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Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)最新文献

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Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation 3-MeV质子辐照下掺硼硅片的类型转换
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915825
M. Chun, Dong-Ho Kim, J. Choo, J. Huh
{"title":"Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation","authors":"M. Chun, Dong-Ho Kim, J. Choo, J. Huh","doi":"10.1109/PVSC.2000.915825","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915825","url":null,"abstract":"Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1/spl times/10/sup 13/ cm/sup -2/ to 2/spl times/10/sup 15/ cm/sup -2/. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0/spl times/10/sup 13/ cm/sup -2/ and 3/spl times/10/sup 13/ cm/sup -2/ while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134319596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phosphine-added hydrogen plasma passivation of GaAs solar cell on Si substrate 硅衬底加膦氢等离子体钝化砷化镓太阳能电池
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916131
T. Ogawa, G. Wang, K. Murase, K. Hori, J. Arokiaraj, T. Soga, T. Jimbo, M. Umeno
{"title":"Phosphine-added hydrogen plasma passivation of GaAs solar cell on Si substrate","authors":"T. Ogawa, G. Wang, K. Murase, K. Hori, J. Arokiaraj, T. Soga, T. Jimbo, M. Umeno","doi":"10.1109/PVSC.2000.916131","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916131","url":null,"abstract":"The improvement of the GaAs solar cell on Si substrate (GaAs/Si solar cell) has been studied by treating phosphine-added hydrogen plasma (PH/sub 3//H/sub 2/ plasma) exposure. Phosphidization of GaAs surface and defect-passivation of entire GaAs bulk layer are realized simultaneously. As a result, surface recombination states are reduced, and the minority carrier lifetime is increased. Furthermore, the reduction of interface (GaAs/AlGaAs) recombination velocity is confirmed. For PH/sub 3//H/sub 2/ plasma exposed GaAs/Si solar cell, high open-circuit voltage and fill factor are obtained. Consequently, the conversion efficiency is increased from 15.9% to 18.6%.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134326877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The stretched lens ultralight concentrator array 拉伸透镜超轻聚光器阵列
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916087
M. O'neill, A. Mcdanal, M. Piszczor, M. Eskenazi, P.A. Jones, C. Carrington, D. Edwards, H. Brandhorst
{"title":"The stretched lens ultralight concentrator array","authors":"M. O'neill, A. Mcdanal, M. Piszczor, M. Eskenazi, P.A. Jones, C. Carrington, D. Edwards, H. Brandhorst","doi":"10.1109/PVSC.2000.916087","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916087","url":null,"abstract":"This paper describes a new type of space photovoltaic array, including test results for the first fully functional prototype panel. The stretched lens array (SLA) is a high-efficiency, ultralight, stowable, folding-blanket concentrator array. A prototype SLA panel has been performance tested at NASA GRC, with results confirming 27.4% net efficiency (375 W/sq.m areal power) under AM0 sunlight at room temperature. Furthermore, the total prototype panel areal mass, including stretched membrane Fresnel lens concentrators, fully assembled triple-junction cell receivers, and graphite cloth composite radiators, was 0.99 kg/sq.m, resulting in a specific power of 378 W/kg at the fully functional panel level. This is the first space solar array panel of any kind to simultaneously achieve over 300 W/sq.m and over 300 W/kg. In addition, the new SLA has been integrated into a relatively mature flexible blanket platform (ABLE's Aurora(R) array), with near-term array-level performance of 300 W/sq.m and 170 W/kg.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115043726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Ramakrishna Mission initiative impact study-a rural electrification project in West Bengal, India 罗摩克里希纳传教团倡议影响研究——印度西孟加拉邦农村电气化项目
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916197
J. L. Stone, H. Ullal, A. Chaurey, P. Bhatia
{"title":"Ramakrishna Mission initiative impact study-a rural electrification project in West Bengal, India","authors":"J. L. Stone, H. Ullal, A. Chaurey, P. Bhatia","doi":"10.1109/PVSC.2000.916197","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916197","url":null,"abstract":"Three-hundred photovoltaic-powered solar home lighting (SHS) systems have been successfully operated in the Sundarbans region of West Bengal since 1997. This paper details the impact of these systems on the beneficiaries, including student study time, kerosene consumption and savings, effectiveness of supply and after-sales service, nature and frequency of problems in the systems, technical evaluation of the systems including detailed battery-charging patterns, satisfaction of users, and summary of payment collection. The Ramakrishna Mission has been an excellent choice as the nongovernmental organization (NGO) responsible for administering the project and training the teams responsible for installing and maintaining the systems. Other applications, such as battery-charging stations, common-area lighting, water pumping, and vaccine refrigeration, were also evaluated.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114240539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Simplified mass-production process for 16% efficiency multi-crystalline Si solar cells 简化了16%效率多晶硅太阳能电池的量产工艺
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915786
S. Arimoto, M. Nakatani, Y. Nishimoto, H. Morikawa, M. Hayashi, H. Namizaki, K. Namba
{"title":"Simplified mass-production process for 16% efficiency multi-crystalline Si solar cells","authors":"S. Arimoto, M. Nakatani, Y. Nishimoto, H. Morikawa, M. Hayashi, H. Namizaki, K. Namba","doi":"10.1109/PVSC.2000.915786","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915786","url":null,"abstract":"We have developed a simplified mass-production process for 16% efficiency multi-crystalline silicon solar cells. In this paper, newly developed fabrication process without increasing process steps and applying expensive equipment is described. The main improved points are as follows: (1) novel texturing method using Na2CO/sub 3/: reduced fabrication cost compared to conventional NaOH+IPA etching; (2) optimization of PECVD temperature for SiN ARC; and (3) improved silver paste for fire-through of PECVD-SiN AR film: reduction of penetration into diffused n-layer during firing and finer line electrodes with high aspect ratio. By combining such novel technologies, 16% efficiency for 15 cm/spl times/15 cm cells has been obtained for four different suppliers mc-Si wafers.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114756681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Progress on thin silicon-on-ceramic solar cells 薄硅陶瓷太阳能电池的研究进展
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915839
P. Sims, A. Ingram, E. DelleDonne, J. Yaskoff, D. H. Ford, R. Hall, J. Rand, A. Barnett
{"title":"Progress on thin silicon-on-ceramic solar cells","authors":"P. Sims, A. Ingram, E. DelleDonne, J. Yaskoff, D. H. Ford, R. Hall, J. Rand, A. Barnett","doi":"10.1109/PVSC.2000.915839","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915839","url":null,"abstract":"AstroPower is employing Silicon-Film/sup TM/ technology toward the development of an advanced thin-silicon-based, photovoltaic module product. This module combines the design and process features of advanced thin-silicon solar cells, is light trapped, and integrated in a low-cost monolithic interconnected array. This advanced product design includes the following features: silicon layer grown on a low-cost ceramic substrate; a nominally 50 micron thick silicon layer with minority carrier diffusion lengths exceeding 100 microns; light trapping due to back-surface reflection and random texturing; back surface passivation. These features, combined with manufacturing that uses relatively low-cost capital equipment, continuous processing and a low-cost substrate, will lead to high performance, low-cost photovoltaic panels.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"19 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113933696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The national photovoltaic program "100,000 Solar House (GER) in Mongolia" 国家光伏项目“蒙古国10万太阳能之家”
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916243
N. Enebish
{"title":"The national photovoltaic program \"100,000 Solar House (GER) in Mongolia\"","authors":"N. Enebish","doi":"10.1109/PVSC.2000.916243","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916243","url":null,"abstract":"This paper summaries Mongolian government activities concerning the implementation of the national program \"100,000 Solar Houses (Ger) in Mongolia\" to satisfy the basic energy needs of nomadic herding families of the dispersed and distant poorest rural communities.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117289566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Effects of 40 keV electron irradiation on dark I-V characteristics of single-junction a-Si:H solar cells 40kev电子辐照对单结a-Si:H太阳能电池暗I-V特性的影响
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916069
Qianghua Wang, K. Lord, J. R. Woodyard
{"title":"Effects of 40 keV electron irradiation on dark I-V characteristics of single-junction a-Si:H solar cells","authors":"Qianghua Wang, K. Lord, J. R. Woodyard","doi":"10.1109/PVSC.2000.916069","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916069","url":null,"abstract":"The effects of 40 keV electron irradiations and anneals on dark I-V characteristics of a single-junction a-Si:H solar cell have been investigated. A parametric fitting model was used to identify the current mechanisms by comparing the measured and calculated I-V. A single current injection term fits the dark I-V characteristics before irradiation. Two additional terms had to be introduced following 40 keV electron irradiations with fluences of about 1E17 cm/sup -2/: one is a shunt term and the other is a term of the form CV/sup m/. The current mechanism characterized by the CV/sup m/ term was removed by annealing for two hours at 140/spl deg/C. Subsequent irradiation restores the current mechanism and it is readily removed by another annealing cycle. Initial work is reported on the use of a device simulator to determine the effect of irradiation on the material properties.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115515731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Temperature dependence of amorphous silicon solar cell PV parameters 非晶硅太阳能电池PV参数的温度依赖性
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915967
D. Carlson, G. Lin, G. Ganguly
{"title":"Temperature dependence of amorphous silicon solar cell PV parameters","authors":"D. Carlson, G. Lin, G. Ganguly","doi":"10.1109/PVSC.2000.915967","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915967","url":null,"abstract":"The temperature behavior of amorphous silicon (a-Si) based solar cells was measured for cells made under different fabrication conditions and with different thermal and illumination histories. Amorphous silicon solar cells exhibit a complex temperature behavior that depends on processing history and cannot be characterized by a unique temperature coefficient as in the case of crystalline silicon solar cells. In general, a-Si solar cells exhibit relatively little temperature dependence once they are operating in an equilibrated state, but they will exhibit a relatively strong temperature dependence over short periods of time. Both the short-term temperature dependence and the stabilized output power depend on several factors such as the device configuration, the defect concentration in the i-layer, the thickness of the i-layer and the light soaking temperature.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"314 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123223848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 51
AC module based on stacked a-Si-alloy and c-Si solar cells: design, technology and performance evaluation 基于a- si合金和c-Si堆叠太阳能电池的交流模块:设计、技术和性能评估
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916181
L. Schirone, S. Salvatori
{"title":"AC module based on stacked a-Si-alloy and c-Si solar cells: design, technology and performance evaluation","authors":"L. Schirone, S. Salvatori","doi":"10.1109/PVSC.2000.916181","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916181","url":null,"abstract":"Multibandgap photovoltaic conversion is applied to PV modules: the proposed device consists of a semitransparent a-Si module and a c-Si module in a stacked configuration. Solar cells in every layer of the stack are series connected according to the commonly used integration techniques giving rise to two independent circuits, driving specific peak power trackers. A two-stage module inverter provides a single AC output line. The whole structure glass/TCO/p-i-n(a-Si alloy)/TCO/sealing polymer/n-p(c-Si)/Ag is simulated taking into account experimental optical and transport parameters of a-Si alloys in a wide range of compositions. It is shown that a proper design of the device should allow efficiency improvements larger than 20% with respect to c-Si solar cells used in the bottom layer. Cost-benefits analysis is also performed, pointing out that no cost increase is expected (in $/W) for the stacked modules, with respect to common c-Si modules.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122718021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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