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STEP BUNCHING OF GAAS(111) VICINAL SURFACES DURING THE HIGH-TEMPERATURE ANNEALING PROCESS 高温退火过程中gaas(111)邻近表面的步聚
Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI: 10.29003/m3072.mmmsec-2022/74-77
A. Spirina, N. Shwartz
{"title":"STEP BUNCHING OF GAAS(111) VICINAL SURFACES DURING THE HIGH-TEMPERATURE ANNEALING PROCESS","authors":"A. Spirina, N. Shwartz","doi":"10.29003/m3072.mmmsec-2022/74-77","DOIUrl":"https://doi.org/10.29003/m3072.mmmsec-2022/74-77","url":null,"abstract":"In this work, simulation of GaAs(111) high-temperature annealing has been carried out. The effect of gallium droplets on the surface relief evolution of the vicinal GaAs(111) substrates with different misorientation angles during annealing in a wide temperature range is analyzed","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124851977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A MONATOMIC LENNARD-JONES SYSTEM COOLING SIMULATION WITH RATES CLOSE TO THE EXPERIMENTALLY IMPLEMENTED ONES 单原子lennard-jones系统冷却模拟，其速率接近实验实现的速率
Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI: 10.29003/m3087.mmmsec-2022/119-120
A. Farkhutdinov
{"title":"A MONATOMIC LENNARD-JONES SYSTEM COOLING SIMULATION WITH RATES CLOSE TO THE EXPERIMENTALLY IMPLEMENTED ONES","authors":"A. Farkhutdinov","doi":"10.29003/m3087.mmmsec-2022/119-120","DOIUrl":"https://doi.org/10.29003/m3087.mmmsec-2022/119-120","url":null,"abstract":"A technique for melts cooling simulation at rates close to those experimentally implemented ones is presented in this work.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125788594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
STRUCTURE OF INTRINSIC POINT DEFECTS IN CDTE cdte中固有点缺陷的结构
Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI: 10.29003/m3092.mmmsec-2022/135-138
S. Kobeleva
{"title":"STRUCTURE OF INTRINSIC POINT DEFECTS IN CDTE","authors":"S. Kobeleva","doi":"10.29003/m3092.mmmsec-2022/135-138","DOIUrl":"https://doi.org/10.29003/m3092.mmmsec-2022/135-138","url":null,"abstract":"The currently available data on the composition and constants of quasi-chemical reactions of IPD formation in CdTe are analyzed. Calculations of congruently evaporating compositions and boundaries of the compound homogeneity region in various models are presented. It is shown that the model that takes into account, in addition to charged Frenkel defects in both sublattices, also a neutral defect such as antisite tellurium or cadmium divacancies has the most satisfactory agreement with the available experimental data","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125807971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SYNTHESIS OF NEW MATERIALS AS A PRIORITY DIRECTION OF INNOVATIVE DEVELOPMENT OF THE INDUSTRY 新材料合成作为行业创新发展的优先方向
Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI: 10.29003/m3057.mmmsec-2022/8-14
A. Zatsarinnyy, K. Abgaryan
{"title":"SYNTHESIS OF NEW MATERIALS AS A PRIORITY DIRECTION OF INNOVATIVE DEVELOPMENT OF THE INDUSTRY","authors":"A. Zatsarinnyy, K. Abgaryan","doi":"10.29003/m3057.mmmsec-2022/8-14","DOIUrl":"https://doi.org/10.29003/m3057.mmmsec-2022/8-14","url":null,"abstract":"The report deals with topical problems associated with the creation of new materials in various fields of their application. Examples of new materials are given. It is noted that today it is the most important factor in the innovative development of Russian industry. The relevance of developing new computational methods for the synthesis of new materials is shown. The requirements for a high-performance infrastructure for multiscale computer simulation are formulated.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124627487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
NUMERICAL MODELING OF PHOTOVOLTAIC CHARACTERISTICS OF SOLAR CELLS BASED ON A TIO2/CU2O HETEROJUNCTION 基于tio2 / cu2o异质结的太阳能电池光电特性数值模拟
Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI: 10.29003/m3082.mmmsec-2022/102-105
A. Saenko, V. Zheits, G. Bilyk, S. Malyukov
{"title":"NUMERICAL MODELING OF PHOTOVOLTAIC CHARACTERISTICS OF SOLAR CELLS BASED ON A TIO2/CU2O HETEROJUNCTION","authors":"A. Saenko, V. Zheits, G. Bilyk, S. Malyukov","doi":"10.29003/m3082.mmmsec-2022/102-105","DOIUrl":"https://doi.org/10.29003/m3082.mmmsec-2022/102-105","url":null,"abstract":"Numerical modeling of an oxide solar cell based on Cu2O/TiO2 pn heterojunction was carried out in order to optimize its structure and increase the energy conversion efficiency","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127673921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SIMULATION OF OSCILLATIONS OF A MOVING ELASTIC FABRIC 运动弹性织物振动的模拟
Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI: 10.29003/m3081.mmmsec-2022/100-102
A. Romanenkov
{"title":"SIMULATION OF OSCILLATIONS OF A MOVING ELASTIC FABRIC","authors":"A. Romanenkov","doi":"10.29003/m3081.mmmsec-2022/100-102","DOIUrl":"https://doi.org/10.29003/m3081.mmmsec-2022/100-102","url":null,"abstract":"The paper considers a model problem of one-dimensional small transverse vibrations of an elastic web moving at a constant speed. The oscillatory process is described by a linear differential equation of the 4th with constant coefficients. In the model under consideration, the Coriolis force is considered, which leads to the appearance of a term with a mixed derivative in the differential equation. This effect makes it very difficult to obtain an exact solution in the form of a Fourier series, but it is possible to propose an algorithm for constructing a family of exact solutions in the form of a special trigonometric series. For various conditions of fastening, it is established that the solution can be constructed in the form of a Fourier series according to the system of eigenfunctions of the auxiliary problem of beam oscillations. In the paper, the question of the convergence of the resulting series is investigated","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129305882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
KINETIC MODEL OF SILICON OXIDE GROWTH IN THE PROCESS OF RADICAL OXIDATION 自由基氧化过程中氧化硅生长的动力学模型
Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI: 10.29003/m3076.mmmsec-2022/85-88
S. Gorokhov, M. Chernyaev, S. Patyukov, A. Rezvanov
{"title":"KINETIC MODEL OF SILICON OXIDE GROWTH IN THE PROCESS OF RADICAL OXIDATION","authors":"S. Gorokhov, M. Chernyaev, S. Patyukov, A. Rezvanov","doi":"10.29003/m3076.mmmsec-2022/85-88","DOIUrl":"https://doi.org/10.29003/m3076.mmmsec-2022/85-88","url":null,"abstract":"The kinetics of radical oxidation in the ISSG (in situ steamgeneration) process based on hydrogen combustion is investigated. The process of oxide growth was described by the linear parabolic Deal-Grove model and the exponential growth laws.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121808986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
POTENTIAL INTERATOMIC INTERACTIONS FOR STUDYING OF CRYSTAL STRUCTURES PROPERTIES 研究晶体结构性质的潜在原子间相互作用
Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI: 10.29003/m3086.mmmsec-2022/115-118
O. Uvarova, K. Abgaryan, D. Bazhanov, S. Uvarov
{"title":"POTENTIAL INTERATOMIC INTERACTIONS FOR STUDYING OF CRYSTAL STRUCTURES PROPERTIES","authors":"O. Uvarova, K. Abgaryan, D. Bazhanov, S. Uvarov","doi":"10.29003/m3086.mmmsec-2022/115-118","DOIUrl":"https://doi.org/10.29003/m3086.mmmsec-2022/115-118","url":null,"abstract":"The paper presents a review of the potentials of interatomic interaction for studying the properties of structures with different types of crystal lattice. Tersoff potential, MEAM potential, and modified 2NN MEAM potential are considered.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123230101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
THERMAL PHYSICS FOR NANO ELECTRONICS 纳米电子学的热物理
Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI: 10.29003/m3088.mmmsec-2022/120-123
V. Khvesyuk
{"title":"THERMAL PHYSICS FOR NANO ELECTRONICS","authors":"V. Khvesyuk","doi":"10.29003/m3088.mmmsec-2022/120-123","DOIUrl":"https://doi.org/10.29003/m3088.mmmsec-2022/120-123","url":null,"abstract":"In this work is shown that investigation of phenomena heat transport in nanosructures needs development fundamentally new direction of thermal physics – thermal physics of nanostructures.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123811109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DEFECT FORMATION IN DISLOCATION-FREE SILICON SINGLE CRYSTALS 无位错硅单晶中的缺陷形成
Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI: 10.29003/m3091.mmmsec-2022/132-135
N. Verezub, A. Prostomolotov
{"title":"DEFECT FORMATION IN DISLOCATION-FREE SILICON SINGLE CRYSTALS","authors":"N. Verezub, A. Prostomolotov","doi":"10.29003/m3091.mmmsec-2022/132-135","DOIUrl":"https://doi.org/10.29003/m3091.mmmsec-2022/132-135","url":null,"abstract":"The physical concepts of defect formation processes in dislocation-free silicon single crystals are discussed. Mathematical models of these processes are considered for various temperature ranges realized during their growth. Near the crystallization temperature, the processes of fast recombination and transfer of intrinsic point defects (vacancies and interstitial silicon atoms) are considered in detail, the calculation results of which are verified by the experimental data of the carrier lifetime map in a silicon single crystal 150 mm in diameter grown by Czochralski method","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124661926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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