A Large-Scale, Low-Power, Compact 5G mm-Wave Phased-Array Transceiver in 45 nm RFSOI CMOS

IF 4.1 1区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Microwave Theory and Techniques Pub Date : 2025-03-13 DOI:10.1109/TMTT.2025.3544620

Seungjae Baek;Jooseok Lee;Kihyun Kim;Seungwon Park;Hansik Oh;Taewan Kim;Joonho Jung;Jinhyun Kim;Sehyug Jeon;Jee Ho Park;Woojae Lee;Jaehong Park;Dong-Hyun Lee;Sangho Lee;Jeong Ho Lee;Ji Hoon Kim;Younghwan Kim;Sangyong Park;Bohee Suh;Soyoung Oh;Dongsoo Lee;Juho Son;Yifei Chen;Sung-Gi Yang

{"title":"A Large-Scale, Low-Power, Compact 5G mm-Wave Phased-Array Transceiver in 45 nm RFSOI CMOS","authors":"Seungjae Baek;Jooseok Lee;Kihyun Kim;Seungwon Park;Hansik Oh;Taewan Kim;Joonho Jung;Jinhyun Kim;Sehyug Jeon;Jee Ho Park;Woojae Lee;Jaehong Park;Dong-Hyun Lee;Sangho Lee;Jeong Ho Lee;Ji Hoon Kim;Younghwan Kim;Sangyong Park;Bohee Suh;Soyoung Oh;Dongsoo Lee;Juho Son;Yifei Chen;Sung-Gi Yang","doi":"10.1109/TMTT.2025.3544620","DOIUrl":null,"url":null,"abstract":"This work describes a compact <inline-formula> <tex-math>$2\\times 16$ </tex-math></inline-formula>-channel phased-array transceiver IC designed for millimeter-wave (mm-Wave) applications over 24.25–29.5 GHz, fabricated using 45 nm radio frequency silicon-on-insulator (RFSOI) CMOS technology. The design achieves high RF performance and occupies a compact die area. It features a Doherty power amplifier (PA) that achieves a high linear output power (POUT) of 14.5 dBm at a third-order intermodulation distortion (IMD3) of -25 dBc, as well as a compact low-noise amplifier (LNA) with a wide-band noise figure (NF) below 2.75 dB over the operating frequency range. In transmitter (TX) mode, the transceiver IC delivers an average POUT greater than 11.0 dBm/Ch., with an error vector magnitude (EVM) of -25 dB, while consuming less than 155 mW/Ch. In receiver (RX) mode, it records an NF ranging from 3.2 to 3.7 dB, with power consumption below 48.8 mW/Ch. The entire size of the transceiver IC is 59.8 mm2, with each channel occupying a die area of 1.87 mm2.","PeriodicalId":13272,"journal":{"name":"IEEE Transactions on Microwave Theory and Techniques","volume":"73 4","pages":"2097-2110"},"PeriodicalIF":4.1000,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Microwave Theory and Techniques","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10925534/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This work describes a compact

$2\times 16$

-channel phased-array transceiver IC designed for millimeter-wave (mm-Wave) applications over 24.25–29.5 GHz, fabricated using 45 nm radio frequency silicon-on-insulator (RFSOI) CMOS technology. The design achieves high RF performance and occupies a compact die area. It features a Doherty power amplifier (PA) that achieves a high linear output power (POUT) of 14.5 dBm at a third-order intermodulation distortion (IMD3) of -25 dBc, as well as a compact low-noise amplifier (LNA) with a wide-band noise figure (NF) below 2.75 dB over the operating frequency range. In transmitter (TX) mode, the transceiver IC delivers an average POUT greater than 11.0 dBm/Ch., with an error vector magnitude (EVM) of -25 dB, while consuming less than 155 mW/Ch. In receiver (RX) mode, it records an NF ranging from 3.2 to 3.7 dB, with power consumption below 48.8 mW/Ch. The entire size of the transceiver IC is 59.8 mm2, with each channel occupying a die area of 1.87 mm2.

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来源期刊

IEEE Transactions on Microwave Theory and Techniques 工程技术-工程：电子与电气

CiteScore

8.60

自引率

18.60%

发文量

486

审稿时长

6 months

期刊介绍： The IEEE Transactions on Microwave Theory and Techniques focuses on that part of engineering and theory associated with microwave/millimeter-wave components, devices, circuits, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, and industrial, activities. Microwave theory and techniques relates to electromagnetic waves usually in the frequency region between a few MHz and a THz; other spectral regions and wave types are included within the scope of the Society whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.