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2014 11th International Workshop on Low Temperature Electronics (WOLTE)最新文献

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On the possibility of creating superconducting spin valve of a new type 论制造新型超导自旋阀的可能性
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881022
Yu. V. Goryunov
{"title":"On the possibility of creating superconducting spin valve of a new type","authors":"Yu. V. Goryunov","doi":"10.1109/WOLTE.2014.6881022","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881022","url":null,"abstract":"At present two construction of superconducting spin valve are known on the proximity effect base in layered superconductor - ferromagnetic system. We suppose third construction of such device with inhomogeneous magnetization along ferromagnetic layer.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115624505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental estimation of optical NEP of 350GHz CEB bolometer 350GHz CEB辐射计光学NEP的实验估计
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881030
A. Mukhin, A. E. Abashin, O. Bolshakov, I. Lesnov, A. A. Shishov
{"title":"Experimental estimation of optical NEP of 350GHz CEB bolometer","authors":"A. Mukhin, A. E. Abashin, O. Bolshakov, I. Lesnov, A. A. Shishov","doi":"10.1109/WOLTE.2014.6881030","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881030","url":null,"abstract":"We have constructed an experimental setup for estimation of optical response of 350 GHz Cold-electron bolometer(CEB) integrated in cross-slot antenna for planned high altitude balloon-born telescope BOOMERANG. The experimental setup based on dilution cryostat Triton 200 with 10mK base temperature. Our sensor consist of CEB sensor integrated in cross-slot antenna with 350GHz central frequency. Actual spectral band was reduced by quasioptical filters placed in front of detector. We constructed high sensitive low noise readout circuit based on room-temperature JFET operational amplifiers with optimal noise match with detector resistance in optimal working point. We constructed advanced geometry black body radiator with tuned temperature for optical measurements with needed background power load.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131046040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Real-time multi-pixel readout of superconducting nanowire single-photon detectors 超导纳米线单光子探测器的实时多像素读出
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881019
M. Hofherr, K. Ilin, J. Toussaint, T. Ortlepp, O. Wetzstein, S. Engert, H. Meyer, H. Topfer, M. Siegel
{"title":"Real-time multi-pixel readout of superconducting nanowire single-photon detectors","authors":"M. Hofherr, K. Ilin, J. Toussaint, T. Ortlepp, O. Wetzstein, S. Engert, H. Meyer, H. Topfer, M. Siegel","doi":"10.1109/WOLTE.2014.6881019","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881019","url":null,"abstract":"Nowadays detection systems based on superconducting nanowire single-photon detectors (SNSPD) are mainly with a single-pixel detector. Multi-pixel systems would extend the field of possible applications. Therefore, new concepts are required for effective readout of multi-pixel SNSPDs. We give an overview of possible concepts, conditions of operation and dedicated effort to optimize the requirements of different applications in the single-photon regime.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128511577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature characterization of 14nm FDSOI CMOS devices 14nm FDSOI CMOS器件的低温特性
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881018
M. Shin, M. Shi, M. Mouis, A. Cros, E. Josse, G. Kim, G. Ghibaudo
{"title":"Low temperature characterization of 14nm FDSOI CMOS devices","authors":"M. Shin, M. Shi, M. Mouis, A. Cros, E. Josse, G. Kim, G. Ghibaudo","doi":"10.1109/WOLTE.2014.6881018","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881018","url":null,"abstract":"A detailed characterization of low temperature operation of n and p MOS devices from 14nm FDSOI CMOS technology has been conducted. The transfer characteristics measured between 77K and 300K exhibit very good performance for effective gate lengths down 15nm, emphasizing the very good control of short channel effects and subthreshold behavior. Moreover, the temperature dependence of the low field mobility clearly indicates that, for long devices, it is limited by phonon scatterings whereas, for sub 100nm gate lengths, the mobility is significantly degraded and almost independent with temperature. This feature is attributed to scattering by neutral defects, which are originated from source and drain process and extending over several tens of nm along the channel.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131572571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 47
Low temperature characterization of CVD graphene devices fabricated with a scalable process route 采用可扩展工艺路线制备CVD石墨烯器件的低温表征
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881033
O. I. Aydin, M. Mouis, A. Cresti, B. Piot, T. Hallam, J. Thomassin, G. Duesberg
{"title":"Low temperature characterization of CVD graphene devices fabricated with a scalable process route","authors":"O. I. Aydin, M. Mouis, A. Cresti, B. Piot, T. Hallam, J. Thomassin, G. Duesberg","doi":"10.1109/WOLTE.2014.6881033","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881033","url":null,"abstract":"This paper deals with the low temperature characterization of graphene devices fabricated on CVD graphene via a scalable route. Longitudinal resistivity and Hall resistance of Hall bar structures were measured at 4 K and 20 K while sweeping magnetic fields up to 11 T. Features in the magnetic field dependence of longitudinal resistivity were interpreted in terms of weak localization and Landau level position. We extracted carrier density and mobility values for our devices, and interpreted the behavior of resistivity against magnetic field and temperature. Furthermore, we discussed the impacts of synthesis and fabrication on the mobility of graphene. Finally, we were able to gain information on the underlying scattering by analyzing the magnetic field and temperature dependences of the longitudinal resistance.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134594519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A single-stage cryogenic LNA with low power consumption using a commercial SiGe HBT 采用商用SiGe HBT的低功耗单级低温LNA
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881015
H. Mani, P. Mauskopf
{"title":"A single-stage cryogenic LNA with low power consumption using a commercial SiGe HBT","authors":"H. Mani, P. Mauskopf","doi":"10.1109/WOLTE.2014.6881015","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881015","url":null,"abstract":"A cryogenically cooled low noise amplifier (LNA) has been designed, built and tested at the Astronomy Instrumentation Laboratory at Arizona State University. The LNA uses low cost, off the shelf commercially available low noise SiGe hetero junction bipolar transistor (HBT) in a single stage surface mount package. The built LNA has been measured in a calibrated noise/gain/S-parameters setup and the data shows the LNA has a noise temperature of as low as 5K (or about 0.074dB noise figure) and more than 20dB of Gain on the 100MHz-1GHz band. The input and output of the LNA are matched to 50 Ohm, an S11 and S22 of less than -10dB at most frequencies have been measured. All these parameters were measured at different transistor bias points and power dissipations. The amplifier was operated at as low as 0.7mW power dissipation with a measured 8K of noise (or about 0.12dB Noise figure) and 20dB of Gain at 500MHz. The developed amplifier offered good performance at an extremely low cost and with a very short development time, this amplifier can be useful to a variety low temperature physics experiments.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128508364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Development of NTD Ge sensors for low temperature thermometry 低温测温用NTD锗传感器的研制
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881014
S. Mathimalar, V. Singh, N. Dokania, V. Nanal, R. G. Pillay, S. Pal, S. Ramakrishnan, A. Shrivastava, P. Maheshwari, P. K. Pujari, S. Oiha, D. Kaniilal, K. C. Jagadeesan, S. V. Thakare
{"title":"Development of NTD Ge sensors for low temperature thermometry","authors":"S. Mathimalar, V. Singh, N. Dokania, V. Nanal, R. G. Pillay, S. Pal, S. Ramakrishnan, A. Shrivastava, P. Maheshwari, P. K. Pujari, S. Oiha, D. Kaniilal, K. C. Jagadeesan, S. V. Thakare","doi":"10.1109/WOLTE.2014.6881014","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881014","url":null,"abstract":"The development of NTD Ge sensors for use in cryogenic bolometric detector to search for neutrinoless double beta decay (Ovββ) in 124Sn is reported. The samples made from device grade Ge wafers are irradiated with thermal neutrons at Dhruva reactor, Bhabha Atomic Research Centre (BARC), Mumbai. The carrier concentration in irradiated Ge samples is estimated by Hall effect measurement at 77K. The fast neutron induced defects are studied using Positron Annihilation Lifetime Spectroscopy and Channeling. It is found that vacuum annealing of the samples at 600°C for 2 hours is necessary to cure the defects. Sensors are made from annealed NTD samples using Au-Ge Ohmic contact. Preliminary measurements have shown a significantly large dR/dT ~ 2.3 kΩ/mK at 100 mK. Details of these measurements are presented.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115241558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Superconductor digital electronics technology for sensor interfacing at the FLUXONICS Foundry 超导数字电子技术的传感器接口在FLUXONICS代工厂
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881021
J. Kunert, O. Brandel, S. Linzen, T. May, R. Stolz, H. Meyer
{"title":"Superconductor digital electronics technology for sensor interfacing at the FLUXONICS Foundry","authors":"J. Kunert, O. Brandel, S. Linzen, T. May, R. Stolz, H. Meyer","doi":"10.1109/WOLTE.2014.6881021","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881021","url":null,"abstract":"The integration of superconductor digital electronics together with superconducting sensors can enable smart multi-channel sensor arrays. Applications of such sensors range from basic astrophysical research to advanced security screening devices. The main advantage of superconducting sensor interfaces is the very low power consumption in combination with a very low noise level; both are required in order to keep the excellent superconducting sensor performance without distortions. The FLUXONICS Foundry technology has been optimized with respect to electronic interfaces circuits for analogue sensor readout and signal multiplexing. In this work, we describe this new interface technology and present a comparison with our standard RSFQ technology.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126265706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Porous silicon as an efficient local thermal isolation platform on the Si wafer in the temparature range 5–350k 多孔硅在5-350k温度范围内作为硅片上有效的局部热隔离平台
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881026
K. Valalaki, A. Nassiopoulou
{"title":"Porous silicon as an efficient local thermal isolation platform on the Si wafer in the temparature range 5–350k","authors":"K. Valalaki, A. Nassiopoulou","doi":"10.1109/WOLTE.2014.6881026","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881026","url":null,"abstract":"The thermal conductivity of highly porous Si was determined in the temperature range 5-350K. It was found that its temperature dependence is monotonic in the range 20-350K, while below 20K it shows a plateau-like behavior similar to that observed in amorphous materials. The low values of the thermal conductivity of the material in the whole temperature range studied, extended also to cryogenic temperatures, make porous Si an excellent local substrate for providing efficient thermal isolation on the Si wafer for the on-chip integration of heating and cooling devices.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"249 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132046702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Digital controlling of superconducting current steering switches 超导电流转向开关的数字化控制
2014 11th International Workshop on Low Temperature Electronics (WOLTE) Pub Date : 2014-07-07 DOI: 10.1109/WOLTE.2014.6881020
O. Brandel, J. Kunert, T. May, T. Ortlepp, H. Toepfer, H. Meyer
{"title":"Digital controlling of superconducting current steering switches","authors":"O. Brandel, J. Kunert, T. May, T. Ortlepp, H. Toepfer, H. Meyer","doi":"10.1109/WOLTE.2014.6881020","DOIUrl":"https://doi.org/10.1109/WOLTE.2014.6881020","url":null,"abstract":"Large arrays of superconducting radiation sensors require a multiplexed readout. One implementation of the promising code division multiplexing technique uses current steering switches (CSSs) based on superconducting quantum interference devices (SQUIDs). We pursue the concept of utilizing rapid single flux quantum (RSFQ) electronics to control these switches, where each SQUID of a CSS is inductively coupled to the storing loop of a delay flip-flop. The internal state of this digital logic element is represented by the presence of a magnetic flux quantum, which is destined to control the CSS.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133808758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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