ca0.5 Nd 0.5 mno3和ca0.5 Pr 0.5 mno3晶体的扫描电镜研究

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-09-02 DOI:10.1080/10584587.2023.2227041

Z. E. Hakhverdiyeva

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引用次数: 0

摘要

摘要合成了钙钛矿型锰矿Ca0.5Nd0.5MnO3和Ca0.5Pr0.5MnO3多晶，用扫描电镜对其表面结构和元素分析进行了研究。x射线相分析表明，这些化合物具有具有空间基团Pbnm的正交晶型结构。这些化合物在固相中以多晶形式合成。测定了Ca0.5Nd0.5MnO3化合物中Ca−12.25%，Mn−31.55%，Nd−35.58%，O−20.62%。在Ca0.5Pr0.5MnO3化合物中Ca−12.11%，Mn−30.62%，Pr−36.81%，O−20.46%。从微米尺度上获得的表面结构，可以确定晶体的尺寸在20-30微米之间。关键词:钙钛矿锰钛sem分析表面结构披露声明作者未报告潜在利益冲突。

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Scanning Electron Microscopy Study of Ca _0.5 Nd _0.5 MnO ₃ and Ca _0.5 Pr _0.5 MnO ₃ Crystals

AbstractPolycrystals of perovskite manganites Ca0.5Nd0.5MnO3 and Ca0.5Pr0.5MnO3 have been synthesized, their surface structure and elemental analysis have been studied using a Scanning Electron Microscope. X-ray phase analysis revealed that these compounds have an orthorhombic crystal structure with space group Pbnm. These compounds were synthesized as polycrystals in the solid phase. It was determined that Ca − 12.25%, Mn − 31.55%, Nd − 35.58%, O − 20.62% in the compound Ca0.5Nd0.5MnO3. In Ca0.5Pr0.5MnO3 compound Ca − 12.11%, Mn − 30.62%, Pr − 36.81%, O − 20.46%. From the surface structure obtained on a micron scale, it was determined that the size of the crystallites is in the range of 20-30 microns.Keywords: PerovskitemanganitSEM analysissurface structure Disclosure StatementNo potential conflict of interest was reported by the author(s).

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.