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Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)最新文献

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A simple method in sizing related to the reliability supply of small stand-alone photovoltaic systems 小型独立光伏系统可靠性供电的一种简单方法
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916212
S. Saengthong, S. Premrudeepreechacham
{"title":"A simple method in sizing related to the reliability supply of small stand-alone photovoltaic systems","authors":"S. Saengthong, S. Premrudeepreechacham","doi":"10.1109/PVSC.2000.916212","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916212","url":null,"abstract":"This paper presents a simple method for sizing small stand-alone photovoltaic systems that match with the load and the desired reliability level. In this paper, the authors use various load profiles of usage of mobile telephone for remote area and the reliability measures in term of loss of load probability (LOLP). The solar radiation uses as initial input to the systems. Then, they simulate the system behavior by hourly time step to estimate energy that can produce by systems. From the simulation result, it is shown that the desired high reliability level, which does not match with solar radiation, can result in system over size. The advantage of hourly time step calculation is able to estimate reliability supply in term of loss of load probability at any times.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123935319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Powersphere Power System demonstration station Powersphere电力系统示范站
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916146
A. Prater, E. Simburger, Dennis A. Smith, J. Matsumoto, C. Truong, J. Ross, D. Scott
{"title":"Powersphere Power System demonstration station","authors":"A. Prater, E. Simburger, Dennis A. Smith, J. Matsumoto, C. Truong, J. Ross, D. Scott","doi":"10.1109/PVSC.2000.916146","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916146","url":null,"abstract":"The PowerSphere Power System, and in particular, its power management and distribution (PMAD) architecture was conceived to be a solution to provide adequate power for micro-satellite and nano-satellite spacecrafts. The PowerSphere Power System, which was introduced at the 1999 IECEC in the Aerospace Power Management Session, is a means to deploy a large area of thin film solar cells with minimum weight on a sphere that requires no pointing and that can be sized for various desired power levels. This paper reports on the PMAD architecture for the electrical property characterization of a typical DC-DC converter chosen for the PowerSphere Power System. The solar array portion of the development station consists of a combination of 32 pentagonal and hexagonal shaped thin-film amorphous silicon solar cells mounted on an aluminum buckyball sphere approximately two feet in diameter. The buckyball sphere is mounted on a motorized drive mechanism to provide some degree of rotational movement, limited only by the wiring harness. The solar cells are electrically connected in pairs so those on opposite faces feed an individual integrated circuit DC-DC converter unit.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121220801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fast deposition of /spl mu/c-Si:H films from Ar-diluted SiH/sub 4/ plasma in RF glow discharge ar稀释SiH/sub - 4/等离子体在射频辉光放电条件下快速沉积/spl mu/c-Si:H薄膜
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916012
D. Das, M. Jana, A. K. Barua
{"title":"Fast deposition of /spl mu/c-Si:H films from Ar-diluted SiH/sub 4/ plasma in RF glow discharge","authors":"D. Das, M. Jana, A. K. Barua","doi":"10.1109/PVSC.2000.916012","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916012","url":null,"abstract":"Using Ar as diluent for SiH/sub 4/ in RF glow discharge, we obtained undoped and doped /spl mu/c-Si:H films having high /spl sigma//sub D/ low /spl Delta/E and low /spl alpha/; exhibiting sharp crystallographic rings in the electron diffraction pattern, c-Si grains of 100 /spl Aring/ diameter in the micrograph and intense Raman peak around 520 cm/sup -1/. The films were prepared at a remarkably high deposition rate of 50-70 /spl Aring//min contributed from SiH/sub 4/ having a flow rate of 1 SCCM, and hence it provides enormous promise towards an economic throughput in the fabrication of devices using this material.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"21 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113978122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence of CdTe:Cu and CdS:Cu [for solar cells] CdTe:Cu和CdS:Cu的光致发光[用于太阳能电池]
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915946
K. Price, D. Grecu, D. Shvydka, A. Compaan
{"title":"Photoluminescence of CdTe:Cu and CdS:Cu [for solar cells]","authors":"K. Price, D. Grecu, D. Shvydka, A. Compaan","doi":"10.1109/PVSC.2000.915946","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915946","url":null,"abstract":"The authors present results of Cu-related photoluminescence on CdTe and CdS single crystals doped by diffusion of thermally evaporated Cu. In CdTe:Cu their results are consistent with some Cu atoms occupying substitutional positions on the Cd sublattice and with others forming Frenkel pairs involving an interstitial Cu and a Cd vacancy. In addition, they find that Cu-related states in CdTe:Cu samples exhibit a significant reversible \"aging\" behavior. In CdS:Cu, the main effect of Cu diffusion is a quenching of the photoluminescence. They also show evidence of an exciton bound to a Cu-related site that is stable under short-term light illumination. In addition, a donor-acceptor pair transition may be observed in CdS:Cu using excitation energies below the transition emission energy. They show that the results are related to stability behavior of CdTe-CdS solar cells using Cu as a back contact.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114880878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon solar cell process monitoring by PV-reflectometer 用pv反射计监测硅太阳能电池过程
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915769
B. Sopori, Yi Zhang, Wei Chen, J. Madjdpour
{"title":"Silicon solar cell process monitoring by PV-reflectometer","authors":"B. Sopori, Yi Zhang, Wei Chen, J. Madjdpour","doi":"10.1109/PVSC.2000.915769","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915769","url":null,"abstract":"A new instrument, the PV-reflectometer, is developed for process control and monitoring in PV industry. This system can rapidly measure a host of parameters averaged over the entire wafer/cell. Here we describe the main features of the instrument and its applications for monitoring various Si solar cell fabrication processes, including sawing, texturing, AR coating, and front and back metallization.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"360 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124534772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Role of sodium in the control of defect structures in CIS [solar cells] 钠在控制CIS[太阳能电池]缺陷结构中的作用
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915864
B. Stanbery, S. Kincal, S. Kim, T. Anderson, O. Crisalle, S. P. Ahrenkiel, G. Lippold
{"title":"Role of sodium in the control of defect structures in CIS [solar cells]","authors":"B. Stanbery, S. Kincal, S. Kim, T. Anderson, O. Crisalle, S. P. Ahrenkiel, G. Lippold","doi":"10.1109/PVSC.2000.915864","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915864","url":null,"abstract":"The authors have grown CIS epitaxial films on single-crystal GaAs substrates under conditions that enhance the influence of surface effects on the resulting structures and their properties. There is a pronounced morphological dichotomy between indium-rich and copper-rich films. In addition, epilayers with nominally identical compositions and morphologies can exhibit fundamentally different ordering of the lattice in either the equilibrium chalcopyrite (CH) or metastable CuAu (CA) structure. The addition of sodium to In-rich CulnSe/sub 2/ epilayers during the initial stages of epitaxy both suppresses the formation of metastable Cu-CuInSe/sub 2/ and dramatically changes the film morphology. They discuss these results in the context of recent theories of island nucleation and their hypothesis that sodium acts as a surfactant during the growth of CuInSe/sub 2/ by destabilizing the (ln/sub Cu/+2V/sub Cu/) defect associate-complex in the near-surface transition layer, rejecting excess indium from the bulk of the growing film.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126288332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Specific PVMAT R&D on Siemens CZ silicon product manufacturing 针对西门子CZ硅产品制造的PVMAT专项研发
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916154
T. Jester
{"title":"Specific PVMAT R&D on Siemens CZ silicon product manufacturing","authors":"T. Jester","doi":"10.1109/PVSC.2000.916154","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916154","url":null,"abstract":"Work at Siemens Solar Industries in manufacturing cost reduction has shown highly leveraging benefits in producing thinner solar cells, larger area solar cells, and introducing back surface field processes which increase efficiency. About half of the cost to produce a solar module is incurred by the time a wafer is produced, and another 20% is added in the cell processing steps. In large area wafer and cell production, the manufacturing costs are almost linearly reduced by increasing the area of the wafer, this benefit is compounded as the wafers are made thinner. Siemens Solar Industries has studied, developed and piloted processes for 250 micron thickness cells, in both 103 mm cell and 150 mm sizes. SSI has also started the development efforts for increasing cell size to 200 mm diameter. The benefit can be a cost reduction as high as 25-30% on the $/Watt production level. Implementation in manufacturing is the key driver for success in achieving this cost reduction potential.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126487510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Performance monitoring of a northern 3.2 kWp grid-connected photovoltaic system 北方3.2 kWp并网光伏系统性能监测
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916233
D. Thevenard, L. Dignard-Bailey, S. Martel, D. Turcotte
{"title":"Performance monitoring of a northern 3.2 kWp grid-connected photovoltaic system","authors":"D. Thevenard, L. Dignard-Bailey, S. Martel, D. Turcotte","doi":"10.1109/PVSC.2000.916233","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916233","url":null,"abstract":"This paper summarizes five years of monitoring of a facade-mounted grid-connected system in Canada's far North. The system has been in operation since July 1995 and has delivered around 2 MWh of electrical power on an annual basis since then. Climatic and solar radiation conditions at the site are reviewed, and the performance of the system is assessed from a component perspective (PV array, power conditioning unit) and from a global perspective (AC power delivered to the grid, system efficiency, system reliability).","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128086721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
The effect of SiH/sub 4/ flow and H/sub 2/ dilution on hot-wire /spl mu/c-Si:H and a-Si:H films SiH/sub - 4/流动和H/sub - 2/稀释对hot-wire /spl μ /c-Si:H和a-Si:H薄膜的影响
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916028
J. Lee, G. Kang, S. Kim, K. Yoon, Jinsoo Song, I. Park
{"title":"The effect of SiH/sub 4/ flow and H/sub 2/ dilution on hot-wire /spl mu/c-Si:H and a-Si:H films","authors":"J. Lee, G. Kang, S. Kim, K. Yoon, Jinsoo Song, I. Park","doi":"10.1109/PVSC.2000.916028","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916028","url":null,"abstract":"The effects of SiH/sub 4/ flow and H/sub 2/ dilution on the hot wire silicon films have been studied in this paper. The Si films deposited at low SiH/sub 4/ flow (1 to 7 sccm) have distinct Raman TO mode peak near 520 cm/sup -1/ even at no H/sub 2/ dilution. The microcrystalline to amorphous phase transition, however, occurred at increased SiH/sub 4/ flow above than 10 sccm. The added H/sub 2/ gas does not contribute to the crystallinity improvement of the samples deposited at low SiH/sub 4/ flow while the amorphous films are crystallized as the high H/sub 2/ gases are employed. On the contrary, when the deposition time increased, the crystalline properties are greatly improved; crystalline volume fraction reached up to 75% without H/sub 2/ dilution. The electrical properties and hydrogen bonding configuration as functions of SiH/sub 4/ flow and different dilution conditions are also discussed in the paper.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128173965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fuzzy modeling of photovoltaic panel equivalent circuit 光伏板等效电路的模糊建模
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916219
T.F. Elshatter, M. Elhagry, E. Abou-Elzahab, A. Elkousy
{"title":"Fuzzy modeling of photovoltaic panel equivalent circuit","authors":"T.F. Elshatter, M. Elhagry, E. Abou-Elzahab, A. Elkousy","doi":"10.1109/PVSC.2000.916219","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916219","url":null,"abstract":"For simulation purposes of photovoltaic (PV) power systems using MATLAB and for online application, the different parameters of the PV panel have to be known at the specific operating point. The parameters of interest are the photon current, the series and shunt resistances, the ideality factor, and the diode reverse saturation current. Hence the different parameters have to be known at all operating condition which is practically not available in many cases. So, in this paper the authors introduce a new type of data analysis that express these parameters by means of a fuzzy regression model. The available PV array under consideration is defined by the manufacturer data sheet which specifies the panel under a narrow range of operating conditions. A fuzzy model has been developed for the aforementioned PV arrays. The model has been validated using a set of data that have been obtained at their site or obtained from extrapolating data from the manufacturer data sheet.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128196925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
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