Integrated Ferroelectrics最新文献_第9页

Effect of Eu ₂ O ₃ Concentrations Doped Li-Na-K Borate Glasses on Luminescence Properties for Red Emission Material 铕掺杂Li-Na-K硼酸盐玻璃对红色发射材料发光性能的影响

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Integrated Ferroelectrics Pub Date : 2023-09-29 DOI: 10.1080/10584587.2023.2234578

N. Jarucha, Y. Ruangtaweep, P. Meejitpaisan, P. Nawarat, P. Kanthang, N. Wongdamnern, P. Limsuwan, H.J. Kim, J. Kaewkhao, T. Sareein

{"title":"Effect of Eu 2 O 3 Concentrations Doped Li-Na-K Borate Glasses on Luminescence Properties for Red Emission Material","authors":"N. Jarucha, Y. Ruangtaweep, P. Meejitpaisan, P. Nawarat, P. Kanthang, N. Wongdamnern, P. Limsuwan, H.J. Kim, J. Kaewkhao, T. Sareein","doi":"10.1080/10584587.2023.2234578","DOIUrl":"https://doi.org/10.1080/10584587.2023.2234578","url":null,"abstract":"AbstractThis paper investigated the europium-doped lithium sodium potassium borate glasses (LNKBEu). Glass was made using a melt-quenching technique with a range of europium doping concentrations ranging from 0.0 to 5.0 mol%. The absorption spectra showed that photons in the visible light and near infrared ranges were absorbed by the LNKBEu glasses. Photon absorption at 394 nm can excite the mirror to emit a number of photons in the VIS region, such as 590, 613, 652, and 701 nm. The results showed that 3.0 mol% was the optimal concentration of LNKBEu glass. Therefore, 3.0LNKBEu glass was studied using Judd-Ofelt (JO) analysis, which revealed an interesting possibility of its use. This glass is a high power red laser device.Keywords: Alkali borate glasseseuropiumrare earthphotoluminescence Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis project is funded by the National Research Council of Thailand (NRCT) (Contract No. N41A650404) and CERNTEK COMPANY LIMITED. The authors would like to thank graduate students and research associates at the Center of Excellence in Glass Technology and Materials Science, as well as the Division of Industrial Materials Faculty of Science and Technology Rajamangala University of Technology Phra Nakhon, for their continuous collaboration in research.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135198898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Piezoelectric PVDF-TrFE/PET Energy Harvesters for Structural Health Monitoring (SHM) Applications 用于结构健康监测(SHM)的压电PVDF-TrFE/PET能量采集器

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2239101

Berkay Kullukçu, Mohammad J. Bathaei, Muhammad Awais, Hadi Mirzajani, Levent Beker

引用次数: 1

Synthesis, Structure and Thermal Properties of the Cu₂NiSeTe Cu2NiSeTe的合成、结构和热性能

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227048

Kh. M. Guliyeva, N. N. Mursakulov, N. A. Aliyeva, Y. I. Aliyev

引用次数: 0

Ruderman–Kittel–Kasuya–Yosida–like Ferromagnetism in Nonmetal Doped Y ₂ O ₃ 非金属掺杂y2o3的类ruderman - kittel - kasuya - yosida铁磁性

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227047

J. Li, M. Luo, Y. H. Shen

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Structural and Optical Properties of PEDOT: PSS PEDOT: PSS的结构和光学性质

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227056

Babak Emdadi, Ahmed Asimov

{"title":"Structural and Optical Properties of PEDOT: PSS","authors":"Babak Emdadi, Ahmed Asimov","doi":"10.1080/10584587.2023.2227056","DOIUrl":"https://doi.org/10.1080/10584587.2023.2227056","url":null,"abstract":"AbstractIn recent years, films fabricated from poly (3, 4-ethylenedioxythiophene): poly (4-styrenesulfonate) (PEDOT: PSS) aqueous dispersions have attracted lot of attention due to their exceptional advantages of high transparency in the visible range, excellent thermal stability and aqueous solution processibility. The effect of annealing on the structural, and optical properties of films obtained by the spin coating method on glass substrates has been investigated. This work investigated the impact of second annealing on the structural, and optical properties of poly (3, 4-ethylene dioxythiophene): poly (styrene sulfonate) (PEDOT: PSS) thin films. Thin films PEDOT: PSS of about 150 nm thicknesses were deposited by sol-gel method spin coating technique at room temperature. The obtained films were annealed twice: by annealing at 110 °C temperature for 15 min, and at 170 °C within one hour. The films were characterized by X-ray diffraction (XRD), spectroscopic ellipsometry (SE), photoluminescence spectroscopy, and atomic force microscopy (AFM) methods. Studies have shown that second annealing has reduced defects, efficiently.Keywords: PEDOTconducting polymersX-ray diffraction analysisellipsometry investigationAFM image Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Research on Cloud Platform Software Aging Prediction Method Based on VMD-ARIMA-BilSTM Combined Model 基于VMD-ARIMA-BilSTM组合模型的云平台软件老化预测方法研究

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2192665

Fengdong Shi, Zhi Yuan, Min Wang, Jun Cui

{"title":"Research on Cloud Platform Software Aging Prediction Method Based on VMD-ARIMA-BilSTM Combined Model","authors":"Fengdong Shi, Zhi Yuan, Min Wang, Jun Cui","doi":"10.1080/10584587.2023.2192665","DOIUrl":"https://doi.org/10.1080/10584587.2023.2192665","url":null,"abstract":"AbstractWhen the cloud platform runs under heavy load for a long time, internal resources will be consumed and errors will accumulate continuously. As a result, the software aging phenomenon occurs, which ultimately degrades the performance and reliability of the software system. Aiming at the above problems, this paper proposes a hybrid model based on integrated variational mode decomposition, moving average free regression and long and short memory network (VMD-ARIMA-BILSTM) to predict the software aging problem. Firstly, the original resource utilization rate is decomposed into stationary time series and non-stationary time series by variational mode decomposition. Then, the advantages of moving average free regression and bidirectional long short-term memory network are used to predict stationary and non-stationary series respectively. Finally, the prediction results are reconstructed to obtain the final prediction results. Experimental results show that compared with single ARIMA and BI-LSTM, the hybrid model designed in this paper has higher prediction accuracy and faster convergence speed.Keywords: Cloud platformsoftware agingVMDARIMABILSTM Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Modification of Structural and Dielectric Properties of SmFeO ₃ Orthoferrites System by Ce Doping Ce掺杂改性smfeo3正铁氧体体系的结构和介电性能

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2239098

Uma Gaikwad, Smita Acharya, Shraddha Shirbhate, Chitra Khade

{"title":"Modification of Structural and Dielectric Properties of SmFeO 3 Orthoferrites System by Ce Doping","authors":"Uma Gaikwad, Smita Acharya, Shraddha Shirbhate, Chitra Khade","doi":"10.1080/10584587.2023.2239098","DOIUrl":"https://doi.org/10.1080/10584587.2023.2239098","url":null,"abstract":"AbstractRare-earth orthoferrites RFeO3 are important functional materials and are very promising due to their unique electrical properties. Amongst various orthoferrites systems, SmFeO3 is emerging as potential system having various multifunctional behaviour with structural modifications by doping or microstructural effect. In the present attempt, we explore SmFeO3 system and modify it by partially replacing Sm by Ce. We have synthesised pure SmFeO3 based system through Sol-Gel one of the combustion method. X-ray diffraction study confirms the formation of pure and highly crystalline single phase without any impurity. To get more clarity about structural features, Rietveld Refinement has been carried out using by Full-Proof Software which confirms the formation of orthorhombic structure with Pbnm space group. Dielectric study confirms that Ce doping in SmFeO3 modify dielectric constant from one order to two order. The response of polarisation with respect to applied electric field has been studied by P-E loop tracer. The remanent polarisation (pr) enhanced from 0.040 to 0.050 µC/cm2 for x = 0.10 after applied maximum electric field. An improvement in the ferroelectric loop was obtained due to the suppression of oxygen vacancies and the reduced leakage current density (10 − 8 A/cm2 at 20 kV/cm).Keywords: Orthoferritessol gelperovskitedielectric properties AcknowledgmentAMRL laboratory, Dept. of Physics, RTMNU, Nagpur, India is acknowledged for providing the Ferroelectric (P-E loop) as well as Dielectric characterization facility.Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Impact of Ferroelectric Material BaTiO₃ on Negative Capacitance TFET Device and Its Circuit Application 铁电材料BaTiO3对负电容TFET器件的影响及其电路应用

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2227054

Amandeep Singh, Sanjeet Kumar Sinha, Sweta Chander

{"title":"Impact of Ferroelectric Material BaTiO3 on Negative Capacitance TFET Device and Its Circuit Application","authors":"Amandeep Singh, Sanjeet Kumar Sinha, Sweta Chander","doi":"10.1080/10584587.2023.2227054","DOIUrl":"https://doi.org/10.1080/10584587.2023.2227054","url":null,"abstract":"With the increase in scaling of transistors in nanometer regime, various short channel effects are emerging in transistor operation that are required to resolved while putting conventional transistor to any practical application. Various device modifications and structure improvizations have been made and reported by the researchers to overcome the short channel effects and replace the conventional MOSFET with an optimized device in practical circuit applications. The device structure proposed in this work incorporates the negative capacitance phenomenon for making subthreshold swing steeper and enhancing current ratio of TFET. Further the device dimensions are being optimized to get improvised characteristics and best results are obtained at 3 nm thick BaTiO3 Ferroelectric material for making negative capacitance gate stack. In this paper, negative capacitance TFET so formed is used for implementing inverter and 1 T DRAM cell. Results obtained shows that the inverter and DRAM cell operates at a very lower supply voltage and are more suitable for low power applications as compared to conventional circuits.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Extension of Surface Charge Density Studies of Metal Oxide Semiconductor (MOS) Structure to Polarization Studies of Metal Ferroelectric Metal (MFM) Structure in Bulk Form: Experimental and Simulation of Polarization Data 金属氧化物半导体(MOS)结构的表面电荷密度研究延伸到金属铁电金属(MFM)结构的本体极化研究:极化数据的实验与模拟

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2023.2239096

Syed Mahboob, None Rizwana

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Catalytic Conversion of Ni ₁₂ P ₅ in Situ on the Surface of Carbon Nanotubes to Promote Polysulfide Conversion in High-Performance Lithium-Sulfur Batteries 碳纳米管表面Ni 12p5原位催化转化促进高性能锂硫电池中多硫化物的转化

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Integrated Ferroelectrics Pub Date : 2023-09-02 DOI: 10.1080/10584587.2022.2143187

Shenghong Mao, Wenxiao Su, Chunyuan Liu, Fu Zhao, Hongxia Zhao, Xiaoping Zheng

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