Extension of Surface Charge Density Studies of Metal Oxide Semiconductor (MOS) Structure to Polarization Studies of Metal Ferroelectric Metal (MFM) Structure in Bulk Form: Experimental and Simulation of Polarization Data

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Integrated Ferroelectrics Pub Date : 2023-09-02 DOI:10.1080/10584587.2023.2239096

Syed Mahboob, None Rizwana

引用次数: 0

Abstract

Ba(NdxTi(1-2x)Nbx)O3 and (Na0.5Bi0.5)(NdyTi1-2yNby)O3 relaxor ferroelectric materials were prepared through solid state sintering route. The polarization as a function of electric field (PE loops) were measured with Radiant technologies PE loop tracer. In the present studies we have extended the surface charge density studies of metal oxide semiconductor (MOS) structure to the polarization studies of metal ferroelectric and metal (MFM) structure in bulk form by combining it with the modified Glazounov and Arrhenius equations. The simulation is in good agreement the experimental data. In the case of Ba(NdxTi(1-2x)Nbx)O3 ceramics the value of dipole moment (p) are 2.24x10−26 C.m, 1.80x10−26 C.m, 2.23x10−26 C.m & 2.21x 10−26 C.m for x = 0.025, 0.05, 0.1 & 0.2, respectively. The values of surface potential (Ψp) are 466 meV, 503 meV, 552 meV & 505 meV for x = 0.025, 0.05, 0.1 & 0.2, respectively.

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金属氧化物半导体(MOS)结构的表面电荷密度研究延伸到金属铁电金属(MFM)结构的本体极化研究:极化数据的实验与模拟

采用固态烧结法制备了Ba(NdxTi(1-2x)Nbx)O3和(Na0.5Bi0.5)(NdyTi1-2yNby)O3弛豫铁电材料。利用辐射技术测量了极化随电场(PE环路)的变化规律。在本研究中，我们将金属氧化物半导体(MOS)结构的表面电荷密度研究与修正的Glazounov和Arrhenius方程相结合，将其扩展到体形金属铁电和金属(MFM)结构的极化研究。仿真结果与实验结果吻合较好。对于Ba(NdxTi(1-2x)Nbx)O3陶瓷，当x = 0.025、0.05、0.1和0.2时，偶极矩(p)分别为2.24 × 10−26 cm、1.80 × 10−26 cm、2.23 × 10−26 cm和2.21 × 10−26 cm。x = 0.025、0.05、0.1和0.2时，表面电位(Ψp)分别为466 meV、503 meV、552 meV和505 meV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.