Integrated Ferroelectrics最新文献_第10页

Modification of Structural and Dielectric Properties of SmFeO ₃ Orthoferrites System by Ce Doping Ce掺杂改性smfeo3正铁氧体体系的结构和介电性能

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2239098

Uma Gaikwad, Smita Acharya, Shraddha Shirbhate, Chitra Khade

{"title":"Modification of Structural and Dielectric Properties of SmFeO <sub>3</sub> Orthoferrites System by Ce Doping","authors":"Uma Gaikwad, Smita Acharya, Shraddha Shirbhate, Chitra Khade","doi":"10.1080/10584587.2023.2239098","DOIUrl":"https://doi.org/10.1080/10584587.2023.2239098","url":null,"abstract":"AbstractRare-earth orthoferrites RFeO3 are important functional materials and are very promising due to their unique electrical properties. Amongst various orthoferrites systems, SmFeO3 is emerging as potential system having various multifunctional behaviour with structural modifications by doping or microstructural effect. In the present attempt, we explore SmFeO3 system and modify it by partially replacing Sm by Ce. We have synthesised pure SmFeO3 based system through Sol-Gel one of the combustion method. X-ray diffraction study confirms the formation of pure and highly crystalline single phase without any impurity. To get more clarity about structural features, Rietveld Refinement has been carried out using by Full-Proof Software which confirms the formation of orthorhombic structure with Pbnm space group. Dielectric study confirms that Ce doping in SmFeO3 modify dielectric constant from one order to two order. The response of polarisation with respect to applied electric field has been studied by P-E loop tracer. The remanent polarisation (pr) enhanced from 0.040 to 0.050 µC/cm2 for x = 0.10 after applied maximum electric field. An improvement in the ferroelectric loop was obtained due to the suppression of oxygen vacancies and the reduced leakage current density (10 − 8 A/cm2 at 20 kV/cm).Keywords: Orthoferritessol gelperovskitedielectric properties AcknowledgmentAMRL laboratory, Dept. of Physics, RTMNU, Nagpur, India is acknowledged for providing the Ferroelectric (P-E loop) as well as Dielectric characterization facility.Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Impact of Ferroelectric Material BaTiO₃ on Negative Capacitance TFET Device and Its Circuit Application 铁电材料BaTiO3对负电容TFET器件的影响及其电路应用

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227054

Amandeep Singh, Sanjeet Kumar Sinha, Sweta Chander

{"title":"Impact of Ferroelectric Material BaTiO<sub>3</sub> on Negative Capacitance TFET Device and Its Circuit Application","authors":"Amandeep Singh, Sanjeet Kumar Sinha, Sweta Chander","doi":"10.1080/10584587.2023.2227054","DOIUrl":"https://doi.org/10.1080/10584587.2023.2227054","url":null,"abstract":"With the increase in scaling of transistors in nanometer regime, various short channel effects are emerging in transistor operation that are required to resolved while putting conventional transistor to any practical application. Various device modifications and structure improvizations have been made and reported by the researchers to overcome the short channel effects and replace the conventional MOSFET with an optimized device in practical circuit applications. The device structure proposed in this work incorporates the negative capacitance phenomenon for making subthreshold swing steeper and enhancing current ratio of TFET. Further the device dimensions are being optimized to get improvised characteristics and best results are obtained at 3 nm thick BaTiO3 Ferroelectric material for making negative capacitance gate stack. In this paper, negative capacitance TFET so formed is used for implementing inverter and 1 T DRAM cell. Results obtained shows that the inverter and DRAM cell operates at a very lower supply voltage and are more suitable for low power applications as compared to conventional circuits.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Rare Earth Metal Samarium Doped Ferrite and Its Structural, Morphological, Magnetic, and Optical Studies for Biomedical Applications 稀土金属钐掺杂铁氧体及其生物医学应用的结构、形态、磁性和光学研究

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227042

Avinash Tripathi, Abhishek Nigam, S. J. Pawar

{"title":"Rare Earth Metal Samarium Doped Ferrite and Its Structural, Morphological, Magnetic, and Optical Studies for Biomedical Applications","authors":"Avinash Tripathi, Abhishek Nigam, S. J. Pawar","doi":"10.1080/10584587.2023.2227042","DOIUrl":"https://doi.org/10.1080/10584587.2023.2227042","url":null,"abstract":"AbstractThe x-ray diffraction analysis manifested the single phases of Fe2O3, SmFeO3, and v SmFeO3 synthesized via sol-gel route. The Fe2O3, SmFeO3, and v SmFeO3 were hexagonal, orthorhombic, and cubic, respectively. The Debye-Scherer formula was used to calculate the average crystallite size of Fe2O3 (85.54 nm), SmFeO3 (67.65 nm), and v SmFeO3 (49.58 nm). The FESEM reveals near-spherical morphology with average particle sizes of 173, 114, and 161 nm, respectively. VSM analysis revealed the enhanced magnetic behavior of SmFeO3 and v SmFeO3 compared to Fe2O3. Antimicrobial activity against both E. coli and S. aureus bacteria justifies the biomedical application.Keywords: Antimicrobialferritesmagnetic nanoparticlessamariumrare earth material Disclosure StatementNo potential conflict of interest was reported by the author(s).AcknowledgmentsThe authors are grateful to the Centre for Interdisciplinary Research (CIR), MNNIT Allahabad, Prayagraj, and IIT Kanpur, for the characterization of the materials.Additional informationFundingThis work was supported by the Ministry of Education, Govt. of India, by giving an M. Tech. Fellowship.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Catalytic Conversion of Ni ₁₂ P ₅ in Situ on the Surface of Carbon Nanotubes to Promote Polysulfide Conversion in High-Performance Lithium-Sulfur Batteries 碳纳米管表面Ni 12p5原位催化转化促进高性能锂硫电池中多硫化物的转化

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2022.2143187

Shenghong Mao, Wenxiao Su, Chunyuan Liu, Fu Zhao, Hongxia Zhao, Xiaoping Zheng

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Extension of Surface Charge Density Studies of Metal Oxide Semiconductor (MOS) Structure to Polarization Studies of Metal Ferroelectric Metal (MFM) Structure in Bulk Form: Experimental and Simulation of Polarization Data 金属氧化物半导体(MOS)结构的表面电荷密度研究延伸到金属铁电金属(MFM)结构的本体极化研究:极化数据的实验与模拟

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2239096

Syed Mahboob, None Rizwana

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Photocatalytic Characteristics of Cobalt Doped ZnO and Cobalt/Manganese Co-Doped ZnO Nanocrystalline Materials Synthesized by Soft Chemical Route: Effective Elimination of Orange G Dye under UV Light 软化学法合成钴掺杂ZnO和钴/锰共掺杂ZnO纳米晶材料的光催化特性:紫外光下对橙色G染料的有效去除

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2239095

Elizabeth Kuruvilla, Arputharaj Samson Nesaraj, Vinaya Jose, Vismaya Jose, Manasai Arunkumar

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Pyro-Catalytic Activates of Cement-Based BaTiO ₃ Composites 水泥基batio3复合材料的热催化活性研究

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227055

Norah Alwadai, V. P. Singh, Maryam Al Huwayz, Z.A. Alrowaili, Imen Kebaili, Imed Boukhris, M. S. Al-Buriahi

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Dielectric Properties of a Nanocomposite from RbNO₃ Incorporated into Pores of Al₂O₃ Matrix Al2O3基质孔隙中RbNO3纳米复合材料介电性能研究

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227052

Hoai Thuong Nguyen, Sergey V. Baryshnikov, A. Yu. Milinsky, Elena V. Stukova

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Scanning Electron Microscopy Study of Ca _0.5 Nd _0.5 MnO ₃ and Ca _0.5 Pr _0.5 MnO ₃ Crystals ca0.5 Nd 0.5 mno3和ca0.5 Pr 0.5 mno3晶体的扫描电镜研究

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227041

Z. E. Hakhverdiyeva

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TEM Investigation of Stacking Faults Defect Taken Along [100] Zone Axis of Cubic AlN on MgO (001) Substrate with Using 2-Step Growth Cubic GaN Buffer Layer by PAMBE PAMBE用TEM研究MgO(001)衬底上立方氮化镓沿[100]带轴的堆积缺陷

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227049

N. Discharoen, S. Sanorpim, N. Nuntawong, V. Yordsri, K. Onabe

{"title":"TEM Investigation of Stacking Faults Defect Taken Along [100] Zone Axis of Cubic AlN on MgO (001) Substrate with Using 2-Step Growth Cubic GaN Buffer Layer by PAMBE","authors":"N. Discharoen, S. Sanorpim, N. Nuntawong, V. Yordsri, K. Onabe","doi":"10.1080/10584587.2023.2227049","DOIUrl":"https://doi.org/10.1080/10584587.2023.2227049","url":null,"abstract":"AbstractMicrostructures of cubic AlN on MgO (001) with using two-step growth of cubic GaN buffer layer grown by plasma assist molecular beam epitaxy (PAMBE) technique have been investigated by bright- and dark field cross section transmission electron microscopy (TEM) along [100] zone axis. The Pyramid shape contrast which has been proposed the characteristic of stacking faults defect was observed in cubic AlN film. Pyramid facet contrast correspond with (002) plane and (111) plane with ∼45° projection along [100] direction. The 3D graphic model can explain the Pyramid contrast structure defect as the same Pyramid contrast structure observed in [110] direction with the angle between (002) and (111) of cubic structure found ∼54.7° by the literature.Keywords: Cubic phaseAlNbuffer layerMBEstacking faultTEM AcknowledgementsThe authors would like to thank the 90th Anniversary of Chulalongkorn University Fund (Ratchadaphiseksomphot Endowment Fund), Conference Grant for Ph.D. Student Chulalongkorn University and Ratchadaphiseksomphot Endowment Fund of Chulalongkorn University (RES5605302227AM) for their financial support.Disclosure StatementNo potential conflict of interest was reported by the authors.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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