高压氢退火改善了硅 (110) 取向 n-MOSFET 的低温工作性能

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-07-09 DOI:10.35848/1347-4065/ad5aca

Shunsuke Shitakata, Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato and Takahiro Mori

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引用次数: 0

摘要

本研究通过实验研究了附加高压氢退火（HPHA）对硅（110）取向 n-MOSFET 低温工作的影响。HPHA 改善了低温条件下的阈下摆动 (SS)、阈值电压 (Vth) 和导通电流。此外，我们还利用分析模型分析了 SS 漏极电流曲线，并得出结论：HPHA 降低了带边态的密度。此外，对随温度变化的 Vth 的分析也支持这一结论。此外，有效迁移率分析结果表明，导通电流的改善归因于带边态的改善。因此，我们得出结论：HPHA 工艺对 Si/SiO2 界面产生了积极影响，减少了与界面相关的带边态，从而改善了 MOSFET 的低温工作性能。

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High-pressure hydrogen annealing improving the cryogenic operation of Si (110)-oriented n-MOSFETs

This study experimentally investigated the effects of an additional high-pressure hydrogen annealing (HPHA) on the cryogenic operation of Si (110)-oriented n-MOSFETs. The HPHA induced improvements in the subthreshold swing (SS), threshold voltage (Vth), and ON current at cryogenic temperatures. Further, we analyzed the SS-drain current curves using the analytical model and concluded that HPHA reduced the density of the band-edge states. In addition, the analysis of the temperature-dependent Vth supported this conclusion. Furthermore, effective mobility analysis results indicated that the improvement in the ON current was attributable to the improvement in the band-edge states. Therefore, we conclude that the HPHA process positively affected the Si/SiO2 interface and reduced the interface-related band-edge states, thereby improving the cryogenic operation of MOSFETs.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS