Cryogenic GaN/AlGaN HEMT ICs and fabrication probability of monolithic sensor of super- and semiconductor devices

Y. Hibi, Jiandong Sun, H. Qin, H. Matsuo, L. Kang, Jing Chen, Peiheng Wu
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Abstract

GaN/AlGaN HEMTs are usually used as high speed circuit elements and fabricated onto silicon or sapphire substrate. Since they also show good cryogenic properties even in low power condition (~1 μW/1 HEMT), we designed and fabricated some GaN/AlGaN HEMT integrated circuits. By using source follower with sample-and-hold which is one of the ICs, performance as source follower and sample-and-hold is confirmed. Now we have investigated how to fabricate superconductor devices onto the substrate which GaN/AlGaN HEMT devices are already fabricated. When we realize this technique, some new monolitic instruments with super- and semiconductor devices may be made come true.
超低温GaN/AlGaN HEMT集成电路及超半导体器件单片传感器的制造可能性
GaN/AlGaN hemt通常用作高速电路元件,制作在硅或蓝宝石衬底上。由于GaN/AlGaN在低功率条件下(~1 μW/1 HEMT)也具有良好的低温性能,我们设计并制作了一些GaN/AlGaN HEMT集成电路。通过将源从动器和采样保持器作为集成电路之一,验证了源从动器和采样保持器的性能。现在,我们研究了如何在已经制造出GaN/AlGaN HEMT器件的衬底上制造超导体器件。当我们实现这一技术时,一些新型的带有超半导体器件的单片仪器可能会成为现实。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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