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Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)最新文献

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CIGSS solar cells based on CVD ZnO buffer layers 基于CVD ZnO缓冲层的CIGSS太阳能电池
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915869
L. Olsen, F. Addis, Liang Huang, W.N. Shafaman, P. Eschbach, G. Exarhos
{"title":"CIGSS solar cells based on CVD ZnO buffer layers","authors":"L. Olsen, F. Addis, Liang Huang, W.N. Shafaman, P. Eschbach, G. Exarhos","doi":"10.1109/PVSC.2000.915869","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915869","url":null,"abstract":"This paper describes investigations of cells based on Siemens Solar material, CIGSS, and highly resistive ZnO (i-ZnO) buffer layers grown by MOCVD. Resistive i-ZnO buffer layers are grown on CIGSS at 100/spl deg/C, after heating the substrate to 250/spl deg/C and using nitrogen as a carrier gas. The use of a KCN etch on the CIGSS surface prior to growth of i-ZnO buffer layers was determined to be beneficial to cell performance. XPS studies show that the etching step removes oxygen from the substrate surface that had complexed with Se to form SeO/sub 2/. Cells that do not receive a KCN etch typically have shunted I-V curves leading to relatively low open circuit voltages, fill factors and efficiencies. A tentative model is proposed for the effect of KCN. Finally, one cell (using a KCN etch) exhibited a total area efficiency of 12.7 % with an open circuit voltage of 0.577 Volts.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115876881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Record cell efficiency on industrial multicrystalline silicon by rapid thermal processing 通过快速热加工，记录工业多晶硅电池效率
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915832
S. Noel, L. Debarge, R. Monna, H. Lautenschlager, R. Schindler, J. Muller
{"title":"Record cell efficiency on industrial multicrystalline silicon by rapid thermal processing","authors":"S. Noel, L. Debarge, R. Monna, H. Lautenschlager, R. Schindler, J. Muller","doi":"10.1109/PVSC.2000.915832","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915832","url":null,"abstract":"Simultaneous diffusion of phosphorus and aluminum by rapid thermal processing (RTP) in the order of one minute is used to realize emitter and back surface field in a single high temperature step, with controlled surface concentration of the dopant in order to obtain suitable front surface recombination velocities. Carefully controlling the mentioned parameter on industrial multicrystalline silicon (Polix(R) from Photowatt) lead to 16.7% efficient solar cells on a surface of 25 cm/sup 2/. All results are discussed in terms of photoconductivity decay and quantum efficiency analysis.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115865392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Stoichiometry control of CdTe thin film solar cells by close-spaced sublimation CdTe薄膜太阳能电池的近距离升华化学计量学控制
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915906
T. Okamoto, S. Kitamoto, A. Yamada, M. Konagai
{"title":"Stoichiometry control of CdTe thin film solar cells by close-spaced sublimation","authors":"T. Okamoto, S. Kitamoto, A. Yamada, M. Konagai","doi":"10.1109/PVSC.2000.915906","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915906","url":null,"abstract":"The control of the native defects in the CdTe thin film solar cells was investigated by using a novel source for a close-spaced sublimation (CSS) process which was prepared by vacuum evaporation with elemental Cd and Te (evaporated source). The evaporated sources were prepared on glass substrates at room temperature, and Cd/Te ratio was controlled by varying the Cd and Te beam equivalent pressures. In the cells using the Te-rich source, the conversion efficiency was less than 0.2 % because of the extremely low shunt resistance. On the other hand, the conversion efficiency above 15 % was obtained by using the Cd-rich source. C-V characteristics revealed that the acceptor concentration in the CdTe layer increased with increasing the Cd/Te ratio of the evaporated source. Furthermore, photoluminescence spectra implied that the formation of the Cd vacancies in the CdTe layer was suppressed by using the Cd-rich source.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134116676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Degradation of surface quality due to anti-reflective coating deposition on silicon solar cells 硅太阳能电池表面抗反射涂层沉积导致的表面质量下降
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915818
M. Cudzinovic, T. Pass, A. Terao, P. Verlinden, R. M. Swanson
{"title":"Degradation of surface quality due to anti-reflective coating deposition on silicon solar cells","authors":"M. Cudzinovic, T. Pass, A. Terao, P. Verlinden, R. M. Swanson","doi":"10.1109/PVSC.2000.915818","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915818","url":null,"abstract":"We find that the front surface quality on back contacted silicon solar cells is degraded by the evaporative deposition of an anti-reflective coating. The degradation is most severe when an e-beam evaporation is performed, but there is still significant degradation with thermal evaporation. The surface recovers some after a forming gas anneal but is still degraded compared to before the evaporation. The degradation overwhelms and negates any forming gas anneal performed prior to the evaporation. The degradation is greatly reduced if the surface is not textured. We discuss the application of these results to our high efficiency silicon solar cells.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134131565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Investigation of carbon arc source as an AM0 solar simulator for use in characterizing multijunction solar cells 碳弧源作为AM0太阳模拟器用于多结太阳能电池表征的研究
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916135
Jianzeng Xu, J. R. Woodyard
{"title":"Investigation of carbon arc source as an AM0 solar simulator for use in characterizing multijunction solar cells","authors":"Jianzeng Xu, J. R. Woodyard","doi":"10.1109/PVSC.2000.916135","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916135","url":null,"abstract":"Optimization of multi-junction solar cell designs requires a solar simulator with a spectral irradiance that closely matches AM0. This is particularly true for multijunction solar cells designed to be used in radiation environments as well as cells that experience photo-degradation under AM0. The carbon arc source is being investigated to determine its suitability as an AM0 solar simulator for the characterization of multijunction solar cells. The spectral irradiance of readily available solid and cored carbon rods has been investigated. The spectral irradiance produced by the carbon rods used in these investigations is due to two mechanisms. One is spectral emission from atoms and molecules in the arc that originate from the gaseous atmosphere and the carbon rods. The other mechanism is thermal radiation from the high temperature carbon rods. The spectral irradiances for these two mechanisms are quantified and compared with the WRL AM0 spectrum.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134430173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Universidad Verde-200 kWp grid connected PV system verversidad - 200kwp并网光伏系统
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916222
J. Aguilera, G. Almonacid, P. Pérez, P. G. Vidal
{"title":"Universidad Verde-200 kWp grid connected PV system","authors":"J. Aguilera, G. Almonacid, P. Pérez, P. G. Vidal","doi":"10.1109/PVSC.2000.916222","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916222","url":null,"abstract":"This project consists in the installation of four photovoltaic subgenerators connected to the low voltage grid at Jaen University Campus (Spain), with a total power of 200 kWp. The Univer Project is developed under the Thermie Programme of the EU, with a budget of about 1.8 M euros. The main objective is the integration of a medium scale PV plant using different architectural solutions. This project presents two innovative aspects: on the one hand, the development of the technology necessary to implement medium-high scale PV plants in crowded places, mainly focused on safety and protection systems; on the other, the development and analysis of different architectural solutions to integrate PV generators using constructive structures easily replicable.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"633 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131651974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The density of states in heavily doped regions of silicon solar cells 硅太阳能电池中重掺杂区域的态密度
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915764
D. Neuhaus, P. Altermatt, R. Starrett, A. Schenk, A. Aberle
{"title":"The density of states in heavily doped regions of silicon solar cells","authors":"D. Neuhaus, P. Altermatt, R. Starrett, A. Schenk, A. Aberle","doi":"10.1109/PVSC.2000.915764","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915764","url":null,"abstract":"The density of states (DOS) of crystalline silicon changes with the introduction of dopants due to the formation of an impurity band and band tails. Until now, the DOS of intrinsic silicon has been used to model Si devices, regardless of the doping level. This approximation may not be satisfactory for the emitter and back surface field regions of Si solar cells. Therefore, the authors measured the DOS by performing 4.2 K tunnel spectroscopy measurements on Schottky diodes fabricated on heavily doped silicon. They extracted the DOS from this data by calculating the quantum-mechanical tunnel probability through the Schottky barrier, using a standard theory based on the WKB approximation and the two-band model. They find that this theory adequately describes the change of the DOS within the conduction band. However, below the conduction band edge, they show that the determination of the DOS requires the inclusion of phononic effects.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131071063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Approaching high efficiencies over 13% with 2-/spl mu/m thick CdS/CdTe thin film solar cells 2-/spl μ m厚的CdS/CdTe薄膜太阳能电池接近13%以上的高效率
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.915966
K. Nakamura, M. Gotoh, T. Fujihara, T. Toyama, H. Okamoto
{"title":"Approaching high efficiencies over 13% with 2-/spl mu/m thick CdS/CdTe thin film solar cells","authors":"K. Nakamura, M. Gotoh, T. Fujihara, T. Toyama, H. Okamoto","doi":"10.1109/PVSC.2000.915966","DOIUrl":"https://doi.org/10.1109/PVSC.2000.915966","url":null,"abstract":"Highly efficient CdS/CdTe thin film solar cells with thinner PV active layers are required from a view point of reduction of production cost as well as toxicity of Cd. We have achieved the conversion efficiency of 13.5% (V/sub oc/: 0.799 V, J/sub sc/: 24.8 mA/cm/sup 2/, F.F.: 0.679, area: 0.42 cm/sup 2/) using 2.0-/spl mu/m thick PV active layers. High efficiencies were obtained with annealing temperatures at CdCl/sub 2/ treatment lower than those for conventional thick (5-10 /spl mu/m) solar cells. Furthermore, higher oxygen concentration of 7% at the CdCl/sub 2/ treatment was found to be effective for improvement of the efficiencies.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132782162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Strain-balanced materials for high-efficiency solar cells 用于高效太阳能电池的应变平衡材料
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916122
N. Ekins‐Daukes, J. Zhang, D. B. Bushnell, K. Barnham, M. Mazzer, J. S. Roberts
{"title":"Strain-balanced materials for high-efficiency solar cells","authors":"N. Ekins‐Daukes, J. Zhang, D. B. Bushnell, K. Barnham, M. Mazzer, J. S. Roberts","doi":"10.1109/PVSC.2000.916122","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916122","url":null,"abstract":"Traditionally, monolithic multi-junction solar cells have required lattice matched material combinations for efficient operation. However, strain-balanced structures allow lattice mismatched materials to be grown pseudomorphically, with low defect densities, and therefore offer interesting band-gap configurations for attaining optimal multi-junction solar cell structures. Several material combinations are identified and their suitability as highly efficient photovoltaic materials discussed; in particular In/sub x/Ga/sub 1-x/As, GaAs/sub 1-x/P/sub x/, GaInP and GaInNAs. Estimates for the limiting efficiency of strain-balanced multi-junction cells are presented, together with an outline of the technological requirements to achieve such cells.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133247494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Performance of light-weighted PV arrays installed on building walls in a snowy country in Japan 在日本一个多雪的国家安装在建筑物墙壁上的轻型光伏阵列的性能
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036) Pub Date : 2000-09-15 DOI: 10.1109/PVSC.2000.916203
K. Yoshioka, T. Takayama, T. Saitoh, S. Yatabe, N. Ishikawa
{"title":"Performance of light-weighted PV arrays installed on building walls in a snowy country in Japan","authors":"K. Yoshioka, T. Takayama, T. Saitoh, S. Yatabe, N. Ishikawa","doi":"10.1109/PVSC.2000.916203","DOIUrl":"https://doi.org/10.1109/PVSC.2000.916203","url":null,"abstract":"The performance of two kinds of PV array installed on a conventional roof and building walls in a snowy country has been evaluated by meteorological data and hourly generated energy. This paper focuses on energy generation on a north wall in the snowy winter season. Simulation was also carried out using a PV energy simulation program, PVFORM and meteorological PV data, METPV. As a result, there is almost no difference between generated energies with and without snow for the PV arrays installed on the conventional roof, while generated energies with snow is three times higher than that without snow for the PV arrays installed on the north wall.","PeriodicalId":139803,"journal":{"name":"Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128886381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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