气体注入模式对磁膨胀射频等离子体源的影响

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, APPLIED
Yugo Nakahama and Kazunori Takahashi
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引用次数: 0

摘要

氩气从一个有径向中心孔或喷淋式八孔的背板注入一个直径为 13.3 厘米、长 25 厘米的射频(rf)等离子源,该等离子源连接到一个直径为 43.7 厘米、长 65 厘米的扩散室,扩散室在一个不断扩大的磁场作用下,类似于磁性喷嘴射频等离子推进器。该源有一个双圈环形天线,由一个 13.56 MHz 射频发生器供电,在低压氩气中的最大功率水平约为 2.8 kW,在源内提供约 1018 m-3 的等离子体密度。与中心孔情况相比,在源管和扩散室中的喷淋散射情况下获得了较高的等离子体密度和稍低的电子温度,这表明中性密度剖面对等离子体密度剖面有显著影响。这一结果将通过气体注入模式改善推进器的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of gas injection pattern on magnetically expanding rf plasma source
Argon gas is injected from a back plate having either a radial center hole or shower-patterned eight holes into a 13.3-cm-diameter and 25-cm-long radio frequency (rf) plasma source attached to a 43.7-cm-diameter and 65cm-long diffusion chamber under an expanding magnetic field, which resembles the magnetic nozzle rf plasma thruster. The source has a double-turn loop antenna powered by a 13.56 MHz rf generator at a maximum power level of ~2.8 kW in low-pressure argon, providing a plasma density of about 1018 m−3 in the source. A high plasma density and a slightly low electron temperature are obtained for the shower-pattered case in both the source tube and the diffusion chamber, compared with the center hole case, suggesting that the neutral density profile significantly affects the plasma density profile. This result will provide an improvement in the thruster performance by the gas injection pattern.
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来源期刊
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics 物理-物理:应用
CiteScore
3.00
自引率
26.70%
发文量
818
审稿时长
3.5 months
期刊介绍: The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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