IEEE Transactions on Microwave Theory and Techniques最新文献

Editorial—IEEE T-MTT Mini Special Issue Featuring WPTCE 2024 社论- ieee T-MTT迷你特刊特色WPTCE 2024

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-06-12 DOI: 10.1109/TMTT.2025.3572637

Ramesh Pokharel;Kenjiro Nishikawa;Hiroo Sekiya

引用次数: 0

Frequency-Tunable 40–44-GHz Butler Matrix 频率可调40-44-GHz巴特勒矩阵

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-04-22 DOI: 10.1109/TMTT.2025.3556648

Paige Danielson;Laila Marzall;Zoya Popović

引用次数: 0

Nonlinear Transmission Line GaN MMIC Frequency Comb Generator 非线性传输线GaN MMIC频率梳状发生器

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-04-07 DOI: 10.1109/TMTT.2025.3553435

Joel Johnson;Cody Scarborough;Zoya Popović

{"title":"Nonlinear Transmission Line GaN MMIC Frequency Comb Generator","authors":"Joel Johnson;Cody Scarborough;Zoya Popović","doi":"10.1109/TMTT.2025.3553435","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3553435","url":null,"abstract":"This article presents the design and characterization of a uniform nonlinear transmission line (NLTL) monolithic microwave integrated circuit (MMIC) implemented in a 150-nm GaN process on a 50-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick SiC substrate. The implementation in GaN allows for high power handling, and this article presents measured phase noise at fundamental and harmonics generated with a 1-W GaN NLTL. The NLTL unit cell is designed with two series lumped inductors and a diode-connected transistor in reverse bias. After varying the number of unit cells in nonlinear simulations, eight elements are chosen for the final implementation at a fundamental input frequency range from 2 to 3 GHz, with maximized conversion efficiency for harmonics below 8.5 GHz. For input powers between 20 and 30 dBm at 2 GHz, the generated frequency comb is measured and has a minimum conversion loss of 10.7, 17.3, and 24.9 dB and a maximum output power of 17.8, 11.6, and 4.1 dBm at 4, 6, and 8GHz, respectively. Similarly, at 3 GHz, conversion loss of 9.9 and 22.7 dB and output power of 16.0 and 4.3 dBm at 6 and 9 GHz are measured, respectively. In all cases, the input return loss is less than 10 dB. In the time domain, the NLTL produces pulses with widths of 80 and 67 ps when excited with 30 dBm input power at 2 and 3 GHz, respectively. The phase noise measured at the first three harmonics (<inline-formula> <tex-math>${N} =2$ </tex-math></inline-formula>, 3, 4) increases as 20 log<sub>10</sub>(<italic>N</i>) with very low additive phase noise, where <italic>N</i> is the frequency multiplication factor.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 6","pages":"3075-3084"},"PeriodicalIF":4.1,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144272783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Codesigned Planar-Packaged THz Transmitter With Integrated CMOS Chip and Folded Reflectarray 集成CMOS芯片和折叠反射阵的平面封装太赫兹发射机的协同设计

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-03-25 DOI: 10.1109/TMTT.2025.3550168

Jiawei Yang;Yizhu Shen;Shizhe Xu;Zhenghuan Wei;Sanming Hu

{"title":"Codesigned Planar-Packaged THz Transmitter With Integrated CMOS Chip and Folded Reflectarray","authors":"Jiawei Yang;Yizhu Shen;Shizhe Xu;Zhenghuan Wei;Sanming Hu","doi":"10.1109/TMTT.2025.3550168","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3550168","url":null,"abstract":"This article introduces a planar-packaged terahertz (THz) transmitter, codesigned with a highly integrated CMOS active chip and a folded reflectarray (FRA). This design addresses the essential demands for high-power and cost-effective packaging solutions in THz applications. The CMOS active chip incorporates a four-stage ring oscillator and a differential on-chip patch antenna, both integrated into a single chip. A four-stage ring oscillator with a gate-loaded varactor configuration is proposed to broaden the frequency tuning range. The integration of the four-stage ring oscillator functionally multiplexing an on-chip antenna enables direct harmonic radiation without an impedance matching network, facilitating a compact, symmetrical chip layout. Furthermore, the chip-integrated FRA codesigned with the CMOS feeding source significantly narrows the beamwidth and enhances the equivalent isotropic radiated power (EIRP) without introducing additional power consumption. The fabricated prototype exhibits an EIRP of 12.3 dBm at 335 GHz, representing a significant EIRP enhancement of up to 22 dB over a standalone CMOS feeding source while maintaining a minimal dc power consumption of 49.6 mW. Additionally, the THz transmitter exhibits a frequency tuning range from 315 to 337.5 GHz, offering a relative bandwidth of 7.1%, and a dc-to-EIRP efficiency of 34.2%. The proposed chip-integrated FRA, with its low cost, low profile, and planar active integration capability, provides a substantial advancement for THz applications.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 6","pages":"3133-3143"},"PeriodicalIF":4.1,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144272987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improving On-Wafer Characterization of Sub-THz Devices: A Probe Influence and Crosstalk Study 改进亚太赫兹器件的片上特性：探针影响和串扰研究

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-03-21 DOI: 10.1109/TMTT.2025.3550095

Jerome Cheron;Nicholas C. Miller;Antonio Crespo;Dylan F. Williams;Rob D. Jones;Michael Elliott;Jeffrey A. Jargon;Ryan Gilbert;Benjamin F. Jamroz;Jason Shell;Bryan T. Bosworth;Edward Gebara;Nicholas R. Jungwirth;Peter H. Aaen;Christian J. Long;Nathan D. Orloff;James C. Booth;Ari D. Feldman

{"title":"Improving On-Wafer Characterization of Sub-THz Devices: A Probe Influence and Crosstalk Study","authors":"Jerome Cheron;Nicholas C. Miller;Antonio Crespo;Dylan F. Williams;Rob D. Jones;Michael Elliott;Jeffrey A. Jargon;Ryan Gilbert;Benjamin F. Jamroz;Jason Shell;Bryan T. Bosworth;Edward Gebara;Nicholas R. Jungwirth;Peter H. Aaen;Christian J. Long;Nathan D. Orloff;James C. Booth;Ari D. Feldman","doi":"10.1109/TMTT.2025.3550095","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3550095","url":null,"abstract":"We evaluate the accuracy of small-signal on-wafer device characterization in the sub-THz frequency range when employing conventional and advanced calibration methods with state-of-the-art design of on-chip standards. We report that major discrepancies resulting from an interlaboratory comparison experiment are mainly attributed to the influence of microwave probes. When performing conventional multiline thru-reflect-line (mTRL) calibrations with six different models of probe from 140 to 325 GHz, we observe significant variations in the measured scattering-parameters (S-parameters) and show that probes made by various manufacturers induce disparate crosstalk responses that vary between −70 and −15 dB on open-open standards. After applying a crosstalk correction approach as a second-tier calibration, we obtain significantly better agreement between the RF performance of the same heterojunction bipolar transistor (HBT) measured with two different probe models. While the difference between the maximum stable gain (MSG) reaches 1.8 dB at 210 GHz after applying a conventional mTRL calibration, we reduce the error to ~0.5 dB after crosstalk correction. This study shows that crosstalk correction methods must be implemented in the sub-THz frequency range to accurately estimate the RF performance of active devices and circuits.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 6","pages":"3144-3155"},"PeriodicalIF":4.1,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144272986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Integrated 75–100 GHz In-Band Full-Duplex Quasi-Circulator-Based Front-End GaN MMIC 集成75-100 GHz带内全双工准环形前端GaN MMIC

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-03-18 DOI: 10.1109/TMTT.2025.3548014

Seth Johannes;Anthony Romano;Grant James;Ryan Gilbert;Nicholas C. Miller;Zoya Popović

引用次数: 0

Joint Communication and Sensing at D-Band SDR and at 5.8 GHz via Multibeam Arrays 基于多波束阵列的d波段SDR和5.8 GHz联合通信与传感

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-03-15 DOI: 10.1109/TMTT.2025.3566499

S. Sivasankar;U. Kumarasiri;K. Lawrance;K. Karunanayake;P. Sen;R. J. Cintra;A. Madanayake

{"title":"Joint Communication and Sensing at D-Band SDR and at 5.8 GHz via Multibeam Arrays","authors":"S. Sivasankar;U. Kumarasiri;K. Lawrance;K. Karunanayake;P. Sen;R. J. Cintra;A. Madanayake","doi":"10.1109/TMTT.2025.3566499","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3566499","url":null,"abstract":"Joint communication and sensing (JCAS) are gaining attention as essential solutions to address the requirements of modern applications while promoting the efficient utilization of spectrum resources. Further, GPS-denied location, navigation, command, and control for unmanned aerial systems (UAS) is important from the standpoint of modern military applications, where GPS is usually not available. In this article, we discuss JCAS using 5.8 GHz industrial, scientific, and medical (ISM) band data communications using a software-defined radio (SDR) approach, where range and direction information is recovered through real-time cross correlation methods across multiple simultaneous receive beams in a single shot. Further, a multifrequency active repeater technique is proposed, where the uplink is at the D-band, and the downlink occurs at 5.8 GHz ISM band, which allows secure and safe command and control of a UAS while allowing location and enhanced security using JCAS in a GPS denied environment. Preliminary experiments using SDR with D-band wireless transmissions for connectivity to a UAS (uplink) ensure that the ground station uses directional transmissions from ground-to-air, making it difficult to detect from ground-based sensors. Further, an active down-converting repeater at the UAS allows omni-directional downlink transmissions at the UAS, making the location of the ISM and array receiver (ground station) difficult to detect from ground-based sensors using direction finding methods. Experimental testbed allows 100 Mbps data rate (up/down) at 147 GHz and 5.8 GHz ISM band, multiple snapshot-based averaging for improved SNR, and 32-beam multibeam digital array receivers for directional and range information over 180° in a single shot. All implementations are real-time and operate on FPGA technology. Ground station uses approximate discrete Fourier transform (DFT)-based beamformers having linear arithmetic complexity for achieving realtime DSP at low arithmetic complexity.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 6","pages":"3236-3249"},"PeriodicalIF":4.1,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144272801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Large-Scale, Low-Power, Compact 5G mm-Wave Phased-Array Transceiver in 45 nm RFSOI CMOS 基于45nm RFSOI CMOS的大规模、低功耗、紧凑型5G毫米波相控阵收发器

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-03-13 DOI: 10.1109/TMTT.2025.3544620

Seungjae Baek;Jooseok Lee;Kihyun Kim;Seungwon Park;Hansik Oh;Taewan Kim;Joonho Jung;Jinhyun Kim;Sehyug Jeon;Jee Ho Park;Woojae Lee;Jaehong Park;Dong-Hyun Lee;Sangho Lee;Jeong Ho Lee;Ji Hoon Kim;Younghwan Kim;Sangyong Park;Bohee Suh;Soyoung Oh;Dongsoo Lee;Juho Son;Yifei Chen;Sung-Gi Yang

{"title":"A Large-Scale, Low-Power, Compact 5G mm-Wave Phased-Array Transceiver in 45 nm RFSOI CMOS","authors":"Seungjae Baek;Jooseok Lee;Kihyun Kim;Seungwon Park;Hansik Oh;Taewan Kim;Joonho Jung;Jinhyun Kim;Sehyug Jeon;Jee Ho Park;Woojae Lee;Jaehong Park;Dong-Hyun Lee;Sangho Lee;Jeong Ho Lee;Ji Hoon Kim;Younghwan Kim;Sangyong Park;Bohee Suh;Soyoung Oh;Dongsoo Lee;Juho Son;Yifei Chen;Sung-Gi Yang","doi":"10.1109/TMTT.2025.3544620","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3544620","url":null,"abstract":"This work describes a compact <inline-formula> <tex-math>$2times 16$ </tex-math></inline-formula>-channel phased-array transceiver IC designed for millimeter-wave (mm-Wave) applications over 24.25–29.5 GHz, fabricated using 45 nm radio frequency silicon-on-insulator (RFSOI) CMOS technology. The design achieves high RF performance and occupies a compact die area. It features a Doherty power amplifier (PA) that achieves a high linear output power (POUT) of 14.5 dBm at a third-order intermodulation distortion (IMD3) of -25 dBc, as well as a compact low-noise amplifier (LNA) with a wide-band noise figure (NF) below 2.75 dB over the operating frequency range. In transmitter (TX) mode, the transceiver IC delivers an average POUT greater than 11.0 dBm/Ch., with an error vector magnitude (EVM) of -25 dB, while consuming less than 155 mW/Ch. In receiver (RX) mode, it records an NF ranging from 3.2 to 3.7 dB, with power consumption below 48.8 mW/Ch. The entire size of the transceiver IC is 59.8 mm2, with each channel occupying a die area of 1.87 mm2.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"2097-2110"},"PeriodicalIF":4.1,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 360 GHz Wideband CMOS Autodyne FMCW Radar: Theory and Implementation 360 GHz宽带CMOS自达因FMCW雷达：理论与实现

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-03-04 DOI: 10.1109/TMTT.2025.3543335

Morteza Tavakoli Taba;S. M. Hossein Naghavi;Morteza Fayazi;Andreia Cathelin;Ehsan Afshari

{"title":"A 360 GHz Wideband CMOS Autodyne FMCW Radar: Theory and Implementation","authors":"Morteza Tavakoli Taba;S. M. Hossein Naghavi;Morteza Fayazi;Andreia Cathelin;Ehsan Afshari","doi":"10.1109/TMTT.2025.3543335","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3543335","url":null,"abstract":"A fully integrated wideband THz autodyne frequency-modulated continuous-wave (FMCW) radar is reported in this work. The core of the transmitter is a five-stage voltage-controlled ring oscillator (VCRO). Wideband operation is achieved through the radiation of the fifth harmonic (<inline-formula> <tex-math>$5{f}_{o}$ </tex-math></inline-formula>) of the proposed VCRO. Additionally, an on-chip folded slot antenna is designed for radiation and reception of voltage-controlled oscillator (VCO)’s signal while providing the optimum matching condition at <inline-formula> <tex-math>$5{f}_{o}$ </tex-math></inline-formula>. The radar is fabricated in a 55-nm BiCMOS process using only CMOS transistors with <inline-formula> <tex-math>${f}_{T}/{f}_{max }=255$ </tex-math></inline-formula>/290 GHz. The radar achieves a peak equivalent-isotropically radiated power (EIRP) of 6.2 dBm using a hyper-hemispherical silicon lens and a 57 GHz bandwidth with an in-band power variation of 5.8 dB. It consumes 152 mW of dc power and occupies an area of 0.16 mm2. The autodyne radar topology utilizes the oscillator transistors as the mixing element, generating an intermediate frequency (IF) signal that is extracted from the <inline-formula> <tex-math>$V_{mathrm { DD}}$ </tex-math></inline-formula> line. Simulation results of the autodyne operation and IF generation mechanism are provided, verifying the dual operation of VCO as a transmitter and receiver. At last, the radar is tested in a focal imaging setup to take images of human teeth and capture the cavities and root canals inside the teeth. To the best of our knowledge, this radar achieves the highest bandwidth and smallest area among the VCO-based CMOS radars in the 100–500 GHz range.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 6","pages":"3108-3120"},"PeriodicalIF":4.1,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144272737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Compact Dual-Mode Dual-Band CMOS Power Amplifier Covering 5G FR1 and FR2 一种覆盖5G FR1和FR2的紧凑型双模双频CMOS功率放大器

IF 4.1 1区工程技术

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-02-27 DOI: 10.1109/TMTT.2025.3543447

Jingye Zhang;Jiawen Chen;Taotao Xu;Pei Qin;Xiang Yi;Liang Wu;Haoshen Zhu;Wenquan Che;Quan Xue

{"title":"A Compact Dual-Mode Dual-Band CMOS Power Amplifier Covering 5G FR1 and FR2","authors":"Jingye Zhang;Jiawen Chen;Taotao Xu;Pei Qin;Xiang Yi;Liang Wu;Haoshen Zhu;Wenquan Che;Quan Xue","doi":"10.1109/TMTT.2025.3543447","DOIUrl":"https://doi.org/10.1109/TMTT.2025.3543447","url":null,"abstract":"This article presents a dual-mode, dual-band power amplifier (PA) capable of covering both the fifth-generation (5G) FR1 and FR2 bands for 5G user equipment driver applications. The common-mode (CM) path, often overlooked in a typical differential-mode (DM) CMOS PA, is analyzed and utilized as an alternative path to cover a second frequency band. A universal topology is proposed for the utilization of both DM and CM in PA and other RF circuits. By assigning the millimeter-wave (mm-Wave) and sub-7 GHz bands to DM and CM paths, respectively, this PA achieves coverage of both 3.5 and 27 GHz bands with only one amplifying stage and consequently a compact layout. On the DM path, the proposed PA achieves a <inline-formula> <tex-math>${P}_{1{text{dB}}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${mathrm {PAE}}_{1{text {dB}}}$ </tex-math></inline-formula> of 18.1 dBm and 32.4% at 24 GHz, while on the CM path, the corresponding performance is 15.3 dBm and 35.5% at 3.7 GHz. The proposed PA exhibits an adjacent channel leakage ratio (ACLR) of −25.9 dBc, an average power-added efficiency (PAE) of 17%, and an average output power of 12.4 dBm at −24.7 dB EVMRMS with a 64 QAM 200 MSym/s modulation signal at 26 GHz in DM. Similarly, with 256 QAM 50 MSym/s modulation at 3.6 GHz in CM, the PA demonstrates −35.6 dBc ACLR, 22.5% average PAE, and 10.7 dBm average power at −31.1 dB EVMRMS. Furthermore, measurements with two carriers at 24 and 3.7 GHz indicate that the PA has the potential for concurrent operation in both modes. The PA is fabricated in a 65 nm CMOS process with a core area of 0.32 mm2.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"1985-1999"},"PeriodicalIF":4.1,"publicationDate":"2025-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0