Min-Kyu Joo, M. Mouis, B. Piot, S. Barraud, M. Shin, Gyu-Tae Kim, G. Ghibaudo
{"title":"无结晶体管中霍尔和有效迁移率的低温特性","authors":"Min-Kyu Joo, M. Mouis, B. Piot, S. Barraud, M. Shin, Gyu-Tae Kim, G. Ghibaudo","doi":"10.1109/WOLTE.2014.6881032","DOIUrl":null,"url":null,"abstract":"The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μ<sub>Eff</sub>) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N<sub>s</sub>) and corresponding Hall mobility (μ<sub>Hall</sub>) Hall Effect measurements were carried out and compared to μ<sub>Eff</sub>.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low-temperature characterization of hall and effective mobility in junctionless transistors\",\"authors\":\"Min-Kyu Joo, M. Mouis, B. Piot, S. Barraud, M. Shin, Gyu-Tae Kim, G. Ghibaudo\",\"doi\":\"10.1109/WOLTE.2014.6881032\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μ<sub>Eff</sub>) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N<sub>s</sub>) and corresponding Hall mobility (μ<sub>Hall</sub>) Hall Effect measurements were carried out and compared to μ<sub>Eff</sub>.\",\"PeriodicalId\":144827,\"journal\":{\"name\":\"2014 11th International Workshop on Low Temperature Electronics (WOLTE)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 11th International Workshop on Low Temperature Electronics (WOLTE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOLTE.2014.6881032\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOLTE.2014.6881032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-temperature characterization of hall and effective mobility in junctionless transistors
The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (Ns) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
