S. Mathimalar, V. Singh, N. Dokania, V. Nanal, R. G. Pillay, S. Pal, S. Ramakrishnan, A. Shrivastava, P. Maheshwari, P. K. Pujari, S. Oiha, D. Kaniilal, K. C. Jagadeesan, S. V. Thakare
{"title":"低温测温用NTD锗传感器的研制","authors":"S. Mathimalar, V. Singh, N. Dokania, V. Nanal, R. G. Pillay, S. Pal, S. Ramakrishnan, A. Shrivastava, P. Maheshwari, P. K. Pujari, S. Oiha, D. Kaniilal, K. C. Jagadeesan, S. V. Thakare","doi":"10.1109/WOLTE.2014.6881014","DOIUrl":null,"url":null,"abstract":"The development of NTD Ge sensors for use in cryogenic bolometric detector to search for neutrinoless double beta decay (Ovββ) in 124Sn is reported. The samples made from device grade Ge wafers are irradiated with thermal neutrons at Dhruva reactor, Bhabha Atomic Research Centre (BARC), Mumbai. The carrier concentration in irradiated Ge samples is estimated by Hall effect measurement at 77K. The fast neutron induced defects are studied using Positron Annihilation Lifetime Spectroscopy and Channeling. It is found that vacuum annealing of the samples at 600°C for 2 hours is necessary to cure the defects. Sensors are made from annealed NTD samples using Au-Ge Ohmic contact. Preliminary measurements have shown a significantly large dR/dT ~ 2.3 kΩ/mK at 100 mK. Details of these measurements are presented.","PeriodicalId":144827,"journal":{"name":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Development of NTD Ge sensors for low temperature thermometry\",\"authors\":\"S. Mathimalar, V. Singh, N. Dokania, V. Nanal, R. G. Pillay, S. Pal, S. Ramakrishnan, A. Shrivastava, P. Maheshwari, P. K. Pujari, S. Oiha, D. Kaniilal, K. C. Jagadeesan, S. V. Thakare\",\"doi\":\"10.1109/WOLTE.2014.6881014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development of NTD Ge sensors for use in cryogenic bolometric detector to search for neutrinoless double beta decay (Ovββ) in 124Sn is reported. The samples made from device grade Ge wafers are irradiated with thermal neutrons at Dhruva reactor, Bhabha Atomic Research Centre (BARC), Mumbai. The carrier concentration in irradiated Ge samples is estimated by Hall effect measurement at 77K. The fast neutron induced defects are studied using Positron Annihilation Lifetime Spectroscopy and Channeling. It is found that vacuum annealing of the samples at 600°C for 2 hours is necessary to cure the defects. Sensors are made from annealed NTD samples using Au-Ge Ohmic contact. Preliminary measurements have shown a significantly large dR/dT ~ 2.3 kΩ/mK at 100 mK. Details of these measurements are presented.\",\"PeriodicalId\":144827,\"journal\":{\"name\":\"2014 11th International Workshop on Low Temperature Electronics (WOLTE)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 11th International Workshop on Low Temperature Electronics (WOLTE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOLTE.2014.6881014\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 11th International Workshop on Low Temperature Electronics (WOLTE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOLTE.2014.6881014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of NTD Ge sensors for low temperature thermometry
The development of NTD Ge sensors for use in cryogenic bolometric detector to search for neutrinoless double beta decay (Ovββ) in 124Sn is reported. The samples made from device grade Ge wafers are irradiated with thermal neutrons at Dhruva reactor, Bhabha Atomic Research Centre (BARC), Mumbai. The carrier concentration in irradiated Ge samples is estimated by Hall effect measurement at 77K. The fast neutron induced defects are studied using Positron Annihilation Lifetime Spectroscopy and Channeling. It is found that vacuum annealing of the samples at 600°C for 2 hours is necessary to cure the defects. Sensors are made from annealed NTD samples using Au-Ge Ohmic contact. Preliminary measurements have shown a significantly large dR/dT ~ 2.3 kΩ/mK at 100 mK. Details of these measurements are presented.
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