稀土金属钐掺杂铁氧体及其生物医学应用的结构、形态、磁性和光学研究

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-09-02 DOI:10.1080/10584587.2023.2227042

Avinash Tripathi, Abhishek Nigam, S. J. Pawar

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引用次数: 0

摘要

摘要x射线衍射分析表明，溶胶-凝胶法合成的Fe2O3、SmFeO3和v SmFeO3均为单相。Fe2O3、SmFeO3和v SmFeO3分别为六角形、正交形和立方形。采用Debye-Scherer公式计算了Fe2O3 (85.54 nm)、SmFeO3 (67.65 nm)和v SmFeO3 (49.58 nm)的平均晶粒尺寸。FESEM形貌为近球形，平均粒径分别为173、114和161 nm。VSM分析表明，与Fe2O3相比，SmFeO3和v SmFeO3的磁性行为增强。对大肠杆菌和金黄色葡萄球菌的抗菌活性证明了其生物医学应用的合理性。关键词:抗菌素铁氧体磁性纳米颗粒钐稀土材料披露声明作者未报告潜在利益冲突。作者感谢跨学科研究中心(CIR)、MNNIT Allahabad、Prayagraj和IIT Kanpur对材料的表征。这项工作得到了印度政府教育部的支持，并提供了一项技术硕士奖学金。

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Rare Earth Metal Samarium Doped Ferrite and Its Structural, Morphological, Magnetic, and Optical Studies for Biomedical Applications

AbstractThe x-ray diffraction analysis manifested the single phases of Fe2O3, SmFeO3, and v SmFeO3 synthesized via sol-gel route. The Fe2O3, SmFeO3, and v SmFeO3 were hexagonal, orthorhombic, and cubic, respectively. The Debye-Scherer formula was used to calculate the average crystallite size of Fe2O3 (85.54 nm), SmFeO3 (67.65 nm), and v SmFeO3 (49.58 nm). The FESEM reveals near-spherical morphology with average particle sizes of 173, 114, and 161 nm, respectively. VSM analysis revealed the enhanced magnetic behavior of SmFeO3 and v SmFeO3 compared to Fe2O3. Antimicrobial activity against both E. coli and S. aureus bacteria justifies the biomedical application.Keywords: Antimicrobialferritesmagnetic nanoparticlessamariumrare earth material Disclosure StatementNo potential conflict of interest was reported by the author(s).AcknowledgmentsThe authors are grateful to the Centre for Interdisciplinary Research (CIR), MNNIT Allahabad, Prayagraj, and IIT Kanpur, for the characterization of the materials.Additional informationFundingThis work was supported by the Ministry of Education, Govt. of India, by giving an M. Tech. Fellowship.

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.