Temperature dependence at various intrinsic a-Si:H growth rates of p-i-n deposited solar cells

Abstract

With a cascaded arc expanding thermal plasma, intrinsic solar grade amorphous silicon can be deposited at growth rates varying from 2 to 100 /spl Aring//s. The temperature above which good material is obtained becomes higher for higher growth rates. Higher deposition temperatures affect the p-layer within p-i-n grown solar cells, which will result in other optimum deposition temperatures of the i-layer. In this paper, the authors address the dependence of the p-i-n solar cell performance on the deposition rate and deposition temperature.