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Relationship between the polyurea underlayer structure and PEG surface coverage 聚脲底层结构与 PEG 表面覆盖率之间的关系
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-07-15 DOI: 10.35848/1347-4065/ad5cb3
Ryo Tabata, Ryosuke Matsubara and Atsushi Kubono
{"title":"Relationship between the polyurea underlayer structure and PEG surface coverage","authors":"Ryo Tabata, Ryosuke Matsubara and Atsushi Kubono","doi":"10.35848/1347-4065/ad5cb3","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5cb3","url":null,"abstract":"Increasing the surface coverage of antifouling materials is essential to enhance the performance of antifouling coatings. In this study, polyurea thin-film underlayers were fabricated by co-depositing difunctional isocyanates with difunctional or trifunctional amines. The relationships among the underlayer structure, terminal group density before polyethylene glycol (PEG) termination, and PEG surface coverage were investigated. The results showed that employing trifunctional amines in the underlayer led to increased terminal group density before PEG termination. Moreover, the reduced hydrogen-bonding capability between the polyurea molecules contributes to enhanced PEG surface coverage.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"7 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141743603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integration of buried nanomagnet and silicon spin qubits in a one-dimensional fin structure 在一维鳍结构中集成埋入式纳米磁体和硅自旋量子比特
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-07-09 DOI: 10.35848/1347-4065/ad59ea
Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori
{"title":"Integration of buried nanomagnet and silicon spin qubits in a one-dimensional fin structure","authors":"Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori","doi":"10.35848/1347-4065/ad59ea","DOIUrl":"https://doi.org/10.35848/1347-4065/ad59ea","url":null,"abstract":"We adopt a buried nanomagnet (BNM) technology on a one-dimensional (1D) array of silicon spin qubits, and its availability was investigated using numerical simulations. The qubit array is formed in the center of the Si fin and the nanomagnet is buried in the lower lateral part of the qubits. The nanomagnet placed near the qubit generates a strong slanting magnetic field in the qubit, enabling X-gate operation approximately 15 times faster than in conventional cases. Furthermore, the formation of a BNM using a self-aligned process suppresses the dimensional variation of the nanomagnet caused by process variation, thereby mitigating the slanting field fluctuation and fidelity degradation. In addition, even for multiple qubits formed in the Si fin, the BNM with excess length generated a uniform slanting field, mitigating fidelity degradation and enabling all qubits to operate using a single-frequency microwave. Therefore, the proposed structure is useful for 1D integrated structures.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"13 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141571352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-pressure hydrogen annealing improving the cryogenic operation of Si (110)-oriented n-MOSFETs 高压氢退火改善了硅 (110) 取向 n-MOSFET 的低温工作性能
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-07-09 DOI: 10.35848/1347-4065/ad5aca
Shunsuke Shitakata, Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato and Takahiro Mori
{"title":"High-pressure hydrogen annealing improving the cryogenic operation of Si (110)-oriented n-MOSFETs","authors":"Shunsuke Shitakata, Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato and Takahiro Mori","doi":"10.35848/1347-4065/ad5aca","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5aca","url":null,"abstract":"This study experimentally investigated the effects of an additional high-pressure hydrogen annealing (HPHA) on the cryogenic operation of Si (110)-oriented n-MOSFETs. The HPHA induced improvements in the subthreshold swing (SS), threshold voltage (Vth), and ON current at cryogenic temperatures. Further, we analyzed the SS-drain current curves using the analytical model and concluded that HPHA reduced the density of the band-edge states. In addition, the analysis of the temperature-dependent Vth supported this conclusion. Furthermore, effective mobility analysis results indicated that the improvement in the ON current was attributable to the improvement in the band-edge states. Therefore, we conclude that the HPHA process positively affected the Si/SiO2 interface and reduced the interface-related band-edge states, thereby improving the cryogenic operation of MOSFETs.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"46 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141614420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Humidity sensing by tailoring light absorption of SiO2/bromophenol blue (BPB) thin film on optical fiber 通过调整光纤上二氧化硅/溴酚蓝（BPB）薄膜的光吸收实现湿度传感
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-07-08 DOI: 10.35848/1347-4065/ad5978
Hengheng Zhang, Min Lai, Yuxin Chen, Yutong Qi, Bao Zhu, Xuefei Xiao, Xingchen Zhou, Yan Ma
{"title":"Humidity sensing by tailoring light absorption of SiO2/bromophenol blue (BPB) thin film on optical fiber","authors":"Hengheng Zhang, Min Lai, Yuxin Chen, Yutong Qi, Bao Zhu, Xuefei Xiao, Xingchen Zhou, Yan Ma","doi":"10.35848/1347-4065/ad5978","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5978","url":null,"abstract":"The fabrication of an evanescent wave fiber optic humidity sensor based on bromophenol blue (BPB) doped SiO<sub>2</sub> thin film was demonstrated, modulating in light intensity. The sensing film was coated on a fiber core via a single-step dip coating method, followed by sol-gel processing of the precursor. A good exponential relationship was established between output light intensity and relative humidity. The sensor exhibited a high sensitivity and fast response and recovery, as well as low hysteresis, good stability and repeatability. Adsorption of ambient water triggered a ring-opening reaction of BPB, which enhanced light absorption of the sensing film significantly and affected the transmission of the evanescent wave.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"21 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141571353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nano-pixel polarization rotator for a photonic integrated breath sensor 用于光子集成呼吸传感器的纳米像素偏振旋转器
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-07-01 DOI: 10.35848/1347-4065/ad5299
Sara Bruhier, Haisong Jiang and Kiichi Hamamoto
{"title":"Nano-pixel polarization rotator for a photonic integrated breath sensor","authors":"Sara Bruhier, Haisong Jiang and Kiichi Hamamoto","doi":"10.35848/1347-4065/ad5299","DOIUrl":"https://doi.org/10.35848/1347-4065/ad5299","url":null,"abstract":"In response to the global aging population, a photonic-integrated-circuit sensor is investigated for the detection of disease markers within human breath content. The device relies on cavity-ring-down spectroscopy with an amplifying medium and loop feedback to secure sufficient sensitivity down to ppm-order concentration detection. This configuration, however, might cause unwanted oscillation, and the polarization rotation method has been proposed to prevent this issue. We have researched a waveguide-based polarization rotator using nano-pixels. The device consists of two regions: (1) From TE00 mode TE10 modes conversion and (2) TE10 to TM00 modes conversion. As the intermediary TE10 mode quality is key to realizing polarization rotation performance, the purpose of this study is to realize high-quality TE10 by employing the mean-squared-error criterion for waveguide design optimization. A finite-difference time-domain simulation with this method reveals a TE10 mode with 1% accuracy that results in a polarization extinction ratio improved from 4.3 to 8.6 dB.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"33 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141508732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-grown and irradiation-induced Al and N vacancies in 100 keV H+ implanted AlN single crystals 100 keV H+ 植入氮化铝单晶中的内生长和辐照诱导的铝和氮空位
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-06-30 DOI: 10.35848/1347-4065/ad52da
Igor Prozheev, Tanja Heikkinen, Ilja Makkonen, Kenichiro Mizohata and Filip Tuomisto
{"title":"In-grown and irradiation-induced Al and N vacancies in 100 keV H+ implanted AlN single crystals","authors":"Igor Prozheev, Tanja Heikkinen, Ilja Makkonen, Kenichiro Mizohata and Filip Tuomisto","doi":"10.35848/1347-4065/ad52da","DOIUrl":"https://doi.org/10.35848/1347-4065/ad52da","url":null,"abstract":"We report positron annihilation results on in-grown and proton-irradiation-induced vacancy defects in AlN single crystals grown by physical vapor transport. The samples were irradiated with 100 keV H+ ions to varying fluences in the range of 5 × 1014 − 2 × 1018 ions cm–2. Doppler broadening of annihilation radiation was recorded in as-grown and irradiated samples with a slow positron beam with varying implantation energy. Doppler results combined with first principles theoretical calculations show that the 100 keV H+ irradiation introduces isolated VAl on the ion track and VN-rich vacancy clusters at the end of the ion range. The results suggest that the excess amount of detected VN originates from a high concentration of in-grown VN. So far, these defects have been considered to be unidentified negative ion-like defects in AlN.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"31 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization characteristics of Ni/Pt-based spintronic terahertz emitters based on spin electron dynamics 基于自旋电子动力学的镍/铂基自旋电子太赫兹发射器的偏振特性
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-06-25 DOI: 10.35848/1347-4065/ad52d9
Anthony Tuico, John Paul Ferrolino, Neil Irvin Cabello, Ivan Cedrick Verona, Wilson Garcia, Arnel Salvador, Hannah Bardolaza, Elmer Estacio and Alexander De Los Reyes
{"title":"Polarization characteristics of Ni/Pt-based spintronic terahertz emitters based on spin electron dynamics","authors":"Anthony Tuico, John Paul Ferrolino, Neil Irvin Cabello, Ivan Cedrick Verona, Wilson Garcia, Arnel Salvador, Hannah Bardolaza, Elmer Estacio and Alexander De Los Reyes","doi":"10.35848/1347-4065/ad52d9","DOIUrl":"https://doi.org/10.35848/1347-4065/ad52d9","url":null,"abstract":"We report on the terahertz (THz) emission polarization characteristics of spintronic nickel/platinum (Ni/Pt) bilayer films. The films were deposited on MgO substrates via electron beam deposition with varying Ni thicknesses of 5, 7, and 9 nm and a constant Pt thickness of 6 nm. Results from B-field polarity-dependent THz measurements exhibited different THz emission characteristics for the p- and s-polarized components. We attribute the strong, wide-bandwidth B-field dependent p-polarized component to the inverse spin Hall effect and the weak, low-bandwidth B-field independent s-polarized component to the ultrafast demagnetization process. The peak-to-peak THz emission amplitudes were demonstrated to be dependent on the sample rotational angle about the optical axis which suggests sample inhomogeneity from the deposited Ni/Pt spintronic films. These results are crucial for the material design and development of more intense spintronic THz sources.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"40 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141508733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal-aware device design of low-power H2S sensors using Joule-heated Au nanosheet 利用焦耳热金纳米片设计低功耗 H2S 传感器的热敏器件
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-06-24 DOI: 10.35848/1347-4065/ad53b1
Taro Kato, Takahisa Tanaka and Ken Uchida
{"title":"Thermal-aware device design of low-power H2S sensors using Joule-heated Au nanosheet","authors":"Taro Kato, Takahisa Tanaka and Ken Uchida","doi":"10.35848/1347-4065/ad53b1","DOIUrl":"https://doi.org/10.35848/1347-4065/ad53b1","url":null,"abstract":"We demonstrated Joule-heated Au nanosheet H2S sensors for low-power operation. We confirmed that low temperature regions in the Joule-heated Au nanosheet caused lower response and recovery characteristics than uniformly heated Au nanosheets. By using Pt electrodes, which has lower thermal conductivity than Au, heat dissipation to the electrodes could be suppressed, resulting in lower power consumption and faster recovery characteristics. We then discussed the optimal sensor structure by developing an analytical model of electrical and thermal resistances. We introduced semi-elliptical intermediate electrodes between the channel and pad electrodes to efficiently suppress the heat dissipation, demonstrating that the optimal channel length and thermal conductivity of the intermediate electrode κint exist depending on the channel width. Finally, we proposed the sensor design strategy of considering the κint dependences of the electrical and thermal resistances. This strategy is useful for all metal nanosheet sensors because it gives an estimation of their optimal structures.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"12 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-high temporal resolution images of a homogeneous electric field short air gap negative streamer at overvoltage and atmospheric pressure 过电压和大气压下均匀电场短气隙负流束的超高时间分辨率图像
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-06-23 DOI: 10.35848/1347-4065/ad51bd
Bingzhuo Wang, Bo Jing, Chunfeng Yu and Xiaoxuan Jiao
{"title":"Ultra-high temporal resolution images of a homogeneous electric field short air gap negative streamer at overvoltage and atmospheric pressure","authors":"Bingzhuo Wang, Bo Jing, Chunfeng Yu and Xiaoxuan Jiao","doi":"10.35848/1347-4065/ad51bd","DOIUrl":"https://doi.org/10.35848/1347-4065/ad51bd","url":null,"abstract":"Air gap discharge is one of the most basic scientific problems in the field of high-voltage engineering. The homogeneous electric field 1.5 mm air gap negative streamer at overvoltage and atmospheric pressure is observed by a high-speed 4-channel framing camera. The ultra-high temporal resolution images of a single negative stream are captured (the exposure time is 5 ns, and the inter-frame delay is no more than 0.1 ns). It is observed that the negative streamer formed in the middle of the air gap and grew bidirectionally towards both electrodes. At the same time, the electrical measurement is also carried out.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"20 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141531201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma 利用 H2O 等离子体改善原子层沉积 SiO2 栅极介电质的 4H-SiC (0001) MOS 器件的电气特性
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-06-23 DOI: 10.35848/1347-4065/ad52db
An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi and Kuniyuki Kakushima
{"title":"Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma","authors":"An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi and Kuniyuki Kakushima","doi":"10.35848/1347-4065/ad52db","DOIUrl":"https://doi.org/10.35848/1347-4065/ad52db","url":null,"abstract":"SiC MOS devices with SiO2 gate dielectrics deposited by an atomic layer deposition (ALD) process with remote H2O plasma were investigated. H2O plasma was found to have a strong oxidizing effect compared to that of remote O2 plasma. Hydroxyl groups found in the SiO2 films with H2O plasma were removed by post-deposition annealing (PDA), and no difference in the IR absorption spectra was found between H2O and O2 plasma samples. A low leakage current and a high breakdown field of 10.5 MV cm−1 were obtained, comparable to the SiO2 films formed by O2 plasma. SiC capacitors showed reduced hysteresis of 0.07 V and a better bias stress resistance than an O2-plasma-formed SiO2 film. Moreover, MOSFETs revealed a high peak mobility of 26 cm2V−1s−1. We postulate that removing hydroxyl groups during the PDA can effectively remove the near-interface defects of SiO2/SiC.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"13 2 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141517912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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