Research on Cloud Platform Software Aging Prediction Method Based on VMD-ARIMA-BilSTM Combined Model

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Fengdong Shi, Zhi Yuan, Min Wang, Jun Cui
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引用次数: 0

Abstract

AbstractWhen the cloud platform runs under heavy load for a long time, internal resources will be consumed and errors will accumulate continuously. As a result, the software aging phenomenon occurs, which ultimately degrades the performance and reliability of the software system. Aiming at the above problems, this paper proposes a hybrid model based on integrated variational mode decomposition, moving average free regression and long and short memory network (VMD-ARIMA-BILSTM) to predict the software aging problem. Firstly, the original resource utilization rate is decomposed into stationary time series and non-stationary time series by variational mode decomposition. Then, the advantages of moving average free regression and bidirectional long short-term memory network are used to predict stationary and non-stationary series respectively. Finally, the prediction results are reconstructed to obtain the final prediction results. Experimental results show that compared with single ARIMA and BI-LSTM, the hybrid model designed in this paper has higher prediction accuracy and faster convergence speed.Keywords: Cloud platformsoftware agingVMDARIMABILSTM Disclosure StatementNo potential conflict of interest was reported by the author(s).
基于VMD-ARIMA-BilSTM组合模型的云平台软件老化预测方法研究
摘要当云平台长期在高负荷下运行时,会消耗内部资源,导致错误不断积累。因此,会出现软件老化现象,最终降低软件系统的性能和可靠性。针对上述问题,本文提出了一种基于变分模态分解、移动平均自由回归和长短时记忆网络的混合模型(VMD-ARIMA-BILSTM)来预测软件老化问题。首先,通过变分模态分解将原始资源利用率分解为平稳时间序列和非平稳时间序列;然后利用移动平均自由回归和双向长短期记忆网络的优势分别对平稳序列和非平稳序列进行预测。最后对预测结果进行重构,得到最终的预测结果。实验结果表明,与单一ARIMA和BI-LSTM相比,本文设计的混合模型具有更高的预测精度和更快的收敛速度。关键词:云平台软件老化vmdarimabilstm披露声明作者未报告潜在利益冲突。
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来源期刊
Integrated Ferroelectrics
Integrated Ferroelectrics 工程技术-工程:电子与电气
CiteScore
1.40
自引率
0.00%
发文量
179
审稿时长
3 months
期刊介绍: Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
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