溅射沉积SiO2薄膜的电阻跃迁现象和电子结构表征与建模

2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI:10.1109/WOLTE.2014.6881028

R. Yamaguchi, S. Sato, Y. Omura, K. Nakamura

{"title":"溅射沉积SiO2薄膜的电阻跃迁现象和电子结构表征与建模","authors":"R. Yamaguchi, S. Sato, Y. Omura, K. Nakamura","doi":"10.1109/WOLTE.2014.6881028","DOIUrl":null,"url":null,"abstract":"This paper investigates the electronic structures of sputter-deposition SiO2 films in low-resistance state and high-resistance state at room temperature and low temperature. The electronic structure of post-resistive transition is also characterized spectroscopically by means of the current fluctuation.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Characterization and modeling of resistive-transition phenomena and electronic structure of sputter-deposition SiO2 films\",\"authors\":\"R. Yamaguchi, S. Sato, Y. Omura, K. Nakamura\",\"doi\":\"10.1109/WOLTE.2014.6881028\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigates the electronic structures of sputter-deposition SiO2 films in low-resistance state and high-resistance state at room temperature and low temperature. The electronic structure of post-resistive transition is also characterized spectroscopically by means of the current fluctuation.\",\"PeriodicalId\":144827,\"journal\":{\"name\":\"2014 11th International Workshop on Low Temperature Electronics (WOLTE)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 11th International Workshop on Low Temperature Electronics (WOLTE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOLTE.2014.6881028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOLTE.2014.6881028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

本文研究了溅射沉积SiO2薄膜在室温和低温下的低阻态和高阻态的电子结构。利用电流波动对后阻跃迁的电子结构进行了光谱表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Characterization and modeling of resistive-transition phenomena and electronic structure of sputter-deposition SiO2 films

This paper investigates the electronic structures of sputter-deposition SiO2 films in low-resistance state and high-resistance state at room temperature and low temperature. The electronic structure of post-resistive transition is also characterized spectroscopically by means of the current fluctuation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 11th International Workshop on Low Temperature Electronics (WOLTE)

自引率

0.00%

发文量