Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, APPLIED
An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi and Kuniyuki Kakushima
{"title":"Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma","authors":"An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi and Kuniyuki Kakushima","doi":"10.35848/1347-4065/ad52db","DOIUrl":null,"url":null,"abstract":"SiC MOS devices with SiO2 gate dielectrics deposited by an atomic layer deposition (ALD) process with remote H2O plasma were investigated. H2O plasma was found to have a strong oxidizing effect compared to that of remote O2 plasma. Hydroxyl groups found in the SiO2 films with H2O plasma were removed by post-deposition annealing (PDA), and no difference in the IR absorption spectra was found between H2O and O2 plasma samples. A low leakage current and a high breakdown field of 10.5 MV cm−1 were obtained, comparable to the SiO2 films formed by O2 plasma. SiC capacitors showed reduced hysteresis of 0.07 V and a better bias stress resistance than an O2-plasma-formed SiO2 film. Moreover, MOSFETs revealed a high peak mobility of 26 cm2V−1s−1. We postulate that removing hydroxyl groups during the PDA can effectively remove the near-interface defects of SiO2/SiC.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"13 2 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad52db","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

SiC MOS devices with SiO2 gate dielectrics deposited by an atomic layer deposition (ALD) process with remote H2O plasma were investigated. H2O plasma was found to have a strong oxidizing effect compared to that of remote O2 plasma. Hydroxyl groups found in the SiO2 films with H2O plasma were removed by post-deposition annealing (PDA), and no difference in the IR absorption spectra was found between H2O and O2 plasma samples. A low leakage current and a high breakdown field of 10.5 MV cm−1 were obtained, comparable to the SiO2 films formed by O2 plasma. SiC capacitors showed reduced hysteresis of 0.07 V and a better bias stress resistance than an O2-plasma-formed SiO2 film. Moreover, MOSFETs revealed a high peak mobility of 26 cm2V−1s−1. We postulate that removing hydroxyl groups during the PDA can effectively remove the near-interface defects of SiO2/SiC.
利用 H2O 等离子体改善原子层沉积 SiO2 栅极介电质的 4H-SiC (0001) MOS 器件的电气特性
研究人员利用原子层沉积(ALD)工艺和远程 H2O 等离子体,对带有 SiO2 栅极电介质的 SiC MOS 器件进行了研究。与远程 O2 等离子体相比,H2O 等离子体具有很强的氧化作用。通过沉积后退火 (PDA),在使用 H2O 等离子体的二氧化硅薄膜中发现的羟基被去除,而且 H2O 和 O2 等离子体样品的红外吸收光谱没有差别。获得的低漏电流和 10.5 MV cm-1 的高击穿场强与 O2 等离子体形成的 SiO2 薄膜相当。与二氧化硅等离子体形成的二氧化硅薄膜相比,碳化硅电容器的滞后降低了 0.07 V,并且具有更好的抗偏压能力。此外,MOSFET 的峰值迁移率高达 26 cm2V-1s-1。我们推测,在 PDA 过程中去除羟基可以有效地消除 SiO2/SiC 的近表面缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics 物理-物理:应用
CiteScore
3.00
自引率
26.70%
发文量
818
审稿时长
3.5 months
期刊介绍: The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信