl Gt/ with solid state sources of materials was used. The RHEED system was applied to get the diffraction patterns on reflection. The RHEED patterns changing let us determine surface reconstruction and sharply tracking reconstructional transitions. The [001] GaAs substrates with dimensional 3/spl times/3 mm/sup 2/ were used. That geometry of samples let reach the high accuracy as assigned in investigated parameters. The elections of conditions of experiment were done in connection with the fact of homoepitaxy on [001] GaAs surface from As/sub 4/ and Ga beam is the modeling system in A/sup 3/B/sup 5/ compound epitaxy. The reconstruction /spl gamma/(2/spl times/4) and c(4/spl times/4) on the [001]GaAs surface is the well example of ordered and disordered structure.