Integrated Ferroelectrics最新文献_第10页

Photocatalytic Characteristics of Cobalt Doped ZnO and Cobalt/Manganese Co-Doped ZnO Nanocrystalline Materials Synthesized by Soft Chemical Route: Effective Elimination of Orange G Dye under UV Light 软化学法合成钴掺杂ZnO和钴/锰共掺杂ZnO纳米晶材料的光催化特性:紫外光下对橙色G染料的有效去除

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2239095

Elizabeth Kuruvilla, Arputharaj Samson Nesaraj, Vinaya Jose, Vismaya Jose, Manasai Arunkumar

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Rare Earth Metal Samarium Doped Ferrite and Its Structural, Morphological, Magnetic, and Optical Studies for Biomedical Applications 稀土金属钐掺杂铁氧体及其生物医学应用的结构、形态、磁性和光学研究

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227042

Avinash Tripathi, Abhishek Nigam, S. J. Pawar

{"title":"Rare Earth Metal Samarium Doped Ferrite and Its Structural, Morphological, Magnetic, and Optical Studies for Biomedical Applications","authors":"Avinash Tripathi, Abhishek Nigam, S. J. Pawar","doi":"10.1080/10584587.2023.2227042","DOIUrl":"https://doi.org/10.1080/10584587.2023.2227042","url":null,"abstract":"AbstractThe x-ray diffraction analysis manifested the single phases of Fe2O3, SmFeO3, and v SmFeO3 synthesized via sol-gel route. The Fe2O3, SmFeO3, and v SmFeO3 were hexagonal, orthorhombic, and cubic, respectively. The Debye-Scherer formula was used to calculate the average crystallite size of Fe2O3 (85.54 nm), SmFeO3 (67.65 nm), and v SmFeO3 (49.58 nm). The FESEM reveals near-spherical morphology with average particle sizes of 173, 114, and 161 nm, respectively. VSM analysis revealed the enhanced magnetic behavior of SmFeO3 and v SmFeO3 compared to Fe2O3. Antimicrobial activity against both E. coli and S. aureus bacteria justifies the biomedical application.Keywords: Antimicrobialferritesmagnetic nanoparticlessamariumrare earth material Disclosure StatementNo potential conflict of interest was reported by the author(s).AcknowledgmentsThe authors are grateful to the Centre for Interdisciplinary Research (CIR), MNNIT Allahabad, Prayagraj, and IIT Kanpur, for the characterization of the materials.Additional informationFundingThis work was supported by the Ministry of Education, Govt. of India, by giving an M. Tech. Fellowship.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Pyro-Catalytic Activates of Cement-Based BaTiO ₃ Composites 水泥基batio3复合材料的热催化活性研究

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227055

Norah Alwadai, V. P. Singh, Maryam Al Huwayz, Z.A. Alrowaili, Imen Kebaili, Imed Boukhris, M. S. Al-Buriahi

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Dielectric Properties of a Nanocomposite from RbNO₃ Incorporated into Pores of Al₂O₃ Matrix Al2O3基质孔隙中RbNO3纳米复合材料介电性能研究

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227052

Hoai Thuong Nguyen, Sergey V. Baryshnikov, A. Yu. Milinsky, Elena V. Stukova

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Scanning Electron Microscopy Study of Ca _0.5 Nd _0.5 MnO ₃ and Ca _0.5 Pr _0.5 MnO ₃ Crystals ca0.5 Nd 0.5 mno3和ca0.5 Pr 0.5 mno3晶体的扫描电镜研究

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227041

Z. E. Hakhverdiyeva

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TEM Investigation of Stacking Faults Defect Taken Along [100] Zone Axis of Cubic AlN on MgO (001) Substrate with Using 2-Step Growth Cubic GaN Buffer Layer by PAMBE PAMBE用TEM研究MgO(001)衬底上立方氮化镓沿[100]带轴的堆积缺陷

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227049

N. Discharoen, S. Sanorpim, N. Nuntawong, V. Yordsri, K. Onabe

{"title":"TEM Investigation of Stacking Faults Defect Taken Along [100] Zone Axis of Cubic AlN on MgO (001) Substrate with Using 2-Step Growth Cubic GaN Buffer Layer by PAMBE","authors":"N. Discharoen, S. Sanorpim, N. Nuntawong, V. Yordsri, K. Onabe","doi":"10.1080/10584587.2023.2227049","DOIUrl":"https://doi.org/10.1080/10584587.2023.2227049","url":null,"abstract":"AbstractMicrostructures of cubic AlN on MgO (001) with using two-step growth of cubic GaN buffer layer grown by plasma assist molecular beam epitaxy (PAMBE) technique have been investigated by bright- and dark field cross section transmission electron microscopy (TEM) along [100] zone axis. The Pyramid shape contrast which has been proposed the characteristic of stacking faults defect was observed in cubic AlN film. Pyramid facet contrast correspond with (002) plane and (111) plane with ∼45° projection along [100] direction. The 3D graphic model can explain the Pyramid contrast structure defect as the same Pyramid contrast structure observed in [110] direction with the angle between (002) and (111) of cubic structure found ∼54.7° by the literature.Keywords: Cubic phaseAlNbuffer layerMBEstacking faultTEM AcknowledgementsThe authors would like to thank the 90th Anniversary of Chulalongkorn University Fund (Ratchadaphiseksomphot Endowment Fund), Conference Grant for Ph.D. Student Chulalongkorn University and Ratchadaphiseksomphot Endowment Fund of Chulalongkorn University (RES5605302227AM) for their financial support.Disclosure StatementNo potential conflict of interest was reported by the authors.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Output Behavior of Fall Detection Sensor Using Brush-Based Triboelectric Nanogenerator Depending on Fiber Characteristics 基于刷基摩擦纳米发电机的跌落检测传感器输出特性与纤维特性的关系

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227043

Tomohiro Komatsu, Rino Uejima, Shota Shima, Yuji Uchiyama, Eiichi Kobayashi, Eiichiro Takamura, Hiroaki Sakamoto

{"title":"Output Behavior of Fall Detection Sensor Using Brush-Based Triboelectric Nanogenerator Depending on Fiber Characteristics","authors":"Tomohiro Komatsu, Rino Uejima, Shota Shima, Yuji Uchiyama, Eiichi Kobayashi, Eiichiro Takamura, Hiroaki Sakamoto","doi":"10.1080/10584587.2023.2227043","DOIUrl":"https://doi.org/10.1080/10584587.2023.2227043","url":null,"abstract":"Abstract In Japan, a huge portion of the population is aged people, who are prone to various diseases and injuries on a regular basis. Injuries due to falls are one of the biggest risk factors. Consequently, the demand for fall detection sensors, especially the ones that used a triboelectric nanogenerator (TENG) has recently increased. In a previous study, our group reported the development of a wearable sensor for fall detection with privacy protection using the principle of TENG. Conventional TENGs use polymer films as friction material. However, it is difficult for film-based TENGs to harvest output from various angles of contact separation, as the films have two-dimension structures. Consequently, our previous study focused on developing brush-based TENG (B-TENG), and B-TENG harvested output from various angles of contact-separation. However, the B-TENGs we developed were not sensitive enough to detect signals of lower contact force, and thereby could not be used in fall detection sensors. In this study, we focused on improving the performance of B-TENG by investigating the properties of the brushes and the effect of various external parameters on the harvested output voltage of B-TENGs. Consequently, we have constructed an optimized B-TENG, which harvests almost 18 times higher output voltage than the previous one developed by our group. Thus, this optimized B-TENG has the potential for practical use in fall detection sensors.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Towards Optimizing Surface Coverage for PVP-Assisted PZT Ferroelectric Thick Film pvp辅助PZT铁电厚膜表面覆盖度优化研究

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227057

Jayanta Parui, Mani R, Jain Jose, Shama Parwin, E. Varadarajan, V. Natarajan

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ATCA Multi-Node Management System Protocol Optimization ATCA多节点管理系统协议优化

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2192679

Min Wang, Zizheng Wang, Jun Cui

{"title":"ATCA Multi-Node Management System Protocol Optimization","authors":"Min Wang, Zizheng Wang, Jun Cui","doi":"10.1080/10584587.2023.2192679","DOIUrl":"https://doi.org/10.1080/10584587.2023.2192679","url":null,"abstract":"AbstractThe out-of-band management system defined by IPMI only supports IIC bus for inter-node communication, which has low communication rate and poor flexibility for multi-node layout, and it is not suitable for cluster management applications with large data volume of multiple nodes. This article adopts Ethernet instead of IIC to realize the structure layout of multi-node distributed cluster management system. The operation and maintenance information are trans-mitted by RMCP+, but the original RMCP + is rate limited and less stable in the transmission of large data volume in multi-cluster management system due to the use of AES-CBC encryption algorithm. This article optimizes the RMCP + communication process logic to reduce the redundancy in the system cascade data about transmission encryption and decryption calculation, and proposes the method of using parallel CTR for data block encryption instead of serial CBC data block encryption, which realizes the loose coupling of database decryption in data packets, in-creases the decryption rate of data cipher text at remote clients, educes the error transmission caused by tight coupling of data blocks, and improves the communication efficiency. The experimental environment of QEMU-based multi-node management system is built to verify that the communication method proposed in this article is suitable for the operation and maintenance management of distributed multi-node complex ATCA.Keywords: ATCA equipmentIPMIout-of-band management systemAES algorithm Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Structural and Electrical Transport Features of Bi ₄ Ti _2.9 Zr _0.1 O ₁₂ bi4 Ti 2.9 Zr 0.1 o12的结构和电输运特性

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2239094

Krishna Auromun, Premananda Pradhan, Ram Naresh Prasad Choudhary

{"title":"Structural and Electrical Transport Features of Bi 4 Ti 2.9 Zr 0.1 O 12","authors":"Krishna Auromun, Premananda Pradhan, Ram Naresh Prasad Choudhary","doi":"10.1080/10584587.2023.2239094","DOIUrl":"https://doi.org/10.1080/10584587.2023.2239094","url":null,"abstract":"AbstractThis paper reports the structural, dielectric, and electrical properties of Zr (10%) substituted bismuth titanate with the chemical formula Bi4Ti2.9Zr0.1O12. The material possesses a distorted orthorhombic structure and space group of B2cb at room temperature. The Zr-substituted bismuth titanate has a high Curie temperature and good dielectric constant. In any case, the dielectric constant of the Zr doped ceramic is higher than that of pure bismuth titanate. The study of impedance properties revealed the relaxation process, negative temperature coefficient of resistance behavior, grain and grain boundary formation, and the space charge effect in the high-frequency region of the material. The AC conductivity study explained the activation of charge carriers and the associated hopping mechanisms. A smaller activation energy (Ea) is observed at the low temperatures than in the high-temperature range. The ferroelectric property is confirmed through the P ∼ E hysteresis loop of the material at room temperature.Keywords: DielectricferroelectricelectricalAC conductivityactivation energy Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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