发布求助
文献互助 智能选刊 最新文献

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)最新文献

筛选
英文 中文
Diagnostic analysis of silicon photovoltaic modules after 20-year field exposure 硅光伏组件20年野外暴露后的诊断分析
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-25 DOI: 10.1109/PVSC.2000.916159
M. Quintana, D. King, F. Hosking, J. Kratochvil, R.W. Johnson, B. Hansen, N. Dhere, M. Pandit
{"title":"Diagnostic analysis of silicon photovoltaic modules after 20-year field exposure","authors":"M. Quintana, D. King, F. Hosking, J. Kratochvil, R.W. Johnson, B. Hansen, N. Dhere, M. Pandit","doi":"10.1109/PVSC.2000.916159","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916159","url":null,"abstract":"The objective of this study was to investigate the technology used by Spectrolab Inc. to manufacture photovoltaic modules that have provided twenty years of reliable service at Natural Bridges National Monument in southeastern Utah. A field survey, system performance tests, and a series of module and materials tests have confirmed the durability of the modules in the array. The combination of manufacturing processes, materials, and quality controls used by Spectrolab resulted in modules that have maintained a performance level close to the original specifications for twenty years. Specific contributors to the durability of the modules included polyvinyl-butyral (PVB) encapsulant, expanded metal interconnects, silicon oxide anti-reflective coating, and excellent solder/substrate solderability.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132768520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
Plasma-texturization for multicrystalline silicon solar cells 多晶硅太阳能电池的等离子体织构
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-25 DOI: 10.1109/PVSC.2000.915756
D. Ruby, S. H. Zaidi, S. Narayanan
{"title":"Plasma-texturization for multicrystalline silicon solar cells","authors":"D. Ruby, S. H. Zaidi, S. Narayanan","doi":"10.1109/PVSC.2000.915756","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915756","url":null,"abstract":"Multicrystalline Si (mc-Si) cells have not benefited from the cost-effective wet-chemical texturing processes that reduce front surface reflectance on single-crystal wafers. The authors developed a maskless plasma texturing technique for mc-Si cells using reactive ion etching (RIE) that results in much higher cell performance than that of standard untextured cells. Elimination of plasma damage has been achieved while reducing front reflectance to extremely low levels. Internal quantum efficiencies higher than those on planar and wet-textured cells have been obtained, boosting cell currents and efficiencies by up to 11% on monocrystalline Si and 2.5% on multicrystalline Si cells.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116962934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
PV hybrid VRLA battery test results from a telecommunications site 光伏混合VRLA电池测试结果来自电信站点
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-25 DOI: 10.1109/PVSC.2000.916151
T. Hund, J. Stevens
{"title":"PV hybrid VRLA battery test results from a telecommunications site","authors":"T. Hund, J. Stevens","doi":"10.1109/PVSC.2000.916151","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916151","url":null,"abstract":"A new valve regulated lead-acid (VRLA) gel motive power battery and PV system power center have been tested in the laboratory and at a PV hybrid telecommunication site. The power center provides battery charge control, system remote communications, and data acquisition at the field test site. Extensive laboratory and field-test data were used to improve battery performance by optimizing regulation voltages, finish-charge, and system design. After 1.5-years of service, battery and charge controller performance have met all performance requirements for the remote communications site at Sandia National Laboratories.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127862306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Prospects for high efficiency silicon solar cells in thin Czochralski wafers using industrial processes 用工业方法制备高效硅太阳能电池的前景
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-23 DOI: 10.1109/PVSC.2000.915784
T. Bruton, S. Roberts, K. Heasman, R. Russell, W. Warta, S. Glunz, J. Dicker, J. Knobloch
{"title":"Prospects for high efficiency silicon solar cells in thin Czochralski wafers using industrial processes","authors":"T. Bruton, S. Roberts, K. Heasman, R. Russell, W. Warta, S. Glunz, J. Dicker, J. Knobloch","doi":"10.1109/PVSC.2000.915784","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915784","url":null,"abstract":"Lower PV systems cost can be achieved if less silicon material is used in modules and if higher solar cell efficiencies can be achieved cost effectively. In this study the efficiency limits of mass production high efficiency laser grooved buried grid solar cells have been modelled for thinner and thinner wafers. PC1D modelling has been coupled with a 3D ray tracing simulation RAYN to predict cells performance. Given suitable surface passivation, light trapping and minority carrier lifetime, solar cell efficiency can actually increase with decreasing wafer thickness. Cells were made by the RP-PERC process, using thinned industrial grade Czochralski silicon wafers. Cells (4cm/sup 2/) of over 20% efficiency were fabricated in wafers with a final thickness of 115 /spl mu/m. Standard production LGBG cells had poor BSFs but on process optimisation nearly 17% efficiency were made in 140 /spl mu/m micron wafers on an industrial production line.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128844005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Investigation of factors influencing the accuracy of pyrheliometer calibrations 影响日冕仪标定精度的因素研究
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-21 DOI: 10.1109/PVSC.2000.916153
P. Thacher, W. Boyson, D. King
{"title":"Investigation of factors influencing the accuracy of pyrheliometer calibrations","authors":"P. Thacher, W. Boyson, D. King","doi":"10.1109/PVSC.2000.916153","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916153","url":null,"abstract":"The accuracy of solar cells calibrated as primary reference cells is directly dependent on the accuracy of the pyrheliometer used to measure the direct beam solar irradiance on the cell. Pyrheliometers are also used in measuring performance of concentrating photovoltaic modules. In order to reduce errors in photovoltaic performance measurements, we have investigated the calibration uncertainties for pyrheliometers from two manufacturers. Our calibration comparisons are relative to an absolute cavity radiometer traceable to the World Radiometric Reference. This paper quantifies the effects of aging, temperature, time-rate-of-change of temperature, wind, solar spectral shifts, linearity, window transmission, and solar tracking on pyrheliometer calibrations. Uncertainty remaining after accounting for these factors is 0.8% at the 2-sigma level.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131916254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Non-ideal recombination and transport mechanisms in multiple band gap solar cells 多带隙太阳能电池的非理想复合和输运机制
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916105
S. Bremner, C. Honsberg, R. Corkish
{"title":"Non-ideal recombination and transport mechanisms in multiple band gap solar cells","authors":"S. Bremner, C. Honsberg, R. Corkish","doi":"10.1109/PVSC.2000.916105","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916105","url":null,"abstract":"The suggestion of the use of multiple band gap solar cells to achieve efficiencies in excess of the homojunction limit has meant that the method for calculating the limiting efficiency has come under scrutiny. In particular, the inclusion of nonradiative transitions and transport apart from drift and diffusion is necessary for a consistent treatment. A method for the inclusion of nonradiative recombination into a three energy level system in a detailed balance framework is presented. Results are presented for the inclusion of an electron-electron Auger process at the central energy level. The results suggest that if the electron escapes to the conduction band edge, the efficiency can be enhanced when away from the optimum band gap arrangement as compared to the cases of no Auger process.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116669107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Porous silicon texturing of polysilicon substrates 多晶硅衬底的多孔硅织构
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916037
C. Striemer, F. Shi, P. Fauchet, S. Duttagupta
{"title":"Porous silicon texturing of polysilicon substrates","authors":"C. Striemer, F. Shi, P. Fauchet, S. Duttagupta","doi":"10.1109/PVSC.2000.916037","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916037","url":null,"abstract":"We have achieved 10.1% efficiency in a bulk porous polysilicon (PPS) solar cell in which the total thickness of the active layer was /spl sim/5 /spl mu/m. However, the removal of material from the active region of a solar cell during the etching process will limit its ultimate electrical efficiency. We have therefore started to investigate thin film PPS coatings that can be formed on the surface of a solar cell without disturbing the underlying junction characteristics. A systematic set of experiments specifically aimed at maximizing light trapping while maintaining the electrical properties of our devices is being conducted to improve our previous results. Substrates used in this investigation have included string ribbon grown polysilicon solar cells and thin film low-pressure chemical vapor deposited (LPCVD) polysilicon. The enhancement of light coupling into LPCVD polysilicon by incorporating a PPS layer has potential application in the development of thin film silicon solar cells on low cost substrates.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127284177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Modeling the cross-over of the I-V characteristics of thin film CdTe solar cells 薄膜碲化镉太阳能电池I-V特性的交叉建模
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915896
M. Burgelman, P. Nollet, S. Degrave, J. Beier
{"title":"Modeling the cross-over of the I-V characteristics of thin film CdTe solar cells","authors":"M. Burgelman, P. Nollet, S. Degrave, J. Beier","doi":"10.1109/PVSC.2000.915896","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915896","url":null,"abstract":"The I-V curves of high efficiency CdTe thin film solar cells show a kink in the forward region (roll-over) this fact is well studied and ascribed to a contact barrier e.g. at the back contact of the CdTe layer. Also, light and dark I-V characteristics intersect (cross-over), due to an increase of the contact saturation current under illumination. We observed on many occasions that a fan of several I-V curves all intersect at one single point in the first quadrant (forward current and voltage), when some parameter is varied, like illumination intensity or minimal changes of processing conditions. We ascribe this to the contribution of electron minority current at the CdTe back contact Schottky barrier. We show how this can explain the one-point-intersection. The validity of the assumptions are discussed with theoretical considerations, numerical simulations and experiments.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124806209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A facility for space calibration and measurement of solar cells on the International Space Station 国际空间站上用于空间校准和测量太阳能电池的设施
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916142
G. Landis, P. Jenkins, J. A. Sexton, D. Scheiman, R. Christie, J. Charpie, S. Gerber, D.B. Johnson, S. Bailey
{"title":"A facility for space calibration and measurement of solar cells on the International Space Station","authors":"G. Landis, P. Jenkins, J. A. Sexton, D. Scheiman, R. Christie, J. Charpie, S. Gerber, D.B. Johnson, S. Bailey","doi":"10.1109/PVSC.2000.916142","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916142","url":null,"abstract":"The Photovoltaic Engineering Testbed (\"PET\") is a facility to be flown on the International Space Station to perform calibration, measurement, and qualification of solar cells in the space environment and then returning the cells to Earth for laboratory use. PET will allow rapid-turnaround testing of new photovoltaic technology under AM0 conditions.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126059715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PECVD SiN/sub x/ induced hydrogen passivation in string ribbon silicon [solar cells] 串带状硅的PECVD SiN/sub x/诱导氢钝化[太阳能电池]
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915760
V. Yelundur, A. Rohatgi, Ji-Weon Jeong, A. Gabor, J. Hanoka, R. Wallace
{"title":"PECVD SiN/sub x/ induced hydrogen passivation in string ribbon silicon [solar cells]","authors":"V. Yelundur, A. Rohatgi, Ji-Weon Jeong, A. Gabor, J. Hanoka, R. Wallace","doi":"10.1109/PVSC.2000.915760","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915760","url":null,"abstract":"To improve the bulk minority carrier lifetime in string ribbon silicon, SiN/sub x/ induced defect passivation during a post deposition anneal is investigated. The authors' results indicate that SiN/sub x/ induced hydrogen passivation is very effective when the SiN/sub x/ film is annealed in conjunction with a screen-printed Al layer on the back. In addition, it is found that controlled rapid cooling can be used to enhance the defect passivation process. A model is proposed which relates the high temperature passivation to the release of hydrogen from the SiN/sub x/ film, the injection of vacancies from backside Al alloying, and the retention of hydrogen at defect sites. High efficiency screen-printed string ribbon solar cells (>14.5%) are fabricated utilizing the simultaneous SiN/sub x//Al anneal in a belt furnace for hydrogenation and Al-BSF formation, followed by RTP firing of screen-printed contacts to improve the retention of hydrogen at defects.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123450549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信