3-MeV质子辐照下掺硼硅片的类型转换

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI:10.1109/PVSC.2000.915825

M. Chun, Dong-Ho Kim, J. Choo, J. Huh

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引用次数: 0

摘要

在室温下对掺硼的p型硅晶片进行质子辐照，辐照剂量范围为1/spl倍/10/sup 13/ cm/sup -2/至2/spl倍/10/sup 15/ cm/sup -2/。当剂量达到1.0/spl倍/10/sup 13/ cm/sup -2/和3/spl倍/10/sup 13/ cm/sup -2/之间时，在Cz晶片中形成p-n-p结构。通过霍尔测量、电流-电压(I-V)测量、扩展电阻(SR)测量和截面电子束感应电流(EBIC)测量，证实了p-n和p-n-p结构的形成。

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Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation

Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1/spl times/10/sup 13/ cm/sup -2/ to 2/spl times/10/sup 15/ cm/sup -2/. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0/spl times/10/sup 13/ cm/sup -2/ and 3/spl times/10/sup 13/ cm/sup -2/ while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.

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Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)

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