40kev电子辐照对单结a-Si:H太阳能电池暗I-V特性的影响

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI:10.1109/PVSC.2000.916069

Qianghua Wang, K. Lord, J. R. Woodyard

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引用次数: 2

摘要

研究了40kev电子辐照和退火对单结a- si:H太阳能电池暗I-V特性的影响。通过比较测量值和计算值，采用参数拟合模型识别当前机制。单一电流注入项符合辐照前的暗I-V特性。在影响约为1E17 cm/sup -2/的40 keV电子照射后，必须引入两个附加项:一个是分流项，另一个是形式为CV/sup m/的项。在140/spl℃下退火2小时，消除了以CV/sup /项为特征的电流机制。随后的辐照恢复了当前的机制，并且很容易被另一个退火循环去除。初步工作报告了使用设备模拟器来确定辐照对材料性能的影响。

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Effects of 40 keV electron irradiation on dark I-V characteristics of single-junction a-Si:H solar cells

The effects of 40 keV electron irradiations and anneals on dark I-V characteristics of a single-junction a-Si:H solar cell have been investigated. A parametric fitting model was used to identify the current mechanisms by comparing the measured and calculated I-V. A single current injection term fits the dark I-V characteristics before irradiation. Two additional terms had to be introduced following 40 keV electron irradiations with fluences of about 1E17 cm/sup -2/: one is a shunt term and the other is a term of the form CV/sup m/. The current mechanism characterized by the CV/sup m/ term was removed by annealing for two hours at 140/spl deg/C. Subsequent irradiation restores the current mechanism and it is readily removed by another annealing cycle. Initial work is reported on the use of a device simulator to determine the effect of irradiation on the material properties.

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Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)

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