cdte中固有点缺陷的结构

S. Kobeleva
{"title":"cdte中固有点缺陷的结构","authors":"S. Kobeleva","doi":"10.29003/m3092.mmmsec-2022/135-138","DOIUrl":null,"url":null,"abstract":"The currently available data on the composition and constants of quasi-chemical reactions of IPD formation in CdTe are analyzed. Calculations of congruently evaporating compositions and boundaries of the compound homogeneity region in various models are presented. It is shown that the model that takes into account, in addition to charged Frenkel defects in both sublattices, also a neutral defect such as antisite tellurium or cadmium divacancies has the most satisfactory agreement with the available experimental data","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"STRUCTURE OF INTRINSIC POINT DEFECTS IN CDTE\",\"authors\":\"S. Kobeleva\",\"doi\":\"10.29003/m3092.mmmsec-2022/135-138\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The currently available data on the composition and constants of quasi-chemical reactions of IPD formation in CdTe are analyzed. Calculations of congruently evaporating compositions and boundaries of the compound homogeneity region in various models are presented. It is shown that the model that takes into account, in addition to charged Frenkel defects in both sublattices, also a neutral defect such as antisite tellurium or cadmium divacancies has the most satisfactory agreement with the available experimental data\",\"PeriodicalId\":151453,\"journal\":{\"name\":\"Mathematical modeling in materials science of electronic component\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mathematical modeling in materials science of electronic component\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29003/m3092.mmmsec-2022/135-138\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical modeling in materials science of electronic component","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29003/m3092.mmmsec-2022/135-138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

分析了目前有关碲化镉中IPD形成准化学反应的组成和常数的资料。给出了各种模式下同蒸发组分和复合均匀区边界的计算。结果表明,该模型除了考虑两个亚晶格中的带电Frenkel缺陷外,还考虑了中性缺陷,如对位碲或镉的缺陷,与现有实验数据的一致性最令人满意
本文章由计算机程序翻译,如有差异,请以英文原文为准。
STRUCTURE OF INTRINSIC POINT DEFECTS IN CDTE
The currently available data on the composition and constants of quasi-chemical reactions of IPD formation in CdTe are analyzed. Calculations of congruently evaporating compositions and boundaries of the compound homogeneity region in various models are presented. It is shown that the model that takes into account, in addition to charged Frenkel defects in both sublattices, also a neutral defect such as antisite tellurium or cadmium divacancies has the most satisfactory agreement with the available experimental data
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信