硅衬底加膦氢等离子体钝化砷化镓太阳能电池

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI:10.1109/PVSC.2000.916131

T. Ogawa, G. Wang, K. Murase, K. Hori, J. Arokiaraj, T. Soga, T. Jimbo, M. Umeno

{"title":"硅衬底加膦氢等离子体钝化砷化镓太阳能电池","authors":"T. Ogawa, G. Wang, K. Murase, K. Hori, J. Arokiaraj, T. Soga, T. Jimbo, M. Umeno","doi":"10.1109/PVSC.2000.916131","DOIUrl":null,"url":null,"abstract":"The improvement of the GaAs solar cell on Si substrate (GaAs/Si solar cell) has been studied by treating phosphine-added hydrogen plasma (PH/sub 3//H/sub 2/ plasma) exposure. Phosphidization of GaAs surface and defect-passivation of entire GaAs bulk layer are realized simultaneously. As a result, surface recombination states are reduced, and the minority carrier lifetime is increased. Furthermore, the reduction of interface (GaAs/AlGaAs) recombination velocity is confirmed. For PH/sub 3//H/sub 2/ plasma exposed GaAs/Si solar cell, high open-circuit voltage and fill factor are obtained. Consequently, the conversion efficiency is increased from 15.9% to 18.6%.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Phosphine-added hydrogen plasma passivation of GaAs solar cell on Si substrate\",\"authors\":\"T. Ogawa, G. Wang, K. Murase, K. Hori, J. Arokiaraj, T. Soga, T. Jimbo, M. Umeno\",\"doi\":\"10.1109/PVSC.2000.916131\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The improvement of the GaAs solar cell on Si substrate (GaAs/Si solar cell) has been studied by treating phosphine-added hydrogen plasma (PH/sub 3//H/sub 2/ plasma) exposure. Phosphidization of GaAs surface and defect-passivation of entire GaAs bulk layer are realized simultaneously. As a result, surface recombination states are reduced, and the minority carrier lifetime is increased. Furthermore, the reduction of interface (GaAs/AlGaAs) recombination velocity is confirmed. For PH/sub 3//H/sub 2/ plasma exposed GaAs/Si solar cell, high open-circuit voltage and fill factor are obtained. Consequently, the conversion efficiency is increased from 15.9% to 18.6%.\",\"PeriodicalId\":139803,\"journal\":{\"name\":\"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2000.916131\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2000.916131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

通过处理添加膦的氢等离子体(PH/sub - 3//H/sub - 2/等离子体)暴露，研究了硅衬底GaAs太阳电池(GaAs/Si太阳电池)的改进。同时实现了砷化镓表面的磷化和整个体层的缺陷钝化。结果，表面复合态减少，少数载流子寿命增加。进一步证实了界面(GaAs/AlGaAs)复合速度的降低。对于PH/sub 3/ H/sub 2/等离子体暴露的GaAs/Si太阳能电池，可以获得较高的开路电压和填充系数。因此，转换效率从15.9%提高到18.6%。

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Phosphine-added hydrogen plasma passivation of GaAs solar cell on Si substrate

The improvement of the GaAs solar cell on Si substrate (GaAs/Si solar cell) has been studied by treating phosphine-added hydrogen plasma (PH/sub 3//H/sub 2/ plasma) exposure. Phosphidization of GaAs surface and defect-passivation of entire GaAs bulk layer are realized simultaneously. As a result, surface recombination states are reduced, and the minority carrier lifetime is increased. Furthermore, the reduction of interface (GaAs/AlGaAs) recombination velocity is confirmed. For PH/sub 3//H/sub 2/ plasma exposed GaAs/Si solar cell, high open-circuit voltage and fill factor are obtained. Consequently, the conversion efficiency is increased from 15.9% to 18.6%.

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Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)

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