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2014 11th International Workshop on Low Temperature Electronics (WOLTE)最新文献

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Hgcdte avalanche photodiodes: Application for infra-red detection Hgcdte雪崩光电二极管:用于红外探测
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881011
J. Rothman, K. Foubert, L. Mollard, N. Péré-Laperne, F. Salvetti, A. Kerlain, Y. Reibel
{"title":"Hgcdte avalanche photodiodes: Application for infra-red detection","authors":"J. Rothman, K. Foubert, L. Mollard, N. Péré-Laperne, F. Salvetti, A. Kerlain, Y. Reibel","doi":"10.1109/WOLTE.2014.6881011","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881011","url":null,"abstract":"HgCdTe avalanche photodiode focal plane arrays (FPAs) and single element detectors have been developed for a large scope of photon starved applications. The present communication present the characteristics of our most recent detector developments that opens the horizon of low infrared (IR) photon number detection with high information conservation for imaging, atmospheric lidar and free space telecommunications. In particular, we report on the performance of TEC cooled large detectors with sensitive diameters ranging from 30-200 μm characterised by detector gains of 2-20 V/μW W and noise equivalent input power of 0.1-1 nWfor bandwidth ranging from 20-400 MHz.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122960874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Spectroscopic analysis of leakage current of pre- and post-stressed sol-gel-based TiO2 and SiO2/TiO2 stack films 溶胶-凝胶基TiO2和SiO2/TiO2叠合膜的应力前后泄漏电流光谱分析
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881027
Y. Omura, Y. Kondo
{"title":"Spectroscopic analysis of leakage current of pre- and post-stressed sol-gel-based TiO2 and SiO2/TiO2 stack films","authors":"Y. Omura, Y. Kondo","doi":"10.1109/WOLTE.2014.6881027","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881027","url":null,"abstract":"This paper investigates the trap property of pre-and post-stressed TiO2/SiO2 stacks by the spectroscopic analysis of the leakage current. It is suggested that transport is ruled by the space-charge-limited current controlled by negative-charged traps. Spectroscopic analysis of the current fluctuation demonstrates that after stress application the current path varies with the polarity of the top electrode; this suggests that there are at least two-different paths inside the degraded TiO2/SiO2 stack.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"192 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121529600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The contact hyperfine interaction and the integer and fractional quantum Hall effects 接触超精细相互作用与整数和分数量子霍尔效应
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881023
D. Maude, B. Piot, W. Desrat
{"title":"The contact hyperfine interaction and the integer and fractional quantum Hall effects","authors":"D. Maude, B. Piot, W. Desrat","doi":"10.1109/WOLTE.2014.6881023","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881023","url":null,"abstract":"The single particle and many body physics behind the the integer and fractional quantum Hall effects is reviewed. We explain how the composite Fermion picture of Jain describes the fractional quantum Hall effect in terms of an integer quantum Hall effect of non interacting composite fermions and provides an intuitive understanding of spin reversed fractions and competing ground states. The contact hyperfine interaction between the nuclear and electronic spins can be used to probe the electronic spin polarization of the quantum Hall system via the Knight shift of the resistively detected NMR. Finally, we describe how pulsed resistively detected NMR on gated samples can be used to probe quantum Hall states (filling factors) which have zero resistance or are not sensitive to the electronic Zeeman energy.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122710065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A quantum device driven by an on-chip CMOS ring oscillator 一种由片上CMOS环形振荡器驱动的量子器件
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881029
P. Clapera, S. Ray, X. Jehl, M. Sanquer, A. Valentian, S. Barraud
{"title":"A quantum device driven by an on-chip CMOS ring oscillator","authors":"P. Clapera, S. Ray, X. Jehl, M. Sanquer, A. Valentian, S. Barraud","doi":"10.1109/WOLTE.2014.6881029","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881029","url":null,"abstract":"We present the co-integration of a ring-oscillator based CMOS circuit purposely designed to drive RF signals onto the gates of a single-electron device. It is fabricated on 300 mm wafers with the nanowire silicon-on-insulator technology and operated at cryogenic temperatures. Using the same technology for both the classical circuit and the quantum device is a unique opportunity which is implemented by simply changing the width of the field-effect transistors. While 25 nm widths yield devices behaving as quantum devices, 1μm relaxed widths guarantee a safe operation of the CMOS circuit since its components behave as regular Field-Effect transistors. We demonstrate the operation of the circuit at low temperature and observed the generation of DC currents in the absence of any applied DC bias. The generated DC current can be well explained in the framework of a rectification model [8]. The successful operation of such a co-integrated circuit can be very promising for future integration of quantum nanoelectronic devices.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134326843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Characterization and modeling of resistive-transition phenomena and electronic structure of sputter-deposition SiO2 films 溅射沉积SiO2薄膜的电阻跃迁现象和电子结构表征与建模
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881028
R. Yamaguchi, S. Sato, Y. Omura, K. Nakamura
{"title":"Characterization and modeling of resistive-transition phenomena and electronic structure of sputter-deposition SiO2 films","authors":"R. Yamaguchi, S. Sato, Y. Omura, K. Nakamura","doi":"10.1109/WOLTE.2014.6881028","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881028","url":null,"abstract":"This paper investigates the electronic structures of sputter-deposition SiO2 films in low-resistance state and high-resistance state at room temperature and low temperature. The electronic structure of post-resistive transition is also characterized spectroscopically by means of the current fluctuation.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131684530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Analog operation of Junctionless Nanowire Transistors down to liquid helium temperature 模拟无结纳米线晶体管在液氦温度下的运行
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881024
R. Trevisoli, M. de Souza, R. Doria, V. Kilchtyska, D. Flandre, M. Pavanello
{"title":"Analog operation of Junctionless Nanowire Transistors down to liquid helium temperature","authors":"R. Trevisoli, M. de Souza, R. Doria, V. Kilchtyska, D. Flandre, M. Pavanello","doi":"10.1109/WOLTE.2014.6881024","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881024","url":null,"abstract":"The aim of this work is to analyze the analog operation of Junctionless Nanowire Transistors at temperatures down to liquid helium temperature. The analysis is performed in terms of the transconductance, open loop voltage gain and output conductance for experimental long channel devices. It is shown that the temperature reduction can affect significantly the analog performance of the devices.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122672557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defects study in IR SWIR HgCdTe photodetectors using DLTS 基于DLTS的红外SWIR HgCdTe光电探测器缺陷研究
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881013
A. Brunner, L. Rubaldo, J. Berthoz, D. Bauza, G. Reimbold
{"title":"Defects study in IR SWIR HgCdTe photodetectors using DLTS","authors":"A. Brunner, L. Rubaldo, J. Berthoz, D. Bauza, G. Reimbold","doi":"10.1109/WOLTE.2014.6881013","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881013","url":null,"abstract":"The traps in IR SWIR HgCdTe n+/p photodetectors are studied using DLTS. Two hole trap are found, one at low temperature (Ea≈ 0.19 eV) and the other above 250K. The low temperature peak is found to allow the fitting of dark current data recorded from different samples.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114594621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cryogenic GaN/AlGaN HEMT ICs and fabrication probability of monolithic sensor of super- and semiconductor devices 超低温GaN/AlGaN HEMT集成电路及超半导体器件单片传感器的制造可能性
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881017
Y. Hibi, Jiandong Sun, H. Qin, H. Matsuo, L. Kang, Jing Chen, Peiheng Wu
{"title":"Cryogenic GaN/AlGaN HEMT ICs and fabrication probability of monolithic sensor of super- and semiconductor devices","authors":"Y. Hibi, Jiandong Sun, H. Qin, H. Matsuo, L. Kang, Jing Chen, Peiheng Wu","doi":"10.1109/WOLTE.2014.6881017","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881017","url":null,"abstract":"GaN/AlGaN HEMTs are usually used as high speed circuit elements and fabricated onto silicon or sapphire substrate. Since they also show good cryogenic properties even in low power condition (~1 μW/1 HEMT), we designed and fabricated some GaN/AlGaN HEMT integrated circuits. By using source follower with sample-and-hold which is one of the ICs, performance as source follower and sample-and-hold is confirmed. Now we have investigated how to fabricate superconductor devices onto the substrate which GaN/AlGaN HEMT devices are already fabricated. When we realize this technique, some new monolitic instruments with super- and semiconductor devices may be made come true.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126764371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-temperature characterization of hall and effective mobility in junctionless transistors 无结晶体管中霍尔和有效迁移率的低温特性
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881032
Min-Kyu Joo, M. Mouis, B. Piot, S. Barraud, M. Shin, Gyu-Tae Kim, G. Ghibaudo
{"title":"Low-temperature characterization of hall and effective mobility in junctionless transistors","authors":"Min-Kyu Joo, M. Mouis, B. Piot, S. Barraud, M. Shin, Gyu-Tae Kim, G. Ghibaudo","doi":"10.1109/WOLTE.2014.6881032","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881032","url":null,"abstract":"The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μ<sub>Eff</sub>) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N<sub>s</sub>) and corresponding Hall mobility (μ<sub>Hall</sub>) Hall Effect measurements were carried out and compared to μ<sub>Eff</sub>.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115265532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling and characterization of MTF at small pitch on Mercury Cadmium Telluride 碲化汞镉小间距MTF的建模与表征
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881012
J. Berthoz, L. Rubaldo, I. R. Grille, O. Gravrand
{"title":"Modeling and characterization of MTF at small pitch on Mercury Cadmium Telluride","authors":"J. Berthoz, L. Rubaldo, I. R. Grille, O. Gravrand","doi":"10.1109/WOLTE.2014.6881012","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881012","url":null,"abstract":"Reduction of pixel pitch in infrared detector improves the spatial resolution and the range. The key performance of the detector range is the modulation transfer function (MTF). In an ideal case MTF can be express as the Fourier transformation of its square response. For small pixel, electrical lateral diffusion tends to reduce MTF from its ideal value. Computation shows that at 10μm the MTF is better than at 15μm for a given frequency. However, because of electric lateral diffusion, MTF at 10μm is more distant from its ideal value. Computations show that mesa can be used to have a better MTF.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130319618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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