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Effect of gas injection pattern on magnetically expanding rf plasma source 气体注入模式对磁膨胀射频等离子体源的影响
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-18 DOI: 10.35848/1347-4065/ad6e92
Yugo Nakahama and Kazunori Takahashi
{"title":"Effect of gas injection pattern on magnetically expanding rf plasma source","authors":"Yugo Nakahama and Kazunori Takahashi","doi":"10.35848/1347-4065/ad6e92","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6e92","url":null,"abstract":"Argon gas is injected from a back plate having either a radial center hole or shower-patterned eight holes into a 13.3-cm-diameter and 25-cm-long radio frequency (rf) plasma source attached to a 43.7-cm-diameter and 65cm-long diffusion chamber under an expanding magnetic field, which resembles the magnetic nozzle rf plasma thruster. The source has a double-turn loop antenna powered by a 13.56 MHz rf generator at a maximum power level of ~2.8 kW in low-pressure argon, providing a plasma density of about 1018 m−3 in the source. A high plasma density and a slightly low electron temperature are obtained for the shower-pattered case in both the source tube and the diffusion chamber, compared with the center hole case, suggesting that the neutral density profile significantly affects the plasma density profile. This result will provide an improvement in the thruster performance by the gas injection pattern.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"33 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142268305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasma simulation of HF plasma generated in dual-frequency chamber for high aspect ratio dielectric etching 用于高纵横比介质蚀刻的双频腔室中产生的高频等离子体的等离子模拟
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-17 DOI: 10.35848/1347-4065/ad6e91
Shigeyuki Takagi, Shih-Nan Hsiao, Chih-Yu Ma, Makoto Sekine and Fumihiko Matsunaga
{"title":"Plasma simulation of HF plasma generated in dual-frequency chamber for high aspect ratio dielectric etching","authors":"Shigeyuki Takagi, Shih-Nan Hsiao, Chih-Yu Ma, Makoto Sekine and Fumihiko Matsunaga","doi":"10.35848/1347-4065/ad6e91","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6e91","url":null,"abstract":"For the 3D NAND memory hole with a high aspect ratio above 100, the etching process with hydrogen-fluoride (HF) contained plasmas has been proposed. We have developed a simulation model for gas-phase reactions that reproduces the HF plasma in experiments. The HF plasma was generated using a power supply of 100 MHz frequency, and electron and F densities were measured. The simulation model was constructed on the basis of the collision cross sections and reaction constants reported in the previous papers, and the F density in the simulation was calibrated by comparing it with that in the experiments. As a result of the plasma simulation, the densities of F and the electrons were determined to be 7.52 × 1016 m–3 and 8.50 × 1016 m–3, respectively. Taking into consideration the errors in the experiment, we considered that the simulation model is able to reproduce the experimental HF plasma well.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"20 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142268306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface 二氧化硅帽退火对在掺镁 p 型氮化镓表面形成的 MOS 接口的影响
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-17 DOI: 10.35848/1347-4065/ad750d
Yining Jiao, Masanobu Takahashi, Taketomo Sato and Masamichi Akazawa
{"title":"Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface","authors":"Yining Jiao, Masanobu Takahashi, Taketomo Sato and Masamichi Akazawa","doi":"10.35848/1347-4065/ad750d","DOIUrl":"https://doi.org/10.35848/1347-4065/ad750d","url":null,"abstract":"In this paper, we report the effects of 800 °C SiO2 cap annealing on the Al2O3/p-type GaN (p-GaN):Mg and SiO2/p-GaN:Mg interfaces formed at relatively low temperatures, as determined by X-ray photoelectron spectroscopy (XPS) and sub-bandgap-light-assisted capacitance–voltage (C–V) measurement. For the sample with capless annealing at 800 °C and subsequent HF treatment before the Al2O3/p-GaN interface formation by atomic layer deposition at 300 °C, its C–V characteristics indicated the existence of high-density midgap states. By SiO2 cap annealing and subsequent HF treatment to remove the cap layer, we found that the Al2O3/p-GaN interface showed a reduction in midgap state density. The same effect was confirmed at the SiO2/p-GaN interface. Taking this finding and XPS results together, we consider the possibility that SiO2 cap annealing at 800 °C and the subsequent HF treatment prior to the formation of the Al2O3/p-GaN and SiO2/p-GaN interfaces led to the reduction of interface disorder.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"13 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142247982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation conditions of the tungsten porous thin film with pulsed laser deposition under various gas atmosphere 不同气体环境下脉冲激光沉积钨多孔薄膜的形成条件
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-17 DOI: 10.35848/1347-4065/ad759a
S. Kodate, Q. Shi and S. Kajita
{"title":"Formation conditions of the tungsten porous thin film with pulsed laser deposition under various gas atmosphere","authors":"S. Kodate, Q. Shi and S. Kajita","doi":"10.35848/1347-4065/ad759a","DOIUrl":"https://doi.org/10.35848/1347-4065/ad759a","url":null,"abstract":"Pulsed laser deposition (PLD) under gas atmospheres has been used to fabricate thin films for various applications. In this study, PLD was performed under various gas atmospheres (helium, oxygen, and argon) using tungsten (W) to investigate the morphology of thin films. Various types of structures were formed, including uniform, nanoparticles, and columnar structures. In particular, the substrate fabricated at an argon pressure of 100 Pa had a high porosity and a low light reflectance in the 200–1400 nm wavelength range. In addition, it was shown that the growth of the thin film thickness was non-linear with respect to time, and the formation of a fuzz-like structure may be influenced by particle diffusion in the gas phase and on the substrate.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"190 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142247980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rotary pump using underwater electrical discharge 利用水下放电的旋转泵
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-17 DOI: 10.35848/1347-4065/ad7553
Hideyuki Sugioka, Daisuke Sumida and Kazuma Matsuo
{"title":"Rotary pump using underwater electrical discharge","authors":"Hideyuki Sugioka, Daisuke Sumida and Kazuma Matsuo","doi":"10.35848/1347-4065/ad7553","DOIUrl":"https://doi.org/10.35848/1347-4065/ad7553","url":null,"abstract":"Powerful micropumps and water treatment are essential for biomedical applications using microfluidic circuits. Therefore, we propose a rotary pump using underwater electrical discharge for biomedical applications and elucidate its design concept. Specifically, we demonstrate that by applying high-voltage pulses repeatedly, the rotary device having an asymmetrical antenna structure can rotate with the maximum angular velocity of ∼25 rad s−1, and can produce a net flow with an average velocity of ∼3.2 mm s−1 along with an instantaneous maximum flow of ∼9 mm s−1. In addition, we explain our experimental results fairly well by proposing a simple model that considers the effects of asymmetricity and electric field strength with a steric effect. Our findings should contribute to the microfluidics for biomedical applications.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"17 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142247978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MoS2 synthesis on fluorine-terminated Si substrates prepared by SF6 mixed gas plasma 在用 SF6 混合气体等离子体制备的氟封端硅基底上合成 MoS2
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-17 DOI: 10.35848/1347-4065/ad750c
Akihisa Ogino, Yuto Kato and Ryotaro Kito
{"title":"MoS2 synthesis on fluorine-terminated Si substrates prepared by SF6 mixed gas plasma","authors":"Akihisa Ogino, Yuto Kato and Ryotaro Kito","doi":"10.35848/1347-4065/ad750c","DOIUrl":"https://doi.org/10.35848/1347-4065/ad750c","url":null,"abstract":"MoS2 synthesis methods with fewer grain boundaries are expected for device applications. To control the nucleation density and to increase the domain size of MoS2 on a Si substrate, MoS2 was synthesized on a fluorine-terminated Si substrate prepared by SF6 mixed gas plasma. The average domain size of monolayer MoS2 synthesized on a fluorine-terminated Si substrate was several times larger than that on a pristine Si substrate, and grain boundaries were reduced. The MoS2 synthesized on the fluorine-terminated substrate was found to have improved crystallinity based on the results of Raman and photoluminescence spectroscopy. XPS analysis showed that no residual fluoride was observed on the substrate surface after CVD, suggesting that fluorine atoms were volatilized together with Mo by chemical reaction during CVD. Fluorine-terminated surfaces prepared by SF6 mixed gas plasma contribute to increasing the domain size of MoS2, and it can be applied for selective growth in the subsequent CVD synthesis of MoS2.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"14 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142247981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET 厚 N 极 AlN 生长对 N 极 GaN/AlGaN/AlN FET 晶体质量和电气特性的影响
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-16 DOI: 10.35848/1347-4065/ad6e8f
Aina Hiyama Zazuli, Taketo Kowaki, Minagi Miyamoto, Koki Hanasaku, Daisuke Inahara, Kai Fujii, Taisei Kimoto, Ryosuke Ninoki, Satoshi Kurai, Narihito Okada and Yoichi Yamada
{"title":"Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET","authors":"Aina Hiyama Zazuli, Taketo Kowaki, Minagi Miyamoto, Koki Hanasaku, Daisuke Inahara, Kai Fujii, Taisei Kimoto, Ryosuke Ninoki, Satoshi Kurai, Narihito Okada and Yoichi Yamada","doi":"10.35848/1347-4065/ad6e8f","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6e8f","url":null,"abstract":"In this study, we attempted to fabricate N-polar GaN/AlGaN/AlN heterostructure FET by changing the thickness of the AlN layer. An Al-polar tiny-pit AlN layer and a polarity inversion method were used to grow N-polar AlN on vicinal sapphire via the metal-organic vapor phase epitaxy. The samples with an AlN thickness of up to 3.4 μm exhibited a crack-free surface. Additionally, the twist component of the crystal quality improved with an increasing AlN thickness. Consequently, the mobility, sheet conductivity, and surface flatness improved. The FET fabricated from the sample with a thicker AlN layer achieved a higher drain current of 279 mA mm−1 at a gate bias of VG = 3 V.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"3 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142247983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The study of propagation characteristics of the millimeter-wave vortex in magnetized plasma by using the FDTD method 利用 FDTD 方法研究磁化等离子体中毫米波涡旋的传播特性
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-16 DOI: 10.35848/1347-4065/ad6e94
Chenxu Wang, Hideki Kawaguchi, Hiroaki Nakamura and Shin Kubo
{"title":"The study of propagation characteristics of the millimeter-wave vortex in magnetized plasma by using the FDTD method","authors":"Chenxu Wang, Hideki Kawaguchi, Hiroaki Nakamura and Shin Kubo","doi":"10.35848/1347-4065/ad6e94","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6e94","url":null,"abstract":"It is pointed out that the millimeter-wave vortex may contribute to an efficient method of plasma heating since it was found that the millimeter-wave vortex can propagate in magnetized plasma even in which the normal plane wave is in cut-off condition. Then, it was assumed that the vortex field was the Laguerre–Gaussian (L–G) mode which is a free-space solution, but the generation and stable propagation of the L–G mode vortex are not easy in the millimeter frequency range. On the other hand, it is known that the millimeter-wave hybrid mode of the cylindrical corrugated waveguide also has vortex properties. In this paper, we investigate the propagation characteristics of a millimeter-wave vortex of a hybrid mode of a cylindrical corrugated waveguide in the magnetized plasma by using three-dimensional numerical simulations with the finite-difference time-domain (FDTD) method. It is found that the millimeter-wave vortex of hybrid mode also can propagate in the magnetized plasma even in a condition in which the normal plane wave is in cut-off condition, and the propagation power in the plasma is highly dependent on the topological charge l.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"116 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142247988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quasi-bound states in the continuum induced by in-plane and out-of-plane asymmetry in all-dielectric metasurfaces 全介电元表面面内和面外不对称诱导的连续体中的准约束态
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-16 DOI: 10.35848/1347-4065/ad74c4
Yiran Zhou, Bo Ni, Haibin Ni, Xiaoyan Zhou, Lingsheng Yang and Jianhua Chang
{"title":"Quasi-bound states in the continuum induced by in-plane and out-of-plane asymmetry in all-dielectric metasurfaces","authors":"Yiran Zhou, Bo Ni, Haibin Ni, Xiaoyan Zhou, Lingsheng Yang and Jianhua Chang","doi":"10.35848/1347-4065/ad74c4","DOIUrl":"https://doi.org/10.35848/1347-4065/ad74c4","url":null,"abstract":"In this paper, we propose a periodic structure consisting of a pair of square holes etched through square silicon substrates to achieve a high-Q quasi-BIC resonance peak at 1524 nm. The simulation results indicate that the Q factor of the excited quasi-BIC can reach 12,660. Multipole decomposition and near-field distribution show that the quasi-BIC of the square etched hole structure is primarily dominated by magnetic dipoles, electric quadrupoles, and magnetic quadrupoles. When structural parameters shift in other directions, or when the square hole is rotated or changed to a circle, this quasi-BIC demonstrates good robustness.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"22 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142247986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability analysis of output electrical response performance of multi-state flexoelectric structures under single and multiple failure modes 多态柔电结构在单一和多重失效模式下输出电气响应性能的可靠性分析
IF 1.5 4区 物理与天体物理
Japanese Journal of Applied Physics Pub Date : 2024-09-16 DOI: 10.35848/1347-4065/ad7004
Xiao-Xiao Liu, Yang-Bing Xu, Cheng Han and Feng Zhang
{"title":"Reliability analysis of output electrical response performance of multi-state flexoelectric structures under single and multiple failure modes","authors":"Xiao-Xiao Liu, Yang-Bing Xu, Cheng Han and Feng Zhang","doi":"10.35848/1347-4065/ad7004","DOIUrl":"https://doi.org/10.35848/1347-4065/ad7004","url":null,"abstract":"This paper proposes a reliability model of flexoelectric beams in the electrical open and short circuit states when different failure modes and the multiple failure modes of the output electrical response performances are considered, respectively. The reliability indices of the flexoelectric beams in the two circuit states can be defined based on the output electrical response models. Sequentially, the importance sampling (IS) and the mixed importance sampling (IS) methods are respectively used to calculate the reliability of the flexoelectric beams in single and multiple failure modes. The reliability results of the flexoelectric beams are verified by comparing them with the results of the Monte Carlo Simulation (MCS). The numerical results show that the flexoelectric beam is entered into a relatively safe and reliable state when the critical value of the open circuit voltage of 0.235 V and the thickness of the flexoelectric beams of 1 mm are considered as well as the length-thickness ratio of 20.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142247985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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