基于DLTS的红外SWIR HgCdTe光电探测器缺陷研究

A. Brunner, L. Rubaldo, J. Berthoz, D. Bauza, G. Reimbold
{"title":"基于DLTS的红外SWIR HgCdTe光电探测器缺陷研究","authors":"A. Brunner, L. Rubaldo, J. Berthoz, D. Bauza, G. Reimbold","doi":"10.1109/WOLTE.2014.6881013","DOIUrl":null,"url":null,"abstract":"The traps in IR SWIR HgCdTe n+/p photodetectors are studied using DLTS. Two hole trap are found, one at low temperature (Ea≈ 0.19 eV) and the other above 250K. The low temperature peak is found to allow the fitting of dark current data recorded from different samples.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Defects study in IR SWIR HgCdTe photodetectors using DLTS\",\"authors\":\"A. Brunner, L. Rubaldo, J. Berthoz, D. Bauza, G. Reimbold\",\"doi\":\"10.1109/WOLTE.2014.6881013\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The traps in IR SWIR HgCdTe n+/p photodetectors are studied using DLTS. Two hole trap are found, one at low temperature (Ea≈ 0.19 eV) and the other above 250K. The low temperature peak is found to allow the fitting of dark current data recorded from different samples.\",\"PeriodicalId\":144827,\"journal\":{\"name\":\"2014 11th International Workshop on Low Temperature Electronics (WOLTE)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 11th International Workshop on Low Temperature Electronics (WOLTE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOLTE.2014.6881013\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOLTE.2014.6881013","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

利用DLTS研究了红外SWIR HgCdTe n+/p光电探测器中的陷阱。发现了两个空穴阱,一个在低温(Ea≈0.19 eV),另一个在250K以上。发现低温峰允许从不同样品记录的暗电流数据的拟合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Defects study in IR SWIR HgCdTe photodetectors using DLTS
The traps in IR SWIR HgCdTe n+/p photodetectors are studied using DLTS. Two hole trap are found, one at low temperature (Ea≈ 0.19 eV) and the other above 250K. The low temperature peak is found to allow the fitting of dark current data recorded from different samples.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信