用工业方法制备高效硅太阳能电池的前景

T. Bruton, S. Roberts, K. Heasman, R. Russell, W. Warta, S. Glunz, J. Dicker, J. Knobloch
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引用次数: 5

摘要

如果在组件中使用较少的硅材料,并且如果可以实现更高的太阳能电池效率,则可以实现更低的光伏系统成本。在本研究中,针对越来越薄的晶圆,模拟了大规模生产高效率激光槽埋栅太阳能电池的效率极限。PC1D建模与3D光线追踪模拟RAYN相结合,以预测细胞性能。在适当的表面钝化、光捕获和少数载流子寿命条件下,太阳能电池效率实际上可以随着晶圆厚度的减小而增加。电池由RP-PERC工艺制成,使用薄的工业级克佐拉尔斯基硅片。在最终厚度为115 /spl mu/m的硅片上制造效率超过20%的电池(4cm/sup 2/)。标准生产的LGBG电池的bsf很差,但经过工艺优化,在一条工业生产线上,140 /spl μ m微米晶圆的效率接近17%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Prospects for high efficiency silicon solar cells in thin Czochralski wafers using industrial processes
Lower PV systems cost can be achieved if less silicon material is used in modules and if higher solar cell efficiencies can be achieved cost effectively. In this study the efficiency limits of mass production high efficiency laser grooved buried grid solar cells have been modelled for thinner and thinner wafers. PC1D modelling has been coupled with a 3D ray tracing simulation RAYN to predict cells performance. Given suitable surface passivation, light trapping and minority carrier lifetime, solar cell efficiency can actually increase with decreasing wafer thickness. Cells were made by the RP-PERC process, using thinned industrial grade Czochralski silicon wafers. Cells (4cm/sup 2/) of over 20% efficiency were fabricated in wafers with a final thickness of 115 /spl mu/m. Standard production LGBG cells had poor BSFs but on process optimisation nearly 17% efficiency were made in 140 /spl mu/m micron wafers on an industrial production line.
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