Ce掺杂改性smfeo3正铁氧体体系的结构和介电性能

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Uma Gaikwad, Smita Acharya, Shraddha Shirbhate, Chitra Khade
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引用次数: 0

摘要

稀土正铁氧体RFeO3是一种重要的功能材料,由于其独特的电学性能,具有广阔的应用前景。在各种正铁氧体体系中,SmFeO3是一种具有多种多功能行为的潜在体系,可以通过掺杂或微结构效应进行结构修饰。在本次尝试中,我们探索了SmFeO3体系,并将其部分替换为Ce。采用溶胶-凝胶燃烧法合成了纯SmFeO3基体系。x射线衍射研究证实形成了纯净、高结晶的单相,无任何杂质。为了更清楚地了解结构特征,利用Full-Proof Software进行Rietveld细化,确认了具有Pbnm空间群的正交结构的形成。电介质研究证实,Ce掺杂使SmFeO3的介电常数由一个量级提高到两个量级。用P-E环示踪器研究了极化对外加电场的响应。施加最大电场后,当x = 0.10时,剩余极化(pr)从0.040µC/cm2增加到0.050µC/cm2。由于抑制了氧空位和降低了漏电流密度(20 kV/cm时10−8 A/cm2),铁电回路得到了改进。印度那格浦尔RTMNU物理系amrl实验室因提供铁电(P-E环路)和介电表征设备而受到认可。披露声明作者未报告潜在的利益冲突。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modification of Structural and Dielectric Properties of SmFeO 3 Orthoferrites System by Ce Doping
AbstractRare-earth orthoferrites RFeO3 are important functional materials and are very promising due to their unique electrical properties. Amongst various orthoferrites systems, SmFeO3 is emerging as potential system having various multifunctional behaviour with structural modifications by doping or microstructural effect. In the present attempt, we explore SmFeO3 system and modify it by partially replacing Sm by Ce. We have synthesised pure SmFeO3 based system through Sol-Gel one of the combustion method. X-ray diffraction study confirms the formation of pure and highly crystalline single phase without any impurity. To get more clarity about structural features, Rietveld Refinement has been carried out using by Full-Proof Software which confirms the formation of orthorhombic structure with Pbnm space group. Dielectric study confirms that Ce doping in SmFeO3 modify dielectric constant from one order to two order. The response of polarisation with respect to applied electric field has been studied by P-E loop tracer. The remanent polarisation (pr) enhanced from 0.040 to 0.050 µC/cm2 for x = 0.10 after applied maximum electric field. An improvement in the ferroelectric loop was obtained due to the suppression of oxygen vacancies and the reduced leakage current density (10 − 8 A/cm2 at 20 kV/cm).Keywords: Orthoferritessol gelperovskitedielectric properties AcknowledgmentAMRL laboratory, Dept. of Physics, RTMNU, Nagpur, India is acknowledged for providing the Ferroelectric (P-E loop) as well as Dielectric characterization facility.Disclosure StatementNo potential conflict of interest was reported by the author(s).
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来源期刊
Integrated Ferroelectrics
Integrated Ferroelectrics 工程技术-工程:电子与电气
CiteScore
1.40
自引率
0.00%
发文量
179
审稿时长
3 months
期刊介绍: Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
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