厚 N 极 AlN 生长对 N 极 GaN/AlGaN/AlN FET 晶体质量和电气特性的影响

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-09-16 DOI:10.35848/1347-4065/ad6e8f

Aina Hiyama Zazuli, Taketo Kowaki, Minagi Miyamoto, Koki Hanasaku, Daisuke Inahara, Kai Fujii, Taisei Kimoto, Ryosuke Ninoki, Satoshi Kurai, Narihito Okada and Yoichi Yamada

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引用次数: 0

摘要

在这项研究中，我们尝试通过改变氮化镓层的厚度来制造 N 极 GaN/AlGaN/AlN 异质结构场效应晶体管。通过金属有机气相外延技术，我们在沧桑蓝宝石上使用了铝极性微坑 AlN 层和极性反转方法来生长 N 极性 AlN。AlN 厚度达 3.4 μm 的样品表面无裂纹。此外，随着 AlN 厚度的增加，晶体质量的扭曲成分也有所改善。因此，迁移率、薄片电导率和表面平整度也得到了改善。在栅极偏压为 VG = 3 V 时，用更厚 AlN 层的样品制造的 FET 的漏极电流高达 279 mA mm-1。

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Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET

In this study, we attempted to fabricate N-polar GaN/AlGaN/AlN heterostructure FET by changing the thickness of the AlN layer. An Al-polar tiny-pit AlN layer and a polarity inversion method were used to grow N-polar AlN on vicinal sapphire via the metal-organic vapor phase epitaxy. The samples with an AlN thickness of up to 3.4 μm exhibited a crack-free surface. Additionally, the twist component of the crystal quality improved with an increasing AlN thickness. Consequently, the mobility, sheet conductivity, and surface flatness improved. The FET fabricated from the sample with a thicker AlN layer achieved a higher drain current of 279 mA mm−1 at a gate bias of VG = 3 V.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS