A. Brunner, L. Rubaldo, J. Berthoz, D. Bauza, G. Reimbold
{"title":"基于DLTS的红外SWIR HgCdTe光电探测器缺陷研究","authors":"A. Brunner, L. Rubaldo, J. Berthoz, D. Bauza, G. Reimbold","doi":"10.1109/WOLTE.2014.6881013","DOIUrl":null,"url":null,"abstract":"The traps in IR SWIR HgCdTe n+/p photodetectors are studied using DLTS. Two hole trap are found, one at low temperature (Ea≈ 0.19 eV) and the other above 250K. The low temperature peak is found to allow the fitting of dark current data recorded from different samples.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Defects study in IR SWIR HgCdTe photodetectors using DLTS\",\"authors\":\"A. Brunner, L. Rubaldo, J. Berthoz, D. Bauza, G. Reimbold\",\"doi\":\"10.1109/WOLTE.2014.6881013\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The traps in IR SWIR HgCdTe n+/p photodetectors are studied using DLTS. Two hole trap are found, one at low temperature (Ea≈ 0.19 eV) and the other above 250K. The low temperature peak is found to allow the fitting of dark current data recorded from different samples.\",\"PeriodicalId\":144827,\"journal\":{\"name\":\"2014 11th International Workshop on Low Temperature Electronics (WOLTE)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 11th International Workshop on Low Temperature Electronics (WOLTE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOLTE.2014.6881013\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOLTE.2014.6881013","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Defects study in IR SWIR HgCdTe photodetectors using DLTS
The traps in IR SWIR HgCdTe n+/p photodetectors are studied using DLTS. Two hole trap are found, one at low temperature (Ea≈ 0.19 eV) and the other above 250K. The low temperature peak is found to allow the fitting of dark current data recorded from different samples.