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Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)最新文献

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Temperature dependence at various intrinsic a-Si:H growth rates of p-i-n deposited solar cells p-i-n沉积太阳能电池不同内禀a-Si:H生长速率的温度依赖性
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916033
B. Korevaar, C. Smit, A. Smets, R. van Swaaij, D. Schram, M. V. D. van de Sanden
{"title":"Temperature dependence at various intrinsic a-Si:H growth rates of p-i-n deposited solar cells","authors":"B. Korevaar, C. Smit, A. Smets, R. van Swaaij, D. Schram, M. V. D. van de Sanden","doi":"10.1109/PVSC.2000.916033","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916033","url":null,"abstract":"With a cascaded arc expanding thermal plasma, intrinsic solar grade amorphous silicon can be deposited at growth rates varying from 2 to 100 /spl Aring//s. The temperature above which good material is obtained becomes higher for higher growth rates. Higher deposition temperatures affect the p-layer within p-i-n grown solar cells, which will result in other optimum deposition temperatures of the i-layer. In this paper, the authors address the dependence of the p-i-n solar cell performance on the deposition rate and deposition temperature.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126734680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Detailed accounting for quantum efficiency and optical losses in a-Si:H based solar cells a-Si:H基太阳能电池的量子效率和光损耗的详细计算
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916019
P. Lechner, R. Geyer, H. Schade, B. Rech, J. Muller
{"title":"Detailed accounting for quantum efficiency and optical losses in a-Si:H based solar cells","authors":"P. Lechner, R. Geyer, H. Schade, B. Rech, J. Muller","doi":"10.1109/PVSC.2000.916019","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916019","url":null,"abstract":"By using TCO front contact layers with increasing haze, but constant \"true\" absorbance, the effect of light scattering on the generated solar cell current can be evaluated independently of usually compensating effects. The increase in light scattering results in a higher quantum efficiency, due to increased light trapping and reduced reflectance at the TCO/p-layer interface, but also in higher optical losses, due to increased absorbances in the nonphotoactive layers, and multiple reflections at the back reflector. The difference between the effective transmission of the TCO and the quantum efficiency represents the optical losses that are individually accounted for. The analysis is based on measurements that for proper accounting are required to be performed on the same area portions of the glass/TCO substrate and subsequently deposited cells.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122218579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Use of a gas jet deposition technique to prepare microcrystalline Si solar cells 利用气体喷射沉积技术制备微晶硅太阳能电池
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915772
S.J. Jones, R. Crucet, M. Izu
{"title":"Use of a gas jet deposition technique to prepare microcrystalline Si solar cells","authors":"S.J. Jones, R. Crucet, M. Izu","doi":"10.1109/PVSC.2000.915772","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915772","url":null,"abstract":"A gas jet deposition technique has been used to prepare microcrystalline Si (/spl mu/c-Si) i-layers for nip solar cells at rates of 15 /spl Aring//s. The red light absorbing capabilities make these cells an attractive alternative to a-SiGe in high efficiency multi-junction structures. The high deposition rates allow for fabrication of the required thick /spl mu/c-Si i-layers in a similar amount of time to those used for high quality a-SiGe i-layers (rates of 1-3 /spl Aring//s). Using a 610 nm cutoff filter which only allows red light to strike the device, pre-light soaked short circuit currents of 8-10 mA/cm/sup 2/ and 2.7% red-light efficiencies have been obtained while AM1.5 white light efficiencies are above 7%. These efficiencies on average degrade only by 2% (stabilized efficiencies of 2.6%) after long-term light soaking (1000 hrs.). This small amount of degradation compares with the 15-17% degradation in efficiencies for a-SiGe cells subjected to similar irradiation treatments (final light-soaked red light efficiencies of 3.2%). Using the /spl mu/c-Si nip structure as the bottom cell of an a-Si//spl mu/c-Si tandem-junction cell, pre-light soaking AM1.5 efficiencies of 9.8% have been achieved.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129617682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Light trapping and reflection control for silicon thin films deposited on glass substrates textured by embossing 压纹玻璃基板上硅薄膜的光捕获和反射控制
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915837
P. Campbell, M. Keevers
{"title":"Light trapping and reflection control for silicon thin films deposited on glass substrates textured by embossing","authors":"P. Campbell, M. Keevers","doi":"10.1109/PVSC.2000.915837","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915837","url":null,"abstract":"A glass substrate texture of pyramids formed by embossing, suitable for polycrystalline silicon solar cells 5-20 /spl mu/m thick, is described. A monocrystalline silicon wafer textured with inverted pyramids was used as a die. We evaluate antireflection and light trapping properties for an undoped a-Si:H silicon film (volumetric thickness 5.6 /spl mu/m; no reflector) simultaneously deposited on this texture and sandblasted glass, using total reflectance and transmittance measurements. J/sub sc/ enhancement potential from light trapping in equally thick polycrystalline silicon films on the same substrates is estimated to be 6.7 (sandblasted), 8.7 (embossed) mA/cm/sup 2/. Light trapping characteristics obtained by spectral photoconductance measurements of the specimens are compared.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129844102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
ISO 14000 introduction in the photovoltaic industry ISO 14000在光伏行业的引入
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916172
M. Rosenblum, R.L. Brown, R. Gonsiorawski, J. Kalejs
{"title":"ISO 14000 introduction in the photovoltaic industry","authors":"M. Rosenblum, R.L. Brown, R. Gonsiorawski, J. Kalejs","doi":"10.1109/PVSC.2000.916172","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916172","url":null,"abstract":"ASE Americas has initiated a program to become certified under the ISO 14001 environmental management system. Background information is provided about the ISO 14000 series of standards, along with benefits resulting from certification. Details specific to the efforts being undertaken at our facility to become ISO 14001 certified are given. A gap audit has been conducted to assess our current state of readiness in advance of the registration process: highlights of the findings are presented. We then highlight several processes which have been developed and implemented at ASE to abate the environmental impact of PV manufacturing and address product life cycle concerns. Foremost among these are pioneering work on the use of lead-free solder paste for cell interconnect, and development of new technology to reduce the volume of acids used in manufacturing in the areas of wafer etching/cleaning and phosphorus glass etching.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128226360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Concepts for integrating PV into rural Alaskan housing and utilities 将光伏整合到阿拉斯加农村住房和公用事业的概念
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916188
R. Seifert
{"title":"Concepts for integrating PV into rural Alaskan housing and utilities","authors":"R. Seifert","doi":"10.1109/PVSC.2000.916188","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916188","url":null,"abstract":"Alaska has been included in the establishments of coalitions around the country for the Million Solar Roofs Initiative. One of the major problems is enhancing the credibility of solar energy for applications in Alaska, particularly photovoltaic applications. A fertile approach to achieving this, is to integrate photovoltaics into the building stock in Alaska. In order to do this competently and cleverly we need to have a clear understanding of solar geometries and the natural conditions in Alaska from a climatic point of view, which will affect the performance of those photovoltaic systems in a building context. The author discusses Alaskan solar geometry (low sun angles) and implications for building design.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129280876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mars Array Technology Experiment (MATE) [space power solar cell performance] 火星阵列技术实验(MATE)[空间动力太阳能电池性能]
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916145
D. Scheiman, P. Jenkins, G. Landis, C. Baraona, D. Wilt, M. Krasowski, L. Greer, J. Lekki, D. Spina
{"title":"Mars Array Technology Experiment (MATE) [space power solar cell performance]","authors":"D. Scheiman, P. Jenkins, G. Landis, C. Baraona, D. Wilt, M. Krasowski, L. Greer, J. Lekki, D. Spina","doi":"10.1109/PVSC.2000.916145","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916145","url":null,"abstract":"Airborne and settled dust on the surface of Mars alters the sunlight and fluctuates from day to day, it affects both the intensity and spectral content. Future missions to Mars are considering solar power and therefore solar cell technologies must be evaluated to find the optimum. The MATE flight experiment was designed for this purpose as part of the Mars In-Situ Propellant Production Precursor (MIP) package destined to fly on the now defunct '01 Lander. MATE will measure the performance of several solar cell technologies and characterize the Martian environment in terms of solar power. This will be done by measuring full IV curves on solar cells, direct and global insolation, temperature, and spectral content. MATE is qualified for a site location near the equator for 100 to 300 days. The intent of this paper is to provide a brief overview of this experiment.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129352165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Rapid optimization of CdTe/sub (1-x)/S/sub x/ absorber films and PV devices by means of the combinatorial method 利用组合方法快速优化CdTe/sub (1-x)/S/sub x/吸收膜和PV器件
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915880
J. Hanak, E. Bykov, H. Elgamel, D. Grecu, J. Putt, N. Reiter, D. Shvydka, R. Powell
{"title":"Rapid optimization of CdTe/sub (1-x)/S/sub x/ absorber films and PV devices by means of the combinatorial method","authors":"J. Hanak, E. Bykov, H. Elgamel, D. Grecu, J. Putt, N. Reiter, D. Shvydka, R. Powell","doi":"10.1109/PVSC.2000.915880","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915880","url":null,"abstract":"This paper reports on the development of alloy absorber films of CdTe/sub (1-x)/S/sub x/ by means of the combinatorial method (CM) and the vapor transport deposition (VTD). Alloy films of CdTe/sub (1-x)/S/sub x/ had been shown to be effective as a barrier against inter-diffusion between the semiconductor films, thereby facilitating the use of thin CdS \"window\" film and leading to enhanced photocurrent and efficiency of PV cells. CM is also used to improve the PV devices by rapid optimization of other film parameters including thickness, deposition temperature, E/sub g/, and surface texture and by making the process suitable for high-throughput PV manufacturing environment.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124582139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Interfacial optical spectra in amorphous silicon based pin solar cells 非晶硅基引脚太阳能电池的界面光谱
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915976
K. Zhu, J. Lyou, E. Schiff, R. Crandall, G. Ganguly, S. Hegedus
{"title":"Interfacial optical spectra in amorphous silicon based pin solar cells","authors":"K. Zhu, J. Lyou, E. Schiff, R. Crandall, G. Ganguly, S. Hegedus","doi":"10.1109/PVSC.2000.915976","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915976","url":null,"abstract":"We present infrared transmittance and reflection modulation spectra for changes in the reverse bias voltage across a variety of amorphous silicon (a-Si:H) based pin and min solar cells and diodes. The spectra originate with the change in charge state of levels near the two intrinsic-layer interfaces. The spectra vary significantly for differing interfaces, and we therefore propose their application to ex situ monitoring of the interfaces in solar cell manufacturing. The measurements also support the model that phosphorus doping occurs through dopant complex formation at the concentrations commonly used for solar cell fabrication.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130223714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum dot intermediate band solar cell 量子点中间带太阳能电池
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916039
A. Martí, L. Cuadra, A. Luque
{"title":"Quantum dot intermediate band solar cell","authors":"A. Martí, L. Cuadra, A. Luque","doi":"10.1109/PVSC.2000.916039","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916039","url":null,"abstract":"This paper discusses the possibility of manufacturing the intermediate band solar cell (IBSC), a cell with the potential of achieving 63.2% of efficiency under concentrated sunlight, using quantum dot technology. The 0-dimensionality nature of the dots avoids electron thermalisation between bands enhancing the possibilities for radiative recombination between bands and making possible the existence of three quasi-fermi levels, some of the pivots the theory of the IBSC is sustained on. In this sense, it is suggested that an InGaAs/AlGaAs system could be used for band engineering the optimum bandgaps of the IBSC cell (0.71 and 1.24 eV). Dots should be about 40 /spl Aring/ of radius, spaced in the range of 100 /spl Aring/ and distributed in a three dimensional array. The Stranski and Krastanow method is proposed as a technology for achieving this goal. The possibility of n-doping the dots is also discussed.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127033505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 147
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