KINETIC MODEL OF SILICON OXIDE GROWTH IN THE PROCESS OF RADICAL OXIDATION

Mathematical modeling in materials science of electronic component Pub Date : 2022-10-22 DOI:10.29003/m3076.mmmsec-2022/85-88

S. Gorokhov, M. Chernyaev, S. Patyukov, A. Rezvanov

引用次数: 0

Abstract

The kinetics of radical oxidation in the ISSG (in situ steamgeneration) process based on hydrogen combustion is investigated. The process of oxide growth was described by the linear parabolic Deal-Grove model and the exponential growth laws.

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自由基氧化过程中氧化硅生长的动力学模型

研究了基于氢气燃烧的原位蒸汽发生过程中自由基氧化的动力学。氧化物的生长过程用线性抛物型Deal-Grove模型和指数增长规律来描述。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mathematical modeling in materials science of electronic component

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