{"title":"无位错硅单晶中的缺陷形成","authors":"N. Verezub, A. Prostomolotov","doi":"10.29003/m3091.mmmsec-2022/132-135","DOIUrl":null,"url":null,"abstract":"The physical concepts of defect formation processes in dislocation-free silicon single crystals are discussed. Mathematical models of these processes are considered for various temperature ranges realized during their growth. Near the crystallization temperature, the processes of fast recombination and transfer of intrinsic point defects (vacancies and interstitial silicon atoms) are considered in detail, the calculation results of which are verified by the experimental data of the carrier lifetime map in a silicon single crystal 150 mm in diameter grown by Czochralski method","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DEFECT FORMATION IN DISLOCATION-FREE SILICON SINGLE CRYSTALS\",\"authors\":\"N. Verezub, A. Prostomolotov\",\"doi\":\"10.29003/m3091.mmmsec-2022/132-135\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The physical concepts of defect formation processes in dislocation-free silicon single crystals are discussed. Mathematical models of these processes are considered for various temperature ranges realized during their growth. Near the crystallization temperature, the processes of fast recombination and transfer of intrinsic point defects (vacancies and interstitial silicon atoms) are considered in detail, the calculation results of which are verified by the experimental data of the carrier lifetime map in a silicon single crystal 150 mm in diameter grown by Czochralski method\",\"PeriodicalId\":151453,\"journal\":{\"name\":\"Mathematical modeling in materials science of electronic component\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mathematical modeling in materials science of electronic component\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29003/m3091.mmmsec-2022/132-135\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical modeling in materials science of electronic component","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29003/m3091.mmmsec-2022/132-135","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
DEFECT FORMATION IN DISLOCATION-FREE SILICON SINGLE CRYSTALS
The physical concepts of defect formation processes in dislocation-free silicon single crystals are discussed. Mathematical models of these processes are considered for various temperature ranges realized during their growth. Near the crystallization temperature, the processes of fast recombination and transfer of intrinsic point defects (vacancies and interstitial silicon atoms) are considered in detail, the calculation results of which are verified by the experimental data of the carrier lifetime map in a silicon single crystal 150 mm in diameter grown by Czochralski method
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