{"title":"压纹玻璃基板上硅薄膜的光捕获和反射控制","authors":"P. Campbell, M. Keevers","doi":"10.1109/PVSC.2000.915837","DOIUrl":null,"url":null,"abstract":"A glass substrate texture of pyramids formed by embossing, suitable for polycrystalline silicon solar cells 5-20 /spl mu/m thick, is described. A monocrystalline silicon wafer textured with inverted pyramids was used as a die. We evaluate antireflection and light trapping properties for an undoped a-Si:H silicon film (volumetric thickness 5.6 /spl mu/m; no reflector) simultaneously deposited on this texture and sandblasted glass, using total reflectance and transmittance measurements. J/sub sc/ enhancement potential from light trapping in equally thick polycrystalline silicon films on the same substrates is estimated to be 6.7 (sandblasted), 8.7 (embossed) mA/cm/sup 2/. Light trapping characteristics obtained by spectral photoconductance measurements of the specimens are compared.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Light trapping and reflection control for silicon thin films deposited on glass substrates textured by embossing\",\"authors\":\"P. Campbell, M. Keevers\",\"doi\":\"10.1109/PVSC.2000.915837\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A glass substrate texture of pyramids formed by embossing, suitable for polycrystalline silicon solar cells 5-20 /spl mu/m thick, is described. A monocrystalline silicon wafer textured with inverted pyramids was used as a die. We evaluate antireflection and light trapping properties for an undoped a-Si:H silicon film (volumetric thickness 5.6 /spl mu/m; no reflector) simultaneously deposited on this texture and sandblasted glass, using total reflectance and transmittance measurements. J/sub sc/ enhancement potential from light trapping in equally thick polycrystalline silicon films on the same substrates is estimated to be 6.7 (sandblasted), 8.7 (embossed) mA/cm/sup 2/. Light trapping characteristics obtained by spectral photoconductance measurements of the specimens are compared.\",\"PeriodicalId\":139803,\"journal\":{\"name\":\"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2000.915837\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2000.915837","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Light trapping and reflection control for silicon thin films deposited on glass substrates textured by embossing
A glass substrate texture of pyramids formed by embossing, suitable for polycrystalline silicon solar cells 5-20 /spl mu/m thick, is described. A monocrystalline silicon wafer textured with inverted pyramids was used as a die. We evaluate antireflection and light trapping properties for an undoped a-Si:H silicon film (volumetric thickness 5.6 /spl mu/m; no reflector) simultaneously deposited on this texture and sandblasted glass, using total reflectance and transmittance measurements. J/sub sc/ enhancement potential from light trapping in equally thick polycrystalline silicon films on the same substrates is estimated to be 6.7 (sandblasted), 8.7 (embossed) mA/cm/sup 2/. Light trapping characteristics obtained by spectral photoconductance measurements of the specimens are compared.