Xiao-Xiao Liu, Yang-Bing Xu, Cheng Han and Feng Zhang
{"title":"多态柔电结构在单一和多重失效模式下输出电气响应性能的可靠性分析","authors":"Xiao-Xiao Liu, Yang-Bing Xu, Cheng Han and Feng Zhang","doi":"10.35848/1347-4065/ad7004","DOIUrl":null,"url":null,"abstract":"This paper proposes a reliability model of flexoelectric beams in the electrical open and short circuit states when different failure modes and the multiple failure modes of the output electrical response performances are considered, respectively. The reliability indices of the flexoelectric beams in the two circuit states can be defined based on the output electrical response models. Sequentially, the importance sampling (IS) and the mixed importance sampling (IS) methods are respectively used to calculate the reliability of the flexoelectric beams in single and multiple failure modes. The reliability results of the flexoelectric beams are verified by comparing them with the results of the Monte Carlo Simulation (MCS). The numerical results show that the flexoelectric beam is entered into a relatively safe and reliable state when the critical value of the open circuit voltage of 0.235 V and the thickness of the flexoelectric beams of 1 mm are considered as well as the length-thickness ratio of 20.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reliability analysis of output electrical response performance of multi-state flexoelectric structures under single and multiple failure modes\",\"authors\":\"Xiao-Xiao Liu, Yang-Bing Xu, Cheng Han and Feng Zhang\",\"doi\":\"10.35848/1347-4065/ad7004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a reliability model of flexoelectric beams in the electrical open and short circuit states when different failure modes and the multiple failure modes of the output electrical response performances are considered, respectively. The reliability indices of the flexoelectric beams in the two circuit states can be defined based on the output electrical response models. Sequentially, the importance sampling (IS) and the mixed importance sampling (IS) methods are respectively used to calculate the reliability of the flexoelectric beams in single and multiple failure modes. The reliability results of the flexoelectric beams are verified by comparing them with the results of the Monte Carlo Simulation (MCS). The numerical results show that the flexoelectric beam is entered into a relatively safe and reliable state when the critical value of the open circuit voltage of 0.235 V and the thickness of the flexoelectric beams of 1 mm are considered as well as the length-thickness ratio of 20.\",\"PeriodicalId\":14741,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1347-4065/ad7004\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad7004","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Reliability analysis of output electrical response performance of multi-state flexoelectric structures under single and multiple failure modes
This paper proposes a reliability model of flexoelectric beams in the electrical open and short circuit states when different failure modes and the multiple failure modes of the output electrical response performances are considered, respectively. The reliability indices of the flexoelectric beams in the two circuit states can be defined based on the output electrical response models. Sequentially, the importance sampling (IS) and the mixed importance sampling (IS) methods are respectively used to calculate the reliability of the flexoelectric beams in single and multiple failure modes. The reliability results of the flexoelectric beams are verified by comparing them with the results of the Monte Carlo Simulation (MCS). The numerical results show that the flexoelectric beam is entered into a relatively safe and reliable state when the critical value of the open circuit voltage of 0.235 V and the thickness of the flexoelectric beams of 1 mm are considered as well as the length-thickness ratio of 20.
期刊介绍:
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS